Abstract: A sheet for thermal bonding which has a tensile modulus of 10 to 3,000 MPa and contains fine metal particles in an amount in the range of 60-98 wt % and which, when heated from 23° C. to 400° C. in the air at a heating rate of 10° C./min and then examined by energy dispersive X-ray spectrometry, has a carbon concentration of 15 wt % or less.

Abstract: A sealing sheet with separators on both surfaces is provided with a sealing sheet, a separator (A) stacked on one surface of the sealing sheet and having a thickness of 50 ?m or more, and a separator (B) stacked on the other surface of the sealing sheet.

Abstract: A sheet for thermal bonding which has a tensile modulus of 10 to 3,000 MPa and contains fine metal particles in an amount in the range of 60-98 wt % and which, when heated from 23° C. to 400° C. in the air at a heating rate of 10° C./min and then examined by energy dispersive X-ray spectrometry, has a carbon concentration of 15 wt % or less.

Abstract: The present invention provides a thermally curable resin sheet for sealing a semiconductor chip having excellent reliability and storability while being reduced in warpage deformation due to the volume shrinkage of the thermally curable resin sheet, and a method for manufacturing a semiconductor package. The present invention relates to a thermally curable resin sheet for sealing a semiconductor chip, wherein an activation energy (Ea) satisfies the following formula (1), a glass transition temperature of a product thermally cured at 150° C. for 1 hour is 125° C. or higher, and a thermal expansion coefficient ? [ppm/K] of the thermally cured product at the glass transition temperature or lower and a storage modulus E? [GPa] at 25° C. of the thermally cured product satisfy the following formula (2): 30?Ea?120 [kJ/mol]??(1); and 10,000??×E??300,000 [Pa/K]??(2).

Abstract: Provided is a method for producing a semiconductor package. By this method, a periphery of a light-exposure planning region can be prevented from being exposed to light. The method is a semiconductor package producing method in which a film-formation planning surface of a cured product has a surface roughness of a predetermined value or less.

Abstract: A sealing sheet with a double-sided separator, provided with a sealing sheet, a separator (A) laminated on one side of the sealing sheet, and a separator (B) laminated on the other side of the sealing sheet, the separation force F1 between the sealing sheet and the separator (A), the separation force F2 between the sealing sheet and the separator (B), the thickness t of the sealing sheet, and the area A of the sealing sheet satisfying a specific relationship.

Abstract: The electronic component device production method includes a step A of preparing a layered body comprising electronic components immobilized on a support body, a step B of preparing an electronic component sealing sheet, a step C of disposing the electronic component sealing sheet over the electronic components under conditions where the probe tack force of the electronic component sealing sheet is 5 gf or lower according to a probe tack test, a step D of rising the temperature of the electronic component sealing sheet until the probe tack of the electronic component sealing sheet is 10 gf or greater according to the probe tack test to immobilize temporarily the electronic component sealing sheet onto the electronic components, and a step E of embedding the electronic components in the electronic component sealing sheet to form a sealed body comprising the electronic components embedded in the electronic component sealing sheet.

Abstract: Provided is a production method for a semiconductor package making it possible to embed, in its irregularities, a thermosetting resin sheet satisfactorily. The method is a production method, for a semiconductor package, including the step of forming a sealed body by pressurizing a stacked body which includes: a chip-temporarily-fixed body comprising a supporting plate, a temporarily-fixing material stacked over the supporting plate, and a semiconductor chip fixed temporarily over the temporarily-fixing material; a thermosetting resin sheet arranged over the chip-temporarily-fixed body; and a separator having a tensile storage elastic modulus of 200 MPa or less at 90° C. and arranged over the thermosetting resin sheet; the sealed body including the semiconductor chip and the thermosetting resin sheet covering the semiconductor chip.

Abstract: Provided is a production method for a semiconductor package which can yield a sealed resin body excellent in surface smoothness, and which makes it possible to omit any step of grinding a resin region of the sealed resin body. This method is a production method, for a semiconductor package, including the step of pressurizing a stacked body which includes: a chip-temporarily-fixed body comprising a supporting plate, a temporarily-fixing material stacked over the supporting plate, and a semiconductor chip fixed temporarily over the temporarily-fixing material; a thermosetting resin sheet arranged over the chip-temporarily-fixed body; and a separator having a tensile storage elastic modulus of 200 MPa or more at 90° C. and arranged over the thermosetting resin sheet. In this way, a sealed body is formed which includes the semiconductor chip and the thermosetting resin sheet covering the semiconductor chip.

Abstract: A sealing sheet with separators on both surfaces is provided with a sealing sheet, a separator (A) stacked on one surface of the sealing sheet and having a thickness of 50 ?m or more, and a separator (B) stacked on the other surface of the sealing sheet.

Abstract: The present invention provides a thermally curable resin sheet for sealing a semiconductor chip having excellent reliability and storability while being reduced in warpage deformation due to the volume shrinkage of the thermally curable resin sheet, and a method for manufacturing a semiconductor package. The present invention relates to a thermally curable resin sheet for sealing a semiconductor chip, wherein an activation energy (Ea) satisfies the following formula (1), a glass transition temperature of a product thermally cured at 150° C. for 1 hour is 125° C. or higher, and a thermal expansion coefficient ? [ppm/K] of the thermally cured product at the glass transition temperature or lower and a storage modulus E? [GPa] at 25° C. of the thermally cured product satisfy the following formula (2): 30?Ea?120 [kJ/mol]??(1); and 10,000??×E??300,000 [Pa/K]??(2).

Abstract: The present invention relates to an epoxy resin composition for semiconductor encapsulation, which includes the following components (A) to (E): (A) a bifunctional epoxy resin, (B) a curing agent, (C) an imidazole compound represented by the formula (1), in which R1 and R2 each independently represent an alkyl group or an alkylol group, in which at least one of R1 and R2 represents an alkylol group, and R3 represents an alkyl group or an aryl group, (D) a linear saturated carboxylic acid having a number average molecular weight of 550 to 800, and (E) an inorganic filler.

Abstract: A method for producing an epoxy resin composition for semiconductor encapsulation, which does not cause void generation and the like and is excellent in reliability. A method for producing an epoxy resin composition for semiconductor encapsulation, which contains the following components (A) to (C): (A) an epoxy resin, (B) a phenol resin, and (C) a hardening accelerator, which comprises mixing the whole or a part of the components excluding the component (A) among the components containing the components (A) to (C) in advance under a reduced pressure of from 1.333 to 66.65 kPa and under a heating condition of from 100 to 230° C., and then mixing the component (A) and remaining components with the resulting mixture.

Abstract: A method for producing an epoxy resin composition for semiconductor encapsulation, which does not cause void generation and the like and is excellent in reliability. A method for producing an epoxy resin composition for semiconductor encapsulation, which contains the following components (A) to (C): (A) an epoxy resin, (B) a phenol resin, and (C) a hardening accelerator, which comprises mixing the whole or a part of the components excluding the component (A) among the components containing the components (A) to (C) in advance under a reduced pressure of from 1.333 to 66.65 kPa and under a heating condition of from 100 to 230° C., and then mixing the component (A) and remaining components with the resulting mixture.