Patents by Inventor Tsutomu Yamashita

Tsutomu Yamashita has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6573526
    Abstract: A single electron tunneling transistor which has a multi-layer structure exhibiting a single electron tunneling effect even with processing accuracy of not greater than 0.1 &mgr;m. The multi-layer structure of the single electron tunneling transistor is characterized by alternately growing an electrically conductive layer and a tunneling barrier layer. The number of layers is 50 or more. The structure has a minute tunneling junction having an area on the order of 1 &mgr;m square.
    Type: Grant
    Filed: April 19, 2002
    Date of Patent: June 3, 2003
    Assignee: Japan Science and Technology Corporation
    Inventors: Tsutomu Yamashita, Sang-Jae Kim
  • Patent number: 6500567
    Abstract: In this invention, an ultra thin layer of CoCr alloy nucleation layer is sputtered at an extremely low deposition rate above a predominantly (200) oriented Cr film followed by a CoCrPt based alloy sputtered film at higher rates and moderate temperatures. This structure creates a media which has very high Hc, and excellent PW50, low noise and excellent low TNLD values. By using this technique, the CoCrPt magnetic film achieves excellent in-plane crystallographic orientation, and high Hc is achieved with minimal amount of Pt addition to the magnetic film. The method allows very fine grain structure of cobalt to be formed which contributes to good signal to noise ratio. A fine grain structure combined with chromium segregation between the grains improve the signal to noise ratio even more. A high degree of in-plane c-axis orientation is achieved in the cobalt layer which provides very high hysteresis loop squareness which helps to improve the OW and TNLD.
    Type: Grant
    Filed: October 3, 2000
    Date of Patent: December 31, 2002
    Assignee: Komag, Inc.
    Inventors: Gerardo Bertero, Charles Changqing Chen, Tu Chen, Tsutomu Yamashita, Makoto Imakawa, Michinobu Suekane
  • Patent number: 6150015
    Abstract: In this invention, an ultra thin layer of CoCr alloy nucleation layer is sputtered at an extremely low deposition rate above a predominantly (200) oriented Cr film followed by a CoCrPt based alloy sputtered film at higher rates and moderate temperatures. This structure creates a media which has very high Hc, and excellent PW50, low noise and excellent low TNLD values. By using this technique, the CoCrPt magnetic film achieves excellent in-plane crystallographic orientation, and high Hc is achieved with minimal amount of Pt addition to the magnetic film. The method allows very fine grain structure of cobalt to be formed which contributes to good signal to noise ratio. A fine grain structure combined with chromium segregation between the grains improve the signal to noise ratio even more. A high degree of in-plane c-axis orientation is achieved in the cobalt layer which provides very high hysteresis loop squareness which helps to improve the OW and TNLD.
    Type: Grant
    Filed: December 4, 1997
    Date of Patent: November 21, 2000
    Assignee: Komag, Incorporated
    Inventors: Gerardo Bertero, Charles Changqing Chen, Tu Chen, Tsutomu Yamashita, Makoto Imakawa, Michinobu Suekane
  • Patent number: 6086730
    Abstract: Sputtering method for producing amorphous hydrogenated carbon thin films with high sp.sup.3 content. By sputtering the carbon with a pulsed DC power supply having high voltage peaks, a carbon film with remarkably high sp.sup.3 bonding fraction can be obtained. Previously, carbon films with a very high sp.sup.3 fraction film with content as high (e.g. as 80%) could only be produced by methods such as filtered cathodic arc deposition or chemical vapor deposition methods (CVD) such as plasma-enhanced chemical vapor deposition (PE-CVD) and ion-beam deposition operating at some narrowly defined range of deposition conditions. It is very advantageous to use sputtering to create a high sp.sup.3 content film, since sputtering is more manufacturable and has higher productivity compared to CVD or ion-beam deposition methods. The resultant carbon film has excellent durability and corrosion resistance capability down to very low thickness.
    Type: Grant
    Filed: April 22, 1999
    Date of Patent: July 11, 2000
    Assignee: Komag, Incorporated
    Inventors: Wen Hong Liu, Gang Peng, Tsutomu Yamashita, Tu Chen
  • Patent number: 5903399
    Abstract: UV-curable Fresnel lens resin compositions ?a! comprising a (meth)acrylate containing hydroxyl group and aromatic ring (A1), a urethane group-contining (meth) acrylate (A2) comprising an aromatic diol, an aromatic ringcontaining monofunctional (meth)acrylate (A3), and a photopolymerization initiator (B) and ?1b! comprising (A1), a mono- or di(meth)acrylate monomer (A4), and (B), further supplemented with a polyester (C1) comprising an aromatic diol and a phosphate (C2) for the formation of a Fresnel lens on a sheet or plate made of a methyl methacrylate (co) polymer; a Fresnel lens formed by UV cure of composition ?1a! or ?1b!; and a rear projection screen including a sheet or plate carrying said Fresnel lens. The Fresnel lens has high refractive index, antistatic properties and is satisfactory in adhesion-to a sheet or plate.
    Type: Grant
    Filed: February 4, 1998
    Date of Patent: May 11, 1999
    Assignees: Sanyo Chemical Industries, Ltd., Dainippon Printing Co., Ltd.
    Inventors: Tsutomu Yamashita, Michiharu Okubo, Makoto Honda, Futoshi Osawa
  • Patent number: 5805358
    Abstract: UV-curable Fresnel lens resin compositions ?1a! comprising a (meth)acrylate containing hydroxyl group and aromatic ring (A1), a urethane group-containing (meth)acrylate (A2) comprising an aromatic diol, an aromatic ring-containing monofunctional (meth)acrylate (A3), and a photopolymerization initiator (B) and ?1b! comprising (A1), a mono- or di(meth)acrylate monomer (A4), and (B), further supplemented with a polyester (C1) comprising an aromatic diol and a phosphate (C2) for the formation of a Fresnel lens on a sheet or plate made of a methyl methacrylate (co)polymer; a Fresnel lens formed by UV cure of composition ?1a! or ?1b!; and a rear projection screen including a sheet or plate carrying said Fresnel lens. The Fresnel lens has high refractive index, antistatic properties and is satisfactory in adhesion to a sheet or plate.
    Type: Grant
    Filed: July 29, 1996
    Date of Patent: September 8, 1998
    Assignees: Sanyo Chemical Industries, Ltd., Dainippon Printing Co., Ltd.
    Inventors: Tsutomu Yamashita, Michiharu Okubo, Makoto Honda, Futoshi Osawa
  • Patent number: 5482573
    Abstract: A magnetic material with an improved maximum energy product useful for high performance permanent magnet, bond magnet and other applications is disclosed. The magnetic material is expressed in a general formula R1.sub.x R2.sub.y M.sub.100-x-y where R1 is at least one element selected from the rare earth elements, R2 is at least one element selected from elements having an atomic radius in a range of 0.156 to 0.174 nm, M is at least one element selected from Fe and Co and x and y are atomic percent individually defined as x.gtoreq.2, y.gtoreq.0.01 and 4.ltoreq.x+y.ltoreq.20, and M occupying 90 atomic percent or more in the principal phase of the compound.
    Type: Grant
    Filed: October 16, 1992
    Date of Patent: January 9, 1996
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Shinya Sakurada, Takahiro Hirai, Akihiko Tsutai, Masashi Sahashi, Hideo Nagai, Tsutomu Yamashita
  • Patent number: 5032926
    Abstract: A video tape recorder is associated with a monitor to provide sub-picture images at portions of the monitor screen for use in editing a recorded tape by inserting an input video signal. First and second memories are provided with respective capacities sufficient to store a field or frame of a video signal reproduced from the tape or of an input video signal, and writing and reading of the memories are controlled to provide sub-picture signals for display at the respective portions of the monitor screen. When playback or playback-pause modes are selected, one of the sub-picture screen portions displays the reproduced video signal as a moving picture or as a still picture, respectively.
    Type: Grant
    Filed: April 18, 1989
    Date of Patent: July 16, 1991
    Assignee: Sony Corporation
    Inventors: Toshiaki Imai, Tsutomu Yamashita, Hiroshi Kuwabara
  • Patent number: 4985117
    Abstract: A method of manufacturing Josephson junctions includes steps of high Tc superconductor thin films on a substrates by chemical vapor deposition using raw materials, which includes at least yttrium, barium and copper, serving as vapor generating sources, and fabricating the high Tc superconductor thin films into micro-bridges to produce Josephson junctions.
    Type: Grant
    Filed: January 1, 1990
    Date of Patent: January 15, 1991
    Assignees: Kabushiki Kaisha Riken, Research Development Corporation of Japan
    Inventors: Hideyuki Kurosawa, Toshio Hirai, Hisanori Yamane, Tsutomu Yamashita
  • Patent number: 4830821
    Abstract: A contact forming material for a vacuum valve or vacuum circuit breaker comprising (a) a conductive material consisting of copper and/or silver, and (b) an arc-proof material consisting of chromium, titanium, zirconium, or an alloy thereof wherein the amount of said arc-proof material present in said conductive material matrix is no more than 0.35% by weight. This contact forming material is produced by a process which comprises the steps of compacting arc-proof material powder into a green compact, sintering said green compact to obtain a skeleton of the arc-proof material, infiltrating the voids of said skeleton with a conductive material, and cooling the infiltrated material. The contact forming material can provide contacts for a vacuum valve or vacuum circuit breaker which has excellent characteristics such as temperature rise characteristic and contact resistance characteristic.
    Type: Grant
    Filed: July 26, 1988
    Date of Patent: May 16, 1989
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Tsutomu Okutomi, Seishi Chiba, Mikio Okawa, Tadaaki Sekiguchi, Hiroshi Endo, Tsutomu Yamashita
  • Patent number: 4777335
    Abstract: A contact forming material for a vacuum valve or vacuum circuit breaker comprising (a) a conductive material consisting of copper and/or silver, and (b) an arc-proof material consisting of chromium, titanium, zirconium, or an alloy thereof wherein the amount of said arc-proof material present in said conductive material matrix is no more than 0.35% by weight. This contact forming material is produced by a process which comprises the steps of compacting arc-proof material powder into a green compact, sintering said green compact to obtain a skeleton of the arc-proof material, infiltrating the voids of said skeleton with a conductive material, and cooling the infiltrated material. The contact forming material can provide contacts for a vacuum valve or vacuum circuit breaker which has excellent characteristics such as temperature rise characteristic and contact resistance characteristic.
    Type: Grant
    Filed: January 20, 1987
    Date of Patent: October 11, 1988
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Tsutomu Okutomi, Seishi Chiba, Mikio Okawa, Tadaaki Sekiguchi, Hiroshi Endo, Tsutomu Yamashita
  • Patent number: 4762695
    Abstract: High-purity molybdenum or tungsten powder can be produced by a process comprising (a) decomposing a powder or an oxide powder of molybdenum or tungsten with hydrogen peroxide water; (b) bringing the resulting aqueous solution of molybdenum or tungsten into contact with a cation exchange resin; (c) concentrating the aqueous solution; and (d) reducing a concentrated solid material. By omitting reducing step (d), one can obtain high-purity molybdenum or tungsten oxide powders. Because the Mo and W powders and MoO.sub.3 and WO.sub.3 powders prepared by this invention are of an extremely high purity, they are useful as materials for targets of VLSI elements.
    Type: Grant
    Filed: September 4, 1987
    Date of Patent: August 9, 1988
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Hiroshi Endo, Shigeo Iiri, Masaru Hayashi, Tsutomu Yamashita, Satoshi Yamaguchi, Motoo Seimiya
  • Patent number: 4414487
    Abstract: A superconducting electron beam generator comprising a cavity resonator situated in a refrigerator and containing a superconductive metal member fixed on the cavity end plate, a tip of which member is disposed at the strongest point of a high frequency electric field formed in the cavity. A high quality and high energy coherent electron beam is emitted by the electric field from the tip of the metal member along an axis of the cavity and derived through a minute hole formed through the opposite end plate. This superconducting electron beam generator is particularly suitable for a high resolution electron microscope, a high quality X-ray generator, a crystallographic electron beam apparatus and the like.
    Type: Grant
    Filed: October 14, 1981
    Date of Patent: November 8, 1983
    Assignee: Technological University of Nagaoka
    Inventors: Tsutomu Yamashita, Jinichi Matsuda
  • Patent number: 4315215
    Abstract: A superconducting quantum interference fluxmeter, a super-high-sensitivity fluxmeter using a SQUID, suitable for use in precision electric instrumentation and superconducting electronics. The fluxmeter comprises a system to detect response output from the SQUID with high sensitivity by applying thereto such exciting AC as has a plurality of frequency components from an excitation AC source, and a system to detect with high sensitivity such alternating current as has higher or lower harmonic component of the exciting AC, which is generated by utilizing electromagnetic nonlinearity of the SQUID. Thus this invention markedly relieves difficulties in the manufacture and the use of the superconducting quantum interference devices, and enables selection of any desired operating temperature range, and compensation of quality changes with time.
    Type: Grant
    Filed: January 23, 1979
    Date of Patent: February 9, 1982
    Assignee: The President of Tokoku University
    Inventors: Yutaka Onodera, Tsutomu Yamashita