Abstract: The device is equipped with a crucible main body (4), wherein silicon carbide raw material (5), which is the raw material for silicon carbide single crystals (20), and a seed crystal (7), whereon a sublimation gas obtained by sublimating the silicon carbide raw material (5) is recrystallized, that are accommodated facing each other, and multiple guide members (8) are provided inside the crucible main body (4). Circular openings are formed in the guide members (8) at positions corresponding to the seed crystal (7), and are provided at intervals from each other between the silicon carbide raw material (5) and the seed crystal (7).

Abstract: A method for producing a silicon carbide single crystal including a steps of, loading a sublimation-raw material into a reaction vessel of a production apparatus for a silicon carbide single crystal, and placing a seed crystal for a silicon carbide single crystal in such a manner that the seed crystal substantially faces the sublimation-raw material, and re-crystallizing the sublimation-raw material sublimated by heating on a surface of the seed crystal to grow a silicon carbide single crystal, the method further including applying a thermosetting material containing silicon component to a back surface of the seed crystal before the placing the seed crystal in the reaction vessel of the production apparatus for the silicon carbide single crystal.

Abstract: A method of producing a silicon carbide sintered body jig using a reaction sintering method, comprising: (a)dispersing a silicon carbide powder and an organic substance as a carbon source in a solvent, to produce a mixed slurry powder, (b) pouring the resulted slurry powder into a mold and drying this to obtain a green body, (c) temporarily-sintering the resulted green body under a vacuum atmosphere at 1800° C., to obtain a temporarily-sintered body, (d) temporarily-molding said temporarily-sintered body, to obtain a temporarily-molded body, (e) impregnating a melted metal silicon into the resulted temporarily-molded body by a capillary phenomenon and reacting free carbon in said temporarily-molded body with silicon sucked into said temporarily-molded body by a capillary phenomenon, to obtain a silicon carbide sintered body, and (f) subjecting the resulted silicon carbide sintered body to precise processing, to obtain a silicon carbide sintered body jig.

Abstract: A method of producing a silicon carbide sintered body jig using a reaction sintering method, comprising: (a)dispersing a silicon carbide powder and an organic substance as a carbon source in a solvent, to produce a mixed slurry powder, (b) pouring the resulted slurry powder into a mold and drying this to obtain a green body, (c) temporarily-sintering the resulted green body under a vacuum atmosphere at 1800° C., to obtain a temporarily-sintered body, (d) temporarily-molding said temporarily-sintered body, to obtain a temporarily-molded body, (e) impregnating a melted metal silicon into the resulted temporarily-molded body by a capillary phenomenon and reacting free carbon in said temporarily-molded body with silicon sucked into said temporarily-molded body by a capillary phenomenon, to obtain a silicon carbide sintered body, and (f) subjecting the resulted silicon carbide sintered body to precise processing, to obtain a silicon carbide sintered body jig.