Abstract: A temperature measurement device includes a heat transfer member including a temperature measuring portion having a flat shape and extending laterally and a heat transfer portion that extends continuously from the temperature measuring portion and transfers heat of the temperature measuring portion, a clamping member that generates a clamping force with the temperature measuring portion, a temperature sensor that is fixed while being in contact with the heat transfer portion, and a resin member that covers and holds the heat transfer portion and the temperature sensor.

Abstract: A storage stores money. An outlet can receive money delivered from the storage therein. The outlet is configured to allow the money to be removed from the inside of the outlet. A detector detects a removal action associated with removal of money from the outlet. The controller switches a process on money remaining in the outlet based on a detection result of the detector.

Abstract: A temperature measurement device includes a heat transfer member including a temperature measuring portion having a flat shape and extending laterally and a heat transfer portion that extends continuously from the temperature measuring portion and transfers heat of the temperature measuring portion, a clamping member that generates a clamping force with the temperature measuring portion, a temperature sensor that is fixed while being in contact with the heat transfer portion, and a resin member that covers and holds the heat transfer portion and the temperature sensor.

Abstract: A magnetic bearing controller for controlling a magnetic levitation motor, the magnetic levitation motor including: a rotor; a pair of electromagnets that causes the rotor to levitate by electromagnetic force; an auxiliary bearing that supports a rotating shaft of the rotor when the rotor is stopped; and a rotor position detector that detects the rotor's position in a levitation direction. The magnetic bearing controller includes an operation current generator that generates an operation current value corresponding to a deviation between a position command value and the rotor's position detected by the rotor position detector. The operation current generator is configured to give a predetermined initial value greater than 0 to the operation current value at a start of levitation for causing the rotor in a state where the rotating shaft of the rotor is supported by the auxiliary bearing to levitate and be positioned at a predetermined target position.

Abstract: A battery cooling system includes a cooling water circulation circuit for circulating cooling water for cooling the battery, a first heat exchanger for exchanging heat between air and cooling water, a second heat exchanger for exchanging heat between the low-pressure refrigerant of the refrigeration cycle circuit and cooling water, and an ion exchanger for removing impurity ions contained in the cooling water. The first heat exchanger and the second heat exchanger are arranged in series in the cooling water circulation circuit. The ion exchanger is disposed on the downstream side of the second heat exchanger in the cooling water circulation circuit.

Abstract: A flexible connector comprises a first plurality of pads disposed within an integrated circuit (IC) area, a second plurality of pads disposed in the IC area, and a plurality of through holes disposed in the IC area. The flexible connector further comprises first wiring coupled to the plurality of through holes and the first plurality of pads, and a rigidity element at least partially disposed between the plurality of through holes and the second plurality of pads.

Abstract: A magnetic bearing controller for controlling a magnetic levitation motor, the magnetic levitation motor including: a rotor; a pair of electromagnets that causes the rotor to levitate by electromagnetic force; an auxiliary bearing that supports a rotating shaft of the rotor when the rotor is stopped; and a rotor position detector that detects the rotor's position in a levitation direction. The magnetic bearing controller includes an operation current generator that generates an operation current value corresponding to a deviation between a position command value and the rotor's position detected by the rotor position detector. The operation current generator is configured to give a predetermined initial value greater than 0 to the operation current value at a start of levitation for causing the rotor in a state where the rotating shaft of the rotor is supported by the auxiliary bearing to levitate and be positioned at a predetermined target position.

Abstract: A semiconductor device comprises a semiconductor substrate, a connection pad, and a bump. The connection pad is connected to the bump and disposed between the semiconductor substrate and the bump. The connection pad has one or more slits.

Abstract: The battery cooling system cools a battery mounted on the vehicle. The battery cooling system includes a cooling water circulation circuit for circulating cooling water for cooling the battery, a first heat exchanger for exchanging heat between air and cooling water, a second heat exchanger for exchanging heat between the low-pressure refrigerant of the refrigeration cycle circuit and cooling water, and an ion exchanger for removing impurity ions contained in the cooling water. The first heat exchanger and the second heat exchanger are arranged in series with the cooling water circulation circuit. The ion exchanger is disposed on the downstream side of the second heat exchanger in the cooling water circulation circuit.

Abstract: A flexible connector comprises a first plurality of pads disposed within an integrated circuit (IC) area, a second plurality of pads disposed in the IC area, and a plurality of through holes disposed in the IC area. The flexible connector further comprises first wiring coupled to the plurality of through holes and the first plurality of pads, and a rigidity element at least partially disposed between the plurality of through holes and the second plurality of pads.

Abstract: A method for stably operating a lean fuel intake gas turbine engine by controlling the rotation speed of the lean fuel intake gas turbine engine for which it is difficult to control the rotation speed by controlling a fuel flow rate, is provided. In a method for operating a lean fuel intake gas turbine engine (GT) configured to use, as a fuel, a combustible component contained in a low-concentration methane gas to drive a power generator, a power converter (17) is provided between an external electric power system (19) and the power generator (11), and a rotation speed of the power generator (11) is controlled by the power converter (17), to control a rotation speed of the gas turbine engine (GT).

Abstract: A method for manufacturing a magnetic memory chip device comprises the steps of: writing information in each of a plurality of magnetic memory chips formed on a silicon wafer; adhering a high magnetic permeability plate on a back face of the silicon wafer after writing information, the high magnetic permeability plate having a higher magnetic permeability than silicon and having a thickness of 50 um or more; dicing the silicon wafer into respective magnetic memory chips after adhering the high magnetic permeability plate.

Abstract: A method for manufacturing a magnetic memory chip device comprises the steps of: writing information in each of a plurality of magnetic memory chips formed on a silicon wafer; adhering a high magnetic permeability plate on a back face of the silicon wafer after writing information, the high magnetic permeability plate having a higher magnetic permeability than silicon and having a thickness of 50 um or more; dicing the silicon wafer into respective magnetic memory chips after adhering the high magnetic permeability plate.

Abstract: A method for manufacturing a magnetic memory chip device comprises the steps of: writing information in each of a plurality of magnetic memory chips formed on a silicon wafer; adhering a high magnetic permeability plate on a back face of the silicon wafer after writing information, the high magnetic permeability plate having a higher magnetic permeability than silicon and having a thickness of 50 ?m or more; dicing the silicon wafer into respective magnetic memory chips after adhering the high magnetic permeability plate.

Abstract: A manufacturing method of a semiconductor device includes a first electrode formation step of forming a control gate electrode above a surface of a semiconductor substrate with a control gate insulating film interposed between the control gate electrode and the semiconductor substrate, a step of forming a storage node insulating film on the surface of the semiconductor substrate, and a second electrode formation step of forming a memory gate electrode on a surface of the storage node insulating film. The second electrode formation step includes a step of forming a memory gate electrode layer on the surface of the storage node insulating film, a step of forming an auxiliary film, having an etching rate slower than that of the memory gate electrode layer, on a surface of the memory gate electrode layer, and a step of performing anisotropic etching on the memory gate electrode layer and the auxiliary film.

Abstract: A manufacturing method of a semiconductor device includes a first electrode formation step of forming a control gate electrode above a surface of a semiconductor substrate with a control gate insulating film interposed between the control gate electrode and the semiconductor substrate, a step of forming a storage node insulating film on the surface of the semiconductor substrate, and a second electrode formation step of forming a memory gate electrode on a surface of the storage node insulating film. The second electrode formation step includes a step of forming a memory gate electrode layer on the surface of the storage node insulating film, a step of forming an auxiliary film, having an etching rate slower than that of the memory gate electrode layer, on a surface of the memory gate electrode layer, and a step of performing anisotropic etching on the memory gate electrode layer and the auxiliary film.

Abstract: In a phase-change memory, an interface layer is inserted between a chalcogenide material layer and a plug. The interface layer is arranged so as not to cover the entire interface of a plug-like electrode. When the plug is formed at an upper part than the chalcogenide layer, the degree of integration is increased. The interface layer is formed by carrying out sputtering using an oxide target, or, by forming a metal film by carrying out sputtering using a metal target followed by oxidizing the metal film in an oxidation atmosphere such as oxygen radical, oxygen plasma, etc.

Abstract: A manufacturing method of a semiconductor device includes a first electrode formation step of forming a control gate electrode above a surface of a semiconductor substrate with a control gate insulating film interposed between the control gate electrode and the semiconductor substrate, a step of forming a storage node insulating film on the surface of the semiconductor substrate, and a second electrode formation step of forming a memory gate electrode on a surface of the storage node insulating film. The second electrode formation step includes a step of forming a memory gate electrode layer on the surface of the storage node insulating film, a step of forming an auxiliary film, having an etching rate slower than that of the memory gate electrode layer, on a surface of the memory gate electrode layer, and a step of performing anisotropic etching on the memory gate electrode layer and the auxiliary film.

Abstract: A manufacturing method of a semiconductor device includes a first electrode formation step of forming a control gate electrode above a surface of a semiconductor substrate with a control gate insulating film interposed between the control gate electrode and the semiconductor substrate, a step of forming a storage node insulating film on the surface of the semiconductor substrate, and a second electrode formation step of forming a memory gate electrode on a surface of the storage node insulating film. The second electrode formation step includes a step of forming a memory gate electrode layer on the surface of the storage node insulating film, a step of forming an auxiliary film, having an etching rate slower than that of the memory gate electrode layer, on a surface of the memory gate electrode layer, and a step of performing anisotropic etching on the memory gate electrode layer and the auxiliary film.

Abstract: A manufacturing method of a semiconductor device includes a first electrode formation step of forming a control gate electrode above a surface of a semiconductor substrate with a control gate insulating film interposed between the control gate electrode and the semiconductor substrate, a step of forming a storage node insulating film on the surface of the semiconductor substrate, and a second electrode formation step of forming a memory gate electrode on a surface of the storage node insulating film. The second electrode formation step includes a step of forming a memory gate electrode layer on the surface of the storage node insulating film, a step of forming an auxiliary film, having an etching rate slower than that of the memory gate electrode layer, on a surface of the memory gate electrode layer, and a step of performing anisotropic etching on the memory gate electrode layer and the auxiliary film.