Abstract: A surface-emitting type semiconductor laser includes: an upper mirror and a lower mirror each composed of alternately formed first semiconductor layers and second semiconductor layers; an active layer disposed between the upper mirror and the lower mirror, wherein the surface-emitting laser emits laser light in a direction in which the first semiconductor layers and the second semiconductor layers are formed; a thick film layer formed with one of the first semiconductor layers composing the lower mirror, the thick film layer being thicker than other of the first semiconductor layers; and a third semiconductor layer provided between the thick film layer and one of the second semiconductor layers on the thick film layer, the third semiconductor layer having a refractive index between a refractive index of the first conductive layer and a refractive index of the second semiconductor layer.

Abstract: The invention provides a bump structure whose mounting position, shape, and size are favorably controlled and to a method of manufacturing the same. The bump structure of the invention can be provided on an insulating layer and includes a protruding part made of resin obtained by hardening a liquid material and a conductive layer that covers the protruding part. The protruding part can be obtained by forming a liquid-repelling part with a liquid-repelling characteristic for the liquid material and a liquid-attracting part that is more wettable than the liquid-repelling part for the liquid material on an upper surface on the insulating layer, discharging the liquid material onto the liquid-attracting part, and then hardening the liquid material.

Abstract: A surface-emitting type semiconductor laser includes a first mirror, an active layer formed above the first mirror, a second mirror formed above the active layer, a first electrode formed above the second mirror, and a second electrode formed above the first electrode, wherein each of the first electrode and the second electrode has an opening section, and the opening section of the first electrode is formed inside the opening section of the second electrode in a plan view.

Abstract: An optical element includes a substrate, a columnar section that is formed above the substrate and has an upper surface for light emission or light incidence, a first protection layer formed above the substrate in a region including at least a circumference of the columnar section, a resin layer formed above the first protection layer, a second protection layer formed above the resin layer, and an electrode that is electrically connected to the upper surface of the columnar section, wherein the first and second protection layers are composed of a material harder than the resin layer.

Abstract: To provide a surface light emitting element capable of maintaining characteristics of the surface light emitting element and accurately detecting emitted light. A surface light emitting element includes a light emitting element part, provided on a semiconductor substrate and emitting light perpendicular to the semiconductor substrate; a light detecting part, provided on the light emitting element part; a first electrode and a second electrode, which drives the light detecting part. The light detecting part includes a second contact layer; a light absorption layer, provided on the second contact layer; and a first contact layer provided on the light absorption layer. The first contact layer includes a first light passage part; and at least one electrode coupling part, extending from the first light passage part. The first electrode is provided on the first electrode coupling part of the first contact layer.

Abstract: A method of fabricating a surface-emission type light-emitting device which emits light in a direction perpendicular to a semiconductor substrate, includes the following steps (a) to (e). (a) A step of forming a column-shaped section by etching at least a part of a multilayer film. (b) A step of forming a first resin layer so as to cover the column-shaped section. (c) A step of forming a second resin layer by changing the solubility of the first resin layer in a liquid. (d) A step of immersing, for a specific period of time, at least the column-shaped section and the second resin layer in a liquid in which the second resin layer dissolves, thereby removing the second resin layer at least in the area formed over the column-shaped section. (e) A step of forming an insulating layer by curing the second resin layer.

Abstract: To improve the reliability of an optical element and its manufacturing method. An optical element 100 includes a substrate 110, a columnar section 130 formed above the substrate 110 and having an upper surface 132 for light emission or incidence, a resin layer 140 formed above the substrate 110 and in a region including a circumference of the columnar section 130, a reinforcing layer 180 that is formed above the resin layer 140 and is composed of a material harder than the resin layer 140, and an electrode 150 that has a bonding section 156 formed above the reinforcing layer 180 and is electrically connected to an end section of an exposed area in the upper surface 132 of the columnar section 130.

Abstract: To provide an optical element including a surface-emitting type semiconductor laser and an photodetector element, having a desired plurality of dielectric layers, and its manufacturing method.

Abstract: To provide a light-receiving element capable of high-speed operation including an optical member whose setting position, shape and size are advantageously controlled and its manufacturing method, and an optical module and an optical transmitting device including the light-receiving element, a light-receiving element includes a columnar part provided in a substrate. A top surface of the columnar part includes a receiving surface, and an optical member is provided on the top surface of the columnar part. The columnar part includes a first conductive type layer, a light absorbing layer, and a second conductive type layer. The light absorbing layer is formed between the first conductive type layer and the second conductive type layer.

Abstract: An electrode forming method with an excellent yield, includes: (a) forming an adhesion preventing member having a predetermined pattern on a base member: (b) forming a conductive layer on the base member and the adhesion preventing member; and (c) forming an electrode having a predetermined pattern by removing the conductive layer on the adhesion preventing member in a state in which the adhesion preventing member is disposed on the base member. Adhesion between the adhesion preventing member and the conductive layer is smaller than adhesion between the base member and the conductive layer.

Abstract: The invention provides a bump structure whose mounting position, shape, and size are favorably controlled and to a method of manufacturing the same. The bump structure of the invention can be provided on an insulating layer and includes a protruding part made of resin obtained by hardening a liquid material and a conductive layer that covers the protruding part. The protruding part can be obtained by forming a liquid-repelling part with a liquid-repelling characteristic for the liquid material and a liquid-attracting part that is more wettable than the liquid-repelling part for the liquid material on an upper surface on the insulating layer, discharging the liquid material onto the liquid-attracting part, and then hardening the liquid material.

Abstract: To provide a connection structure between an optical element and an optical fiber, which makes it possible to inexpensively secure optical transmission between the optical element and the optical fiber. A connection structure between an optical element and an optical fiber of includes an electro optical element, an optical fiber, and a connecting part. The electro optical element includes an optical surface and a base member provided on the optical surface. The connecting part is coupled to an end surface of the optical fiber and a top surface of the base member.

Abstract: An electro-optical element is provided including a light-emitting element part and a light-receiving element part, wherein an optical thickness d of the light-receiving element part satisfies the following condition: d=m?/2 where ? is a design wavelength of the light-emitting element part, and m is a natural number greater than or equal to one.

Abstract: To provide a surface-emitting type semiconductor laser that has good luminescence property and can be driven at high speeds, and its manufacturing method. In a surface-emitting type semiconductor laser having a first mirror, an active layer and a second mirror formed above a substrate, the surface-emitting type semiconductor laser in accordance with the present invention includes a columnar section including at least a portion of the second mirror, a first electrode formed above the first mirror or below the substrate, a second electrode formed above the second mirror, a dielectric layer formed around at least a portion of the columnar section and in contact with the columnar section, and a heat radiating section formed around at least a portion of the columnar section through the dielectric layer, wherein the heat radiating section is in an electrically floating state.

Abstract: To provide an optical element including a surface-emitting type semiconductor laser and an photodetector element, which can be processed with a high accuracy, and its manufacturing method. An optical element in accordance with the present invention includes a surface-emitting type semiconductor laser including, above a substrate, a first mirror, an active layer and a second mirror disposed from the side of the substrate, and a photodetector element, provided above the surface-emitting type semiconductor laser, including a first contact layer, a photoabsorption layer and a second contact layer disposed from the side of the surface-emitting type semiconductor laser, wherein an isolation layer is provided between the second mirror and the first contact layer.

Abstract: An optical semiconductor element includes: a surface-emitting type semiconductor laser that emits laser light; a photodetecting element formed above the surface-emitting type semiconductor; a first electrode of a first polarity formed on the surface-emitting type semiconductor laser; a second electrode of a second polarity different from the first polarity formed on the photodetecting element; and an additional electrode that covers the first electrode and the second electrode.

Abstract: A surface-emitting type semiconductor laser includes an upper mirror, a lower mirror, and an active layer disposed between the upper mirror and the lower mirror, and emits laser light in a direction of lamination of the lower mirror, the active layer and the upper layer, wherein at least one of the upper mirror and the lower mirror is in contact with the active layer, and includes a first region formed with a first semiconductor layer having a first refractive index, a second semiconductor layer having a second refractive index, and a third semiconductor layer provided between the first semiconductor layer and the second semiconductor layer and having a refractive index between the first refractive index and the second refractive index, and a second region formed with the first semiconductor layer and the second semiconductor layer alternately laminated.

Abstract: An electro-optical element is provided including a light-emitting element part and a light-receiving element part. An electro-optical element includes a light-emitting element part and a light-receiving element part having an optical surface and formed on the light-receiving element part. The electro-optical element emits light at least in a direction that the light-emitting element part and the light-receiving element part are formed in layers. In addition, an optical member is formed at least on the optical surface.

Abstract: Exemplary embodiments of the present invention include surface-emitting type semiconductor lasers including photodetector sections, which have a degree of freedom in designing its structure and are capable of high-speed driving. A surface-emitting type semiconductor laser in accordance with exemplary embodiments the present invention includes a light emitting element section, and a photodetector section that is provided above the light emitting element section and includes an emission surface. The light emitting element section includes a first mirror, an active layer provided above the first mirror, and a second mirror provided above the active layer. The second mirror is formed from a first region and a second region. The second region contacts the photodetector section, and the second region has a resistance greater than a resistance of the first region.

Abstract: To provide a connection structure between optical fibers and a connection method to couple optical fibers that make it possible to secure optical transmission, a connection structure between optical fibers includes a plurality of optical fibers, a base member provided over a substrate, and a connecting part provided on a top surface of the base member and joined to each of end surfaces of the plurality of optical fibers.