Abstract: The mass spectrometer includes a sample stage, an irradiation unit that irradiates the sample with an energy beam and ionizes a component of the sample, an extraction electrode that extracts the ionized sample from the surface of the sample by a potential difference from the sample stage, an MCP that emits electrons in accordance with the ionized sample, an imaging part that acquires an image based on the electrons emitted by the MCP, and a control unit that controls operations of the irradiation unit, the extraction electrode, and the imaging part. The control unit changes the potential of the extraction electrode at a timing in accordance with the detection target component after the irradiation of the energy beam by the irradiation unit, and causes the imaging part to acquire an image as an analysis target in a period in accordance with the detection target component.

Abstract: A mass spectrometry device includes a sample stage, an irradiator, a MCP, a fluorescent body, an imager, and a controller. The irradiator irradiates a sample with an energy beam to ionize a plurality of components of the sample while maintaining position information of the plurality of components. The MCP emits electrons in accordance with an ionized sample. The fluorescent body emits fluorescent light in accordance with the electrons. The imager has a shutter mechanism configured to be capable of switching an open state and a close state. The controller controls an opening and closing operation of the shutter mechanism. The controller allows the imager to image the fluorescent light corresponding to each of the plurality of components by performing the opening and closing of the shutter mechanism at a timing for each of the components.

Abstract: An imaging unit includes a MCP, a fluorescent body, and an imager. The MCP is provided on a flight route of an ionized sample that is a component of a sample ionized and emits electrons in accordance with the ionized sample. The fluorescent body is disposed in a subsequent stage of the MCP and emits fluorescent light in accordance with the electrons emitted from the MCP. The imager is disposed in a subsequent stage of the fluorescent body and has a shutter mechanism configured to be capable of switching an open state in which the fluorescent light is imaged by allowing the fluorescent light from the fluorescent body to pass through and a close state in which the fluorescent light is not imaged by blocking the fluorescent light from the fluorescent body. An afterglow time of the fluorescent body is 12 ns or shorter.

Abstract: A semiconductor laser element includes a semiconductor stack with a ridge, a first electrode layer, a current injection prevention layer, and a second electrode layer. The semiconductor stack has an emission surface and a reflection surface. The first electrode layer extends in the lengthwise direction and disposed on the ridge in contact with the semiconductor stack. The current injection prevention layer partially covers the first electrode layer, and has one or more island portions. Each of the island portions is disposed in a center region of the ridge in plan view. The second electrode layer is disposed on the current injection prevention layer, and partially in contact with the first electrode layer.

Abstract: A semiconductor laser element includes a semiconductor stack with a ridge, a first electrode layer, a current injection prevention layer, and a second electrode layer. The semiconductor stack has an emission surface and a reflection surface. The first electrode layer extends in the lengthwise direction and disposed on the ridge in contact with the semiconductor stack. The current injection prevention layer partially covers the first electrode layer, and has one or more island portions. Each of the island portions is disposed in a center region of the ridge in plan view. The second electrode layer is disposed on the current injection prevention layer, and partially in contact with the first electrode layer.

Abstract: A semiconductor laser element includes: a semiconductor stack with a ridge, the semiconductor stack having an emission surface and a reflection surface; a first electrode layer extending in the lengthwise direction and disposed on the ridge in contact with the semiconductor stack; a current injection prevention layer covering at least a part of an upper surface from side surfaces of the first electrode layer, and being in contact with the first electrode layer at 18 to 80% of a contact surface area between the first electrode layer and the semiconductor stack; and a second electrode layer disposed on the current injection prevention layer, and being in contact with a part of the first electrode layer, edges of the second electrode layer being disposed closer to the emission surface and the reflection surface than edges of the first electrode layer, respectively.

Abstract: A semiconductor laser element includes: a semiconductor stack with a ridge, the semiconductor stack having an emission surface and a reflection surface; a first electrode layer extending in the lengthwise direction and disposed on the ridge in contact with the semiconductor stack; a current injection prevention layer covering at least a part of an upper surface from side surfaces of the first electrode layer, and being in contact with the first electrode layer at 18 to 80% of a contact surface area between the first electrode layer and the semiconductor stack; and a second electrode layer disposed on the current injection prevention layer, and being in contact with a part of the first electrode layer, edges of the second electrode layer being disposed closer to the emission surface and the reflection surface than edges of the first electrode layer, respectively.

Abstract: The present invention is aimed to prevent occurrence of COD and rapid degradation of light output in semiconductor laser devices. The semiconductor laser device includes a semiconductor laser element 100A and a support member 200. The semiconductor laser element 100a includes a first electrode 13, a substrate 11, and a semiconductor structure 12 having an emitting facet and a reflecting facet, a second electrode 15, and a pad 16, in this order. The semiconductor laser element 100A is connected to a support member 200 at its pad 16 side via a connecting member 300. The emitting-side end portion of the second electrode 15 is spaced apart from the emitting facet of the semiconductor structure 12, and the emitting-side end portion of the pad 16 is located at an outer side than the emitting-side end portion the second electrode 15.

Abstract: The present invention is aimed to prevent occurrence of COD and rapid degradation of light output in semiconductor laser devices. The semiconductor laser device includes a semiconductor laser element 100A and a support member 200. The semiconductor laser element 100a includes a first electrode 13, a substrate 11, and a semiconductor structure 12 having an emitting facet and a reflecting facet, a second electrode 15, and a pad 16, in this order. The semiconductor laser element 100A is connected to a support member 200 at its pad 16 side via a connecting member 300. The emitting-side end portion of the second electrode 15 is spaced apart from the emitting facet of the semiconductor structure 12, and the emitting-side end portion of the pad 16 is located at an outer side than the emitting-side end portion the second electrode 15.

Abstract: A nitride semiconductor device having a substrate electrode establishing an excellent ohmic contact with a nitride semiconductor substrate is provided. The nitride semiconductor device includes a substrate having an electrode formed on at least one main surface. The substrate is a nitride semiconductor substrate whose surface includes two regions. The first region has an electrode formed thereon and a second region does not have any electrodes formed thereon. A first n-type impurity is included in a higher concentration in the first region than that in the second region in the vicinity of the surface of the substrate.

Abstract: A nitride semiconductor device having a substrate electrode establishing an excellent ohmic contact with a nitride semiconductor substrate is provided. The nitride semiconductor device includes a substrate having an electrode formed on at least one main surface. The substrate is a nitride semiconductor substrate whose surface includes two regions. The first region has an electrode formed thereon and a second region does not have any electrodes formed thereon. A first n-type impurity is included in a higher concentration in the first region than that in the second region in the vicinity of the surface of the substrate.

Abstract: A method and apparatus for tracking the use of a distributable software application uses two identification codes and a tracking assistant to monitor the operation and distribution of the software application. A first code is preferably a downloaded identification code created when the user accesses a web server. The first identification code and other registration data is stored in a database coupled to the web server. A second unique installation code is automatically created when the software application is installed in the user's computer. Subsequent installations of the application using the same first code results in a different installation code. The tracking assistant module automatically transmits both codes to a database via a network (Internet) according to a predetermined schedule. One embodiment of the tracking assistant also collects other data on the use of the application, such as frequency of use or features commonly used, and transmits it along with the two codes as tracking data.

Abstract: An electronic message forwarding system selectively forwards information to a plurality of different receiving device types. One or more user defined filters filter incoming messages, route the messages, and send the routed message to appropriate form converters to convert the message into a form appropriate to the receiving device type, such as e-mail, pager, facsimile, or telephone forwarding. In a preferred embodiment, a plurality of filters, router, and form converters may be used to perform a message classification, channel selection, and channel output control function.

Abstract: A software architecture for task oriented applications. The architecture utilizes a wrapper as an intermediate structure between an external calling application and a wrapped component or module. The wrapper is written in a script language and acts as a bridge between the external application and the wrapped component. Data is transferred among components through the intermediary of a table of contents (TOC) file which contains data attribute information and a link to the actual data file.