Abstract: An electric power converter includes a semiconductor module and a DC bus bar. The semiconductor module includes a main body portion having a built-in semiconductor element therein and a DC terminal to which a DC voltage is applied projecting from the main body portion. A DC bus bar is connected to the DC terminal. The DC bus bar is disposed such that a thickness direction of the DC bus bar matches a projecting direction of the DC terminal. The penetrating portion penetrating the projecting direction is formed in the DC bus bar. The DC terminal is connected to the DC bus bar in a state where at least a part of the DC terminal is disposed in a position that can be seen from the penetrating portion when viewed from the projection direction. The penetrating portion is formed in a hole shape.

Abstract: An electric power converter includes a semiconductor module and a DC bus bar. The semiconductor module includes a main body portion having a built-in semiconductor element therein and a DC terminal to which a DC voltage is applied projecting from the main body portion. A DC bus bar is connected to the DC terminal. The DC bus bar is disposed such that a thickness direction of the DC bus bar matches a projecting direction of the DC terminal. The penetrating portion penetrating the projecting direction is formed in the DC bus bar. The DC terminal is connected to the DC bus bar in a state where at least a part of the DC terminal is disposed in a position that can be seen from the penetrating portion when viewed from the projection direction. The penetrating portion is formed in a hole shape.

Abstract: A semiconductor module has metallic radiator plates provided at central regions of principal surfaces of a sealing resin so as to expose from these principal surfaces. The metallic radiator plates and the principal surfaces of the sealing resin are bonded via grease gaps to heat receiving members. The grease gaps are widened in outer regions far from the metallic radiator plates compared with inner regions adjacent to the metallic radiator plates, to prevent external air from entering into the grease gaps even when the semiconductor module causes repetitive thermal expansions and contractions.

Abstract: A semiconductor module has metallic radiator plates provided at central regions of principal surfaces of a sealing resin so as to expose from these principal surfaces. The metallic radiator plates and the principal surfaces of the sealing resin are bonded via grease gaps to heat receiving members. The grease gaps are widened in outer regions far from the metallic radiator plates compared with inner regions adjacent to the metallic radiator plates, to prevent external air from entering into the grease gaps even when the semiconductor module causes repetitive thermal expansions and contractions.