Patents by Inventor Tsuy-Hua Huang

Tsuy-Hua Huang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6157065
    Abstract: An electrostatic discharge protective circuit under an input pad. The electrostatic discharge protective circuit has at least a MOS, wherein the MOS comprises a drain region, a gate structure and a source region. A metal silicon layer is on the gate structure and the source region, wherein the gate structure and the source region are coupled to each other through the metal silicon layer. A dielectric layer is over the drain region, the gate structure and the source region. A metal layer is over the dielectric layer. A via plug is in the dielectric layer, wherein the drain and the conductive layer are coupled to each other through the via plug. An input pad is over the MOS, wherein the metal layer is coupled to an input port and an internal circuit through the input pad.
    Type: Grant
    Filed: January 14, 1999
    Date of Patent: December 5, 2000
    Assignee: United Microelectronics Corp.
    Inventors: Tsuy-Hua Huang, Hung-Ting Chen, Chia-Hsing Chao, Chun-Jing Horng
  • Patent number: 5897342
    Abstract: A multilayer wiring structure consists of a substrate with a first set of wiring lines formed thereon. A first insulating layer covers the first set of wiring lines, a second insulating layer covers the first set of wiring lines and then a second set of wiring lines are formed on the second insulating layer. Vias are formed through the second insulating layer, the second wiring lines and the first insulating layer extending down to the surface or near the surface of the first wiring lines. Metallizations fill the vias to form connections and interconnections to and between the first wiring lines, the second wiring lines and the surface of the semiconductor device. Additional wiring lines may be formed on the surface of the second insulating layer and in contact with the metallizations.
    Type: Grant
    Filed: November 19, 1996
    Date of Patent: April 27, 1999
    Assignee: United Microelectronics Corp.
    Inventors: Chun-Sheng Liu, Chen-Chung Hsu, Tsuy-Hua Huang