Patents by Inventor Tsuyoshi Maesoba

Tsuyoshi Maesoba has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9184559
    Abstract: The present invention is intended to provide an electron-beam-pumped light source capable of irradiating one surface of a semiconductor light-emitting device uniformly with an electron beam, and capable of obtaining a high light output without increasing an accelerating voltage of the electron beam and, in addition, capable of efficiently cooling the semiconductor light-emitting device. An electron-beam-pumped light source of the present invention includes: an electron beam source and a semiconductor light-emitting device excited by an electron beam emitted from the electron beam source, and characterized in that the electron beam source includes a planar electron beam emitting portion and arranged in the periphery of the semiconductor light-emitting device, and light exits from a surface through which the electron beam from the electron beam source of the semiconductor light-emitting device enters.
    Type: Grant
    Filed: October 11, 2011
    Date of Patent: November 10, 2015
    Assignee: Ushio Denki Kabushiki Kaisha
    Inventors: Masanori Yamaguchi, Ken Kataoka, Tsuyoshi Maesoba, Hiroyuki Takada, Hiroshige Hata
  • Publication number: 20130322484
    Abstract: The present invention is intended to provide an electron-beam-pumped light source capable of irradiating one surface of a semiconductor light-emitting device uniformly with an electron beam, and capable of obtaining a high light output without increasing an accelerating voltage of the electron beam and, in addition, capable of efficiently cooling the semiconductor light-emitting device. An electron-beam-pumped light source of the present invention includes: an electron beam source and a semiconductor light-emitting device excited by an electron beam emitted from the electron beam source, and characterized in that the electron beam source includes a planar electron beam emitting portion and arranged in the periphery of the semiconductor light-emitting device, and light exits from a surface through which the electron beam from the electron beam source of the semiconductor light-emitting device enters.
    Type: Application
    Filed: October 11, 2011
    Publication date: December 5, 2013
    Applicant: USHIO DENKI KABUSHIKI KAISHA
    Inventors: Masanori Yamaguchi, Ken Kataoka, Tsuyoshi Maesoba, Hiroyuki Takada, Hiroshige Hata
  • Patent number: 6917157
    Abstract: Disclosed is an electrode for an electron source, a method for producing the same, and an electronic tube using the same which provide a decreased thickness of an electron emitting source, and an improved current distribution percentage. The electronic tube comprises a substrate, an electron emitting source area formed on the substrate, and a shield area around the electron emitting area. The shield area is formed of a material that does not produce an electron emitting source, when the electron emitting source is produced by a dry method. As a result, if a space between an electron drawing electrode and the electrode for the electron source is narrow, the percentage of anode current increases in the total current, thereby improving the current distribution percentage.
    Type: Grant
    Filed: June 7, 2002
    Date of Patent: July 12, 2005
    Assignee: Noritake Co., Ltd.
    Inventors: Tomotaka Ezaki, Sashiro Uemura, Junko Yotani, Hiromu Yamada, Takeshi Nagasako, Hiroyuki Kurachi, Kazunori Tatsuda, Yukiharu Seko, Tsuyoshi Maesoba
  • Publication number: 20030001478
    Abstract: Disclosed is an electrode for an electron source, a method for producing the same, and an electronic tube using the same which provide a decreased thickness of an electron emitting source, and an improved current distribution percentage. The electronic tube comprises a substrate, an electron emitting source area formed on the substrate, and a shield area around the electron emitting area. The shield area is formed of a material that does not produce an electron emitting source, when the electron emitting source is produced by a dry method. As a result, if a space between an electron drawing electrode and the electrode for the electron source is narrow, the percentage of anode current increases in the total current, thereby improving the current distribution percentage.
    Type: Application
    Filed: June 7, 2002
    Publication date: January 2, 2003
    Inventors: Tomotaka Ezaki, Sashiro Uemura, Junko Yotani, Hiromu Yamada, Takeshi Nagasako, Hiroyuki Kurachi, Kazunori Tatsuda, Yukiharu Seko, Tsuyoshi Maesoba