Patents by Inventor Tsuyoshi Inukai

Tsuyoshi Inukai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11629351
    Abstract: Plants are created with desired traits by conveniently and rapidly inhibiting methylation of target DNA in plants, without using recombination technology. Scaffold RNA produced by transcription of target DNA is cleaved in an RNA-directed DNA methylation mechanism.
    Type: Grant
    Filed: July 25, 2019
    Date of Patent: April 18, 2023
    Assignee: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
    Inventors: Chikara Masuta, Tsuyoshi Inukai, Wataru Matsunaga, Reika Isoda, Takeshi Matsumura, Go Atsumi
  • Publication number: 20230056748
    Abstract: According to the present invention, methylation of a target DNA in a plant is suppressed quickly and easily without using recombinant technology, and a plant having desired traits is thereby created. In an RNA-directed DNA methylation mechanism, binding between scaffold RNA produced by transcription of the target DNA and an siRNA-AGO4 complex is inhibited.
    Type: Application
    Filed: December 25, 2020
    Publication date: February 23, 2023
    Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
    Inventors: Go ATSUMI, Takeshi MATSUMURA, Chikara MASUTA, Tsuyoshi INUKAI, Wataru MATSUNAGA, Reika ISODA
  • Publication number: 20210292779
    Abstract: Plants are created with desired traits by conveniently and rapidly inhibiting methylation of target DNA in plants, without using recombination technology. Scaffold RNA produced by transcription of target DNA is cleaved in an RNA-directed DNA methylation mechanism.
    Type: Application
    Filed: July 25, 2019
    Publication date: September 23, 2021
    Inventors: Chikara MASUTA, Tsuyoshi INUKAI, Wataru MATSUNAGA, Reika ISODA, Takeshi MATSUMURA, Go ATSUMI
  • Patent number: 5955832
    Abstract: A vacuum envelope with a built-in electron source capable of preventing peeling of gate electrodes, to thereby enhance reliability in operation over a long period of time and reducing a manufacturing cost thereof. The gate electrodes each are made of niobium oxide or niobium nitride. Nb for the gate electrode is previously oxidized or nitrided to prevent progress of oxidation of the gate electrode due to release of oxygen from lead oxide contained in a seal material during heating for sealing, resulting in expansion of the gate electrode. An insulating layer is formed on a cathode substrate and the gate electrodes are formed on the insulating layer. Then, the seal material is applied onto the insulating layer so as to cover a part of each of the gate electrodes, so that the cathode substrate may be sealedly joined to an anode substrate.
    Type: Grant
    Filed: November 13, 1997
    Date of Patent: September 21, 1999
    Assignee: Futaba Denshi Kogyo K.K.
    Inventors: Masaharu Tomita, Shigeo Itoh, Hisataka Ochiai, Tsuyoshi Inukai