Abstract: According to one embodiment, there is provided a mask data generation method. The mask data generation method includes obtaining depth information about a pattern depth of a hole included in design information about a semiconductor device. The mask data generation method includes obtaining a first correction rule used to correct, in terms of the pattern depth, a process conversion difference between a resist pattern and a processed pattern. The mask data generation method includes determining temporary mask data including a lithography target pattern by applying a first process conversion difference correction processing to a dimension of hole pattern arranged in design layout data based on the depth information and the first correction rule.

Abstract: According to one embodiment, in a mask data generation system, a first acquisition part is configured to acquire pattern contour data included in each of a plurality of layout candidate data for a first layer. A second acquisition part is configured to acquire pattern contour data included in layout data for a second layer. A superimposing part is configured to superimpose the contour data acquired by the first acquisition part and the contour data acquired by the second acquisition part with each other, for each of the plurality of layout candidate data. An area calculation part is configured to calculate an overlap area between a first pattern in the contour data acquired by the first acquisition part and a second pattern in the contour data acquired by the second acquisition part, based on the superimposed data, for each of the plurality of layout candidate data.

Abstract: According to one embodiment, in a mask data generation system, a first acquisition part is configured to acquire pattern contour data included in each of a plurality of layout candidate data for a first layer. A second acquisition part is configured to acquire pattern contour data included in layout data for a second layer. A superimposing part is configured to superimpose the contour data acquired by the first acquisition part and the contour data acquired by the second acquisition part with each other, for each of the plurality of layout candidate data. An area calculation part is configured to calculate an overlap area between a first pattern in the contour data acquired by the first acquisition part and a second pattern in the contour data acquired by the second acquisition part, based on the superimposed data, for each of the plurality of layout candidate data.

Abstract: According to one embodiment, there is provided a mask data generation method. The mask data generation method includes obtaining depth information about a pattern depth of a hole included in design information about a semiconductor device. The mask data generation method includes obtaining a first correction rule used to correct, in terms of the pattern depth, a process conversion difference between a resist pattern and a processed pattern. The mask data generation method includes determining temporary mask data including a lithography target pattern by applying a first process conversion difference correction processing to a dimension of hole pattern arranged in design layout data based on the depth information and the first correction rule.