Abstract: An electronic apparatus includes an input unit and a controller. The input unit is configured to detect a user operation and output a signal corresponding to the user operation. The controller is configured to cause a data icon to be displayed on a screen of a display unit, judge a drag operation with respect to the data icon based on the signal from the input unit, and cause an icon to be displayed on the screen according to the drag operation, the icon indicating a state of an access authority of data related to the data icon.

Abstract: There is provided a communication device including a determination unit for determining whether authentication information presented to a user of another communication device is consistent with comparison information transmitted from the other communication device capable of obtaining and transmitting the authentication information, and an authentication unit, when it is determined that the authentication information is consistent with the comparison information, for authenticating the other communication device as an opposite communication party.

Abstract: A SiC semiconductor device includes: a SiC substrate including a first or second conductive type layer and a first conductive type drift layer and including a principal surface having an offset direction; a trench disposed on the drift layer and having a longitudinal direction; and a gate electrode disposed in the trench via a gate insulation film. A sidewall of the trench provides a channel formation surface. The vertical semiconductor device flows current along with the channel formation surface of the trench according to a gate voltage applied to the gate electrode. The offset direction of the SiC substrate is perpendicular to the longitudinal direction of the trench.

Abstract: To solve an uneven light quantity caused in a case where a light guide plate, in which light from a spot light source such as an LED enters an surface, changes by 90 degrees and exits the light to the outside, is used as a backlight. The light guide plate of the invention includes a light flux unifying region. The light flux unifying region has an incident surface, a first surface, and an exit surface. Light fluxes emitted from a light source enter the incident surface. The first surface is almost perpendicular to the incident surface and the intensity distribution of the light fluxes having entered is unified at the first surface. The exit surface is disposed almost parallel with the incident surface and the unified light fluxes exit from the exit surface. A boundary line between the incident surface and the first surface has a zigzag surface.

Abstract: A silicon carbide semiconductor device includes a silicon carbide semiconductor substrate and a trench. The silicon carbide semiconductor substrate has an offset angle with respect to a (0001) plane or a (000-1) plane and has an offset direction in a <11-20> direction. The trench is provided from a surface of the silicon carbide semiconductor substrate. The trench extends in a direction whose interior angle with respect to the offset direction is 30 degrees or ?30 degrees.

Abstract: An SiC semiconductor device includes a substrate, a drift layer, a base region, a source region, a trench, a gate oxide film, a gate electrode, a source electrode and a drain electrode. The substrate has a Si-face as a main surface. The source region has the Si-face. The trench is provided from a surface of the source region to a portion deeper than the base region and extends longitudinally in one direction and has a Si-face bottom. The trench has an inverse tapered shape, which has a smaller width at an entrance portion than at a bottom, at least at a portion that is in contact with the base region.

Abstract: A manufacturing method of an SiC single crystal includes preparing an SiC substrate, implanting ions into a surface portion of the SiC substrate to form an ion implantation layer, activating the ions implanted into the surface portion of the SiC substrate by annealing, chemically etching the surface portion of the SiC substrate to form an etch pit that is caused by a threading screw dislocation included in the SiC substrate and performing an epitaxial growth of SiC to form an SiC growth layer on a surface of the SiC substrate including an inner wall of the etch pit in such a manner that portions of the SiC growth layer grown on the inner wall of the etch pit join with each other.

Abstract: Disclosed is a media-agitation type pulverizer, which is enabled to acquire products of high quality by excellent pulverizing/dispersing actions. The media-agitation type pulverizer comprises a grinding container having a material entrance and a spherical grinding chamber, an agitating member disposed rotatably in the grinding chamber and near the inner wall of the grinding container, grinding media contained in the grinding chamber, and a centrifugal-type media-separating member rotatably disposed in the grinding chamber and in opposed relation to the agitating member.

Abstract: An apparatus and method provide logic for processing information. In one implementation, an apparatus includes a display unit configured to display a first stereoscopic image. The first stereoscopic image includes a first and a second content, which may be disposed at corresponding display positions in a depth direction, and at least a portion of the first content appears to overlap at least a portion of the second content. A position-changing unit is configured to modify the display positions of the first and second content, in response to the apparent overlap. A control unit is configured to generate a signal to display, a second stereoscopic image that includes the first and second content disposed at the modified display positions. The display unit is further configured to display the second stereoscopic image such that the second stereoscopic image reduces the apparent overlap between the first and second content.

Abstract: A SiC semiconductor device includes: a substrate, a drift layer, and a base region stacked in this order; first and second source regions and a contact layer in the base region; a trench penetrating the source and base regions; a gate electrode in the trench; an interlayer insulation film with a contact hole covering the gate electrode; a source electrode coupling with the source region and the contact layer via the contact hole; a drain electrode on the substrate; and a metal silicide film. The high concentration second source region is shallower than the low concentration first source region, and has a part covered with the interlayer insulation film, which includes a low concentration first portion near a surface and a high concentration second portion deeper than the first portion. The metal silicide film on the second part has a thickness larger than the first portion.

Abstract: A method of manufacturing a semiconductor device includes forming a drift layer on a substrate; forming a base layer on the drift layer; forming a trench to penetrate the base layer and to reach the drift layer; rounding off a part of a shoulder corner and a part of a bottom corner of the trench; covering an inner wall of the trench with an organic film; implanting an impurity to a surface portion of the base layer; forming a source region by activating the implanted impurity; and removing the organic film after the source region is formed, in which the substrate, the drift layer, the base layer and the source region are made of silicon carbide, and the implanting and the activating of the impurity are performed under a condition that the trench is covered with the organic film.

Abstract: An apparatus and method provide logic for formatting electronic content. In one implementation, an apparatus includes a generation unit configured to generate a signal for displaying content to a user on a display screen, and a receiving unit configured to receive information associated with a selection by the user of the displayed content. An identification unit is configured to identify a content element corresponding to the displayed content selection, based on at least the received information, and a formatting unit configured to format the identified content element by applying a formatting structure to the identified content element. The generation unit generates a signal for displaying the formatted content element on the display screen.

Abstract: A semiconductor device includes a semiconductor substrate and an electric field terminal part. The semiconductor substrate includes a substrate, a drift layer disposed on a surface of the substrate, and a base layer disposed on a surface of the drift layer. The semiconductor substrate is divided into a cell region in which a semiconductor element is disposed and a peripheral region that surrounds the cell region. The base region has a bottom face located on a same plane throughout the cell region and the peripheral region and provides an electric field relaxing layer located in the peripheral region. The electric field terminal part surrounds the cell region and a portion of the electric field relaxing layer and penetrates the electric field relaxing layer from a surface of the electric field relaxing layer to the drift layer.

Abstract: The silicon carbide semiconductor device includes a substrate, a drift layer, a base region, a source region, a trench, a gate insulating layer, a gate electrode, a source electrode, a drain electrode, and a deep layer. The deep layer is disposed under the base region and is located to a depth deeper than the trench. The deep layer is divided into a plurality of portions in a direction that crosses a longitudinal direction of the trench. The portions include a group of portions disposed at positions corresponding to the trench and arranged at equal intervals in the longitudinal direction of the trench. The group of portions surrounds corners of a bottom of the trench.

Abstract: A terminal apparatus includes a communication unit, a storage unit, and a controller. The communication unit is capable of communicating with a web server and receives information of a web page from the web server. The controller displays the web page in a window displayed on a display unit, generates an image of the web page before a change each time the web page is changed to a different web page, associates the generated image with a change history of the web page to store the generated image in the storage unit, and reads the image corresponding to the change history from the storage unit based on an instruction made by a user to display the image, to display the image on the display unit.

Abstract: In a method of manufacturing a silicon carbide substrate, a defect-containing substrate made of silicon carbide is prepared. The defect-containing substrate has a front surface, a rear surface being opposite to the front surface, and a surface portion adjacent to the front surface. The detect-containing substrate includes a screw dislocation in the surface portion. The front surface of the defect-containing substrate is applied with an external force so that a crystallinity of the surface portion is reduced. After being applied with the external force, the defect-containing substrate is thermally treated so that the crystallinity of the surface portion is recovered.

Abstract: A SiC semiconductor device having a Schottky barrier diode includes: a substrate made of SiC and having a first conductive type, wherein the substrate includes a main surface and a rear surface; a drift layer made of SiC and having the first conductive type, wherein the drift layer is disposed on the main surface of the substrate and has an impurity concentration lower than the substrate; a Schottky electrode disposed on the drift layer and has a Schottky contact with a surface of the drift layer; and an ohmic electrode disposed on the rear surface of the substrate. The Schottky electrode directly contacts the drift layer in such a manner that a lattice of the Schottky electrode is matched with a lattice of the drift layer.

Abstract: Disclosed is a media mixing mill, which is capable of obtaining a high-quality product while ensuring adequate pulverization/dispersion functions. The media mixing mill of the present invention includes a grinding container having a material inlet and a spherical-shaped grinding chamber, an agitating member rotatably installed inside the grinding chamber and in adjacent relation to an inner wall of the grinding container, grinding media contained in the grinding chamber, and a centrifugal-type media-separating member rotatably disposed inside the grinding chamber and in opposed relation to the agitating member.

Abstract: Disclosed is a media-agitation type pulverizer, which is enabled to acquire products of high quality by excellent pulverizing/dispersing actions. The media-agitation type pulverizer comprises a grinding container having a material entrance and a spherical grinding chamber, an agitating member disposed rotatably in the grinding chamber and near the inner wall of the grinding container, grinding media contained in the grinding chamber, and a centrifugal-type media-separating member rotatably disposed in the grinding chamber and in opposed relation to the agitating member.

Abstract: There is provided a very thin light guide plate for a surface light source device and a method of manufacturing it without the use of high-precision molding machine. A surface light source device using this light guide plate generates outgoing light having high uniformity. According to the manufacturing method, a light guide plate free from a weld line or warp can be manufactured with good transferring characteristics. The light guide plate is thick on an incident surface 1 side and thin on a lower surface 4 side. At the central portion of an incident surface 1 in a longitudinal direction, a projecting portion obtained by cutting an overhang portion 7 at a position a distance D apart from the incident surface 1 is formed. The cut surface of the projecting portion is not made specular and is kept rough. In molding of the light guide plate, a molten material is supplied from the position of a gate mark 9.