Abstract: Described are methods and systems for the treatment of individuals having a disorder characterized by complement system dysregulation. The described methods and systems may be used for a variety of purposes, including for example, establishing one or both of a general or personalized dosing schedule for treatment using a complement inhibitor, establishing a dosage schedule sufficient to maintain an effective amount of complement inhibitor, establishing general dosing schedules for novel complement modifying agents and identifying a treatment regimen and/or dose eliminating the possibility of under dosing medication, and treatment regimen and/or dose for reducing or preventing toxicity in a patient.

Abstract: This optical waveguide detection element includes a substrate, an optical waveguide layer formed on the substrate, and a photodetector. The optical waveguide layer includes a first optical waveguide in which visible light having a wavelength of 380 nm to 800 nm propagates, a second optical waveguide in which near-infrared light having a wavelength of 801 nm to 2000 nm propagates, and a third optical waveguide in which light propagates to a light receiving surface of the photodetector. A visible light output port of the first optical waveguide from which the visible light is output, a near-infrared light output port of the second optical waveguide from which the near-infrared light is output, and a reflected light input port of the third optical waveguide to which the near-infrared light is reflected and returned are arranged on one end surface of the optical waveguide layer.

Abstract: Provided is a crystal of a novel pyrido[3, 4-d]pyrimidine derivative having excellent CDK 4/6 inhibitory activity. A crystal of a compound represented by formula (I). In the formula, R1 represents a hydrogen atom or a C1-3 alkyl group; R2 represents a hydrogen atom or an oxo group; L represents a single bond or a C1-3 alkylene group; and X represents CH or N.

Abstract: Provided is a crystal of a novel pyrido[3, 4-d]pyrimidine derivative having excellent CDK 4/6 inhibitory activity. A crystal of a compound represented by formula (I). In the formula, R1 represents a hydrogen atom or a C1-3 alkyl group; R2 represents a hydrogen atom or an oxo group; L represents a single bond or a C1-3 alkylene group; and X represents CH or N.

Abstract: The purpose of the present invention is to provide a compound that has excellent CDK4/6 inhibitory activity. The present invention is a compound represented by formula (I) or a pharmaceutically acceptable salt of the compound.

Abstract: Provided is a substrate processing apparatus that removes a film by supplying a processing liquid to the peripheral edge of a substrate. An ejection unit ejects the processing liquid to the peripheral edge of the substrate held and rotated by a substrate holding unit. An ejection position setting unit sets the ejection position of the processing liquid of the ejection unit to correspond to the removal width of the film included in a recipe, and a property information acquisition unit acquires property information of the film to be removed. A correction amount acquisition unit acquires the correction amount for correcting the ejection position of the processing liquid based on the property information of the film, and an ejection position correction unit corrects the ejection position of the processing liquid by the ejection unit based on the correction amount acquired by the correction amount acquisition unit.

Abstract: The purpose of the present invention is to provide a compound that has excellent CDK4/6 inhibitory activity. The present invention is a compound represented by formula (I) or a pharmaceutically acceptable salt of the compound.

Abstract: The purpose of the present invention is to provide a compound having an excellent CDK4/6 inhibiting activity. The present invention is a compound represented by general formula (I) or a pharmaceutically acceptable salt thereof.

Abstract: The purpose of the present invention is to provide a compound having an excellent CDK4/6 inhibiting activity. The present invention is a compound represented by general formula (I) or a pharmaceutically acceptable salt thereof.

Abstract: Provided is a substrate processing apparatus that removes a film by supplying a processing liquid to the peripheral edge of a substrate. An ejection unit ejects the processing liquid to the peripheral edge of the substrate held and rotated by a substrate holding unit. An ejection position setting unit sets the ejection position of the processing liquid of the ejection unit to correspond to the removal width of the film included in a recipe, and a property information acquisition unit acquires property information of the film to be removed. A correction amount acquisition unit acquires the correction amount for correcting the ejection position of the processing liquid based on the property information of the film, and an ejection position correction unit corrects the ejection position of the processing liquid by the ejection unit based on the correction amount acquired by the correction amount acquisition unit.

Abstract: A liquid processing apparatus according to the present disclosure includes: a substrate holding unit configured to horizontally hold a substrate; a rotation driving unit configured to rotate the substrate holding unit about a vertical axis; a processing liquid supply unit configured to supply a processing liquid to the substrate while the substrate is being rotated; an upper guide ring and a lower guide ring which are configured to be rotated together with the substrate holding unit, to surround the substrate, to be arranged vertically to overlap each other with a gap therebetween, and to guide the processing liquid scattered from the substrate; and a rotating cup configured to be rotated together with the substrate holding unit, and to receive and downwardly guide the guided processing liquid.

Abstract: A particle can be suppressed from being generated by removing a processing liquid or crystals caused by the processing liquid which adhere to a cover member. A substrate processing apparatus includes a substrate holding unit 3 configured to hold a substrate W; a processing liquid supply unit 7 configured to supply a processing liquid onto the substrate W held in the substrate holding unit 3; and a cover member 5 which has a ring shape and is disposed to face a peripheral portion of the substrate held in the substrate holding unit 3. Further, the cover member 5 is equipped with a heater 701 configured to heat the cover member 5.

Abstract: In a substrate treatment method for supplying a coating solution to a substrate with projections and depressions on a front surface thereof to form a coating film on the front surface of the substrate, the coating solution is supplied to the rotating substrate to form a coating film on the front surface of the substrate, and the substrate having the coating film formed thereon is heated to adjust an etching condition of the coating film. Next, the etching solution is supplied to the rotating substrate to etch the coating film, and thereafter the coating solution is supplied to the substrate to form a flat coating film on the front surface of the substrate. Thereafter, the substrate is heated to cure the coating film. This flattens the coating film with uniformity and high accuracy without undergoing a high-load process such as chemical mechanical polishing.

Abstract: Disclosed are a substrate processing apparatus and a substrate processing method configured to perform a processing of a substrate by a processing liquid, in which the processing liquid is supplied to a substrate which rotates to process the substrate. The substrate processing apparatus includes a substrate rotating unit that rotates the substrate, a processing liquid supply unit that supplies the processing liquid to the substrate, a collection cup disposed around the substrate to collect the processing liquid supplied to the substrate, and form an air stream that flows downward from an opening formed at a top of the collection cup through a periphery of an outside of the substrate, and a negative pressure generating unit which is provided at an inside of the collection cup and at an outside of the opening and generates a negative pressure which acts toward the outside of the substrate.

Abstract: Disclosed is a method for processing a substrate including a first process and a second process. The first process comprises supporting the substrate formed with a titanium-containing film on its front surface and rear surface by a support unit which is rotatably installed; rotating the substrate along with the support unit; and supplying a first processing liquid containing hydrofluoric acid to the rear surface of the substrate thereby processing the rear surface of the substrate with the first processing liquid. The second process comprises supplying a second processing liquid containing ammonia hydrogen peroxide mixture to the rear surface of the substrate after the first process is completed, thereby processing the rear surface of the substrate with the second processing liquid.

Abstract: Disclosed is a liquid processing apparatus and a liquid processing method, which can process an entire wafer at a sufficiently high temperature and can sufficiently suppress adhesion of particles on a surface of the wafer, when the peripheral portion of the wafer is processed. The liquid processing apparatus includes a holding part to hold the substrate, a rotation driving part to rotate the holding part, and a shield unit. The shield unit includes an opposed plate opposed to the substrate held by the holding part, a heating part to heat the substrate through the opposed plate, and a heated gas supplying part to supply heated gas to a surface of the substrate held by the holding part.

Abstract: A liquid processing apparatus according to the present disclosure includes: a substrate holding unit configured to horizontally hold a substrate; a rotation driving unit configured to rotate the substrate holding unit about a vertical axis; a processing liquid supply unit configured to supply a processing liquid to the substrate while the substrate is being rotated; an upper guide ring and a lower guide ring which are configured to be rotated together with the substrate holding unit, to surround the substrate, to be arranged vertically to overlap each other with a gap therebetween, and to guide the processing liquid scattered from the substrate; and a rotating cup configured to be rotated together with the substrate holding unit, and to receive and downwardly guide the guided processing liquid.

Abstract: In the present invention, a holding table incorporating a heater is provided, for example, in a treatment container of a planarization unit. A pressing plate having a lower surface formed flat is disposed above the holding table. The pressing plate is movable in the vertical direction and can lower to the holding table to press a resist film on the substrate from above. The pressing plate intermittently presses the upper surface of the resist film to planarize the upper surface while the heater is heating the substrate on the holding table at a predetermined temperature to dry the resist film. According to the present invention, a coating film applied on the substrate can be sufficiently planarized and dried.

Abstract: Disclosed is a method for processing a substrate including a first process and a second process. The first process comprises supporting the substrate formed with a titanium-containing film on its front surface and rear surface by a support unit which is rotatably installed; rotating the substrate along with the support unit; and supplying a first processing liquid containing hydrofluoric acid to the rear surface of the substrate thereby processing the rear surface of the substrate with the first processing liquid. The second process comprises supplying a second processing liquid containing ammonia hydrogen peroxide mixture to the rear surface of the substrate after the first process is completed, thereby processing the rear surface of the substrate with the second processing liquid.

Abstract: In a substrate treatment method for supplying a coating solution to a substrate with projections and depressions on a front surface thereof to form a coating film on the front surface of the substrate, the coating solution is supplied to the rotating substrate to form a coating film on the front surface of the substrate, and the substrate having the coating film formed thereon is heated to adjust an etching condition of the coating film. Next, the etching solution is supplied to the rotating substrate to etch the coating film, and thereafter the coating solution is supplied to the substrate to form a flat coating film on the front surface of the substrate. Thereafter, the substrate is heated to cure the coating film. This flattens the coating film with uniformity and high accuracy without undergoing a high-load process such as chemical mechanical polishing.