Abstract: The fixing metal fitting including: a joint base in groove shape mainly composing a joint metal; a cover spacer in groove shape capable of supporting the pillar's axial load by covering the joint base, wherein joint base including: a plane section in rectangular shape coinciding with an end surface of the pillar; a pair of groove walls bent vertically in L shape; and a joining plate standing from the plane section and supported by welded part J contacting at least the pair of groove walls or groove bottom, wherein the cover spacer including: a plane section in rectangular shape for supporting pillar by abutting to the pillar's end surface; a pair of groove walls composed of side edges of plane section respectively bent vertically in L shape; and a slit drilled such that the joining plate will be fitted into slit when the cover spacer is covering the joint base.

Abstract: The fixing metal fitting including: a joint base in groove shape mainly composing a joint metal; a cover spacer in groove shape capable of supporting the pillar's axial load by covering the joint base, wherein joint base including: a plane section in rectangular shape coinciding with an end surface of the pillar; a pair of groove walls bent vertically in L shape; and a joining plate standing from the plane section and supported by welded part J contacting at least the pair of groove walls or groove bottom, wherein the cover spacer including: a plane section in rectangular shape for supporting pillar by abutting to the pillar's end surface; a pair of groove walls composed of side edges of plane section respectively bent vertically in L shape; and a slit drilled such that the joining plate will be fitted into slit when the cover spacer is covering the joint base.

Abstract: A method for fabricating a semiconductor device includes forming a high-dielectric constant insulating film including a high-dielectric constant film; forming a first conductive film including an oxide film on an upper surface thereof and containing at least one of high melting point metal or a compound thereof; forming a second conductive film containing silicon on the first conductive film with the oxide film being interposed therebetween; forming a mixing layer by performing ion implantation to the first and second conductive films to mix a constituent material of the oxide film and silicon of the second conductive film together; and forming the mixing layer into a conductive layer by performing heat treatment.

Abstract: A semiconductor device includes a resistive element and a MISFET. The resistive element includes a first conductive film formed on the semiconductor substrate and containing a metal, a second conductive film formed on the first conductive film and containing silicon, and an insulating film formed between the first conductive film and the second conductive film.

Abstract: A semiconductor device is provided and includes a substrate, a photoelectric converting portion, a plurality of optical waveguide portions stacked above the photoelectric conversion portion, each of the plurality of optical waveguide portions including a translucent material and being shaped in a taper.

Abstract: A semiconductor device is provided and includes a substrate, a photoelectric converting portion, a plurality of optical waveguide portions stacked above the photoelectric conversion portion, each of the plurality of optical waveguide portions including a translucent material and being shaped in a taper.

Abstract: A semiconductor device is provided and includes a substrate, a photoelectric converting portion, a plurality of optical waveguide portions stacked above the photoelectric conversion portion, each of the plurality of optical waveguide portions including a translucent material and being shaped in a taper.

Abstract: The present invention provides a method for manufacturing a solid-state image pickup element in which an intralayer lens is formed above a solid-state image pickup element by: a first step of forming a film using an intralayer lens forming material; a second step of reducing an aspect ratio which is obtained by dividing a depth of concave portion after undergoing the first step by a spacing between convex portions, by either performing etchback after coating the film with a resist or performing sputter etching; and a third step of forming a new film on the film with the reduced aspect ratio using the intralayer lens forming material.

Abstract: A method of and an apparatus for supplying a powdery material to a workpiece to be processed thereby. According to the method, the powdery material is discharged from a hopper and metered, and then fed into a tube extending in the vicinity of the workpiece. Ultrasonic vibrations are imparted to the tube to supply the powdery material to a portion to be processed of the workpiece while the amount of the supplied powdery material is being detected. The apparatus includes a hopper for storing the powdery material, the hopper having an outlet, a tube extending from the outlet to a position adjacent to the workpiece for conveying the powdery material therethrough, and an ultrasonic vibrating device mounted on the tube for imparting ultrasonic vibrations to the tube, and a device mounted on the tube for detecting the amount of the powdery material supplied through the tube.