Abstract: According to one embodiment, an image processing apparatus connected to an external memory and a cache memory. The apparatus includes a counter, a coordinate calculator, a tag checker, a pixel referring module, a pixel value calculator and an outputting module. The counter determines a converted coordinate according to a predetermined execution sequence. The coordinate calculator calculates a unconverted coordinate used to calculate a converted pixel value located at the converted coordinate. The tag checker generates a conversion request to calculate the converted pixel value with reference to an unconverted pixel located at the unconverted coordinate. The pixel referring module reads the unconverted pixel from the cache memory based on the conversion request when the unconverted pixel is stored in the cache memory. The pixel value calculator calculates the converted pixel value with reference to the read unconverted pixel.

Abstract: A compound semiconductor epitaxial substrate having a pseudomorphic high electron mobility field effect transistor structure including an InGaAs layer as a strained channel layer and an AlGaAs layer containing n type impurities as a front side electron-donating layer, wherein said substrate contains an InGaP layer in an orderly state on the front side of the above described InGaAs layer as the strained channel layer.

Abstract: An autonomous mobile device that moves while autonomously avoiding zones into which entry should be avoided even if no obstacle exists therein includes a laser range finder that acquires peripheral obstacle information, a storage unit that stores an environment map that shows an obstacle zone where an obstacle exists, and a no-entry zone map which shows a no-entry zone into which entry is prohibited, a self-location estimation unit that estimates the self-location of a host device by using the obstacle information acquired by the laser range finder and the environment map, and a travel control unit that controls the host device to autonomously travel to the destination by avoiding the obstacle zone and the no-entry zone based on the estimated self-location, the environment map, and the no-entry zone map.

Abstract: An autonomous moving apparatus arranged to travel autonomously in a surrounding environment preferably includes: a distance measuring sensor arranged to output detection waves, detect a distance between the apparatus and an object which has reflected the detection wave based on a reflection state of the detection wave, and acquire information about the distance between the apparatus and the object which exists in the surroundings of the apparatus; an inclination sensor arranged to detect an inclination of the distance measuring sensor; and a control unit arranged to estimate the self-position in the surrounding environment and generate the global map of the surrounding environment based on the distance information. When the distance measuring sensor is determined to be inclined based on a detection result of the inclination sensor, the control unit stops estimating the self-position based on the distance information and stops generating the global map based on the distance information.

Abstract: A robot capable of traveling while constantly directing a predetermined part of a main body to a detection target. In the robot, a main body is jointed to a traveling unit so that relative rotation is possible between the main body and the traveling unit. Based on position information of a detection target detected by a position detection sensor, a control device controls, while the traveling unit is traveling, a body drive motor so that a front surface of the main body constantly faces the detection target and rotates the main body relative to the traveling unit. Accordingly, a CCD camera, a microphone, a speaker, display or the like provided on the front surface of the main body constantly face the detection target. Thus, the robot can reliably communicate with the detection target even during traveling, through mutual transmission of information between the robot and the detection target.

Abstract: Provided is an autonomous mobile device capable of taking action that is suitable for executing a task in accordance with the situation.

Abstract: According to one embodiment, an image processing apparatus connected to an external memory and a cache memory. The apparatus includes a counter, a coordinate calculator, a tag checker, a pixel referring module, a pixel value calculator and an outputting module. The counter determines a converted coordinate according to a predetermined execution sequence. The coordinate calculator calculates a unconverted coordinate used to calculate a converted pixel value located at the converted coordinate. The tag checker generates a conversion request to calculate the converted pixel value with reference to an unconverted pixel located at the unconverted coordinate. The pixel referring module reads the unconverted pixel from the cache memory based on the conversion request when the unconverted pixel is stored in the cache memory. The pixel value calculator calculates the converted pixel value with reference to the read unconverted pixel.

Abstract: Enabled is to estimate a self-position even when no landmark is seen or when an article confusing the landmark is brought in. An omnidirectional camera recognizes a vertical land-mark near a wall to determine a candidate for the self-position. On the basis of the candidate determined, a break in a map between a floor and a wall is projected on the camera image thereby to perform the matching.

Abstract: A rotary electric shaver includes an outer cutter which has an upper surface with annular shaving faces, in which many hair-entry apertures are formed, and an inner cutter having small blades, which rotate in sliding contact with the lower surface of the outer cutter from below the shaving faces. The outer cutter (10) has a plurality of concentric annular shaving faces (16, 18), which are integrally formed therewith. The density of the hair-entry apertures (65) is varied in the circumferential direction of the plurality of annular shaving faces (16, 18). The rotary electric shaver increases the shaving area of the outer cutter to improve shaving efficiency and also restrains excessively close shaving thereby to protect skin even when the contact pressure of an area near the center of the outer cutter against skin increases.

Abstract: A method of producing a semiconductor wafer suited to form types of devices such as HBT and FET on a single semiconductor wafer is provided. The method, by repeating steps including introducing, into a reaction chamber for forming a semiconductor by crystal growth, a first-impurity gas containing an element or a compound containing a first impurity atom as a constituent, thereby producing semiconductor wafers, includes, after introducing the first-impurity gas: taking out a produced semiconductor wafer; disposing a first semiconductor in the reaction chamber; introducing, into the reaction chamber, a second-impurity gas containing an element or a compound containing, as a constituent, a second impurity atom exhibiting a conduction type opposite to the conduction type of the first impurity atom within the first semiconductor; heating the first semiconductor in an atmosphere of the second-impurity gas; and forming a second semiconductor on the heated first semiconductor by crystal growth.

Abstract: There is provided a high-performance compound semiconductor epitaxial wafer that has an improved linearity of the voltage-current characteristic, a producing method thereof, and a judging method thereof. Provided is a semiconductor wafer including a compound semiconductor that produces a two-dimensional carrier gas, a carrier supply semiconductor that supplies a carrier to the compound semiconductor, and a mobility lowering semiconductor that is disposed between the compound semiconductor and the carrier supply semiconductor and that has a mobility lowering factor that makes the mobility of the carrier in the mobility lowering semiconductor lower than the mobility of the carrier in the compound semiconductor.

Abstract: A disparity profile indicating a relation between a perpendicular position on time series images and a disparity on a target monitoring area based on an arrangement of a camera is calculated. Processing areas are set, by setting a height of each of the processing areas using a length at the bottom of the image obtained by converting a reference value of a height of an object according to the profile, while setting a position of each bottom of processing areas on the image. An object having a height higher than a certain height with respect to the monitoring area, unify an object detection result in each processing area according to the disparity of the object, and detect the object of the whole monitoring area from each processing area is detected. Position and speed for the object detected by the object primary detection unit are estimated.

Abstract: A method of producing a semiconductor wafer includes placing a base wafer within a reaction chamber, and epitaxially growing a p-type Group 3-5 compound semiconductor on the base wafer by supplying, into the reaction chamber, a Group 3 source gas consisting of an organometallic compound of a Group 3 element, a Group 5 source gas consisting of a compound of a Group 5 element, and an impurity gas including an impurity that is to be incorporated as a dopant into a semiconductor to serve as a donor. Here, during the epitaxial growth of the p-type Group 3-5 compound semiconductor, the flow rate of the impurity gas and the flow rate ratio of the Group 5 source gas to the Group 3 source gas are set so that the product N×d (cm?2) of the residual carrier concentration N (cm?3) and the thickness d (cm) of the p-type Group 3-5 compound semiconductor may be 8.0×1011 or less.

Abstract: A compound semiconductor epitaxial substrate having a pseudomorphic high electron mobility field effect transistor structure including an InGaAs layer as a strained channel layer and an AlGaAs layer containing n type impurities as a front side electron-donating layer, wherein said substrate contains an InGaP layer in an orderly state on the front side of the above described InGaAs layer as the strained channel layer.

Abstract: A compound semiconductor epitaxial substrate having a pseudomorphic high electron mobility field effect transistor structure including an InGaAs layer as a strained channel layer and an AlGaAs layer containing n type impurities as a front side electron-donating layer, wherein said substrate contains an InGaP layer in an orderly state on the front side of the above described InGaAs layer as the strained channel layer.

Abstract: An electronic controller defining an autonomous mobile device a self-location estimation unit to estimate a self-location based on a local map that is created according to distance/angle information relative to an object in the vicinity and the travel distance of an omni wheel, an environmental map creation unit to create an environmental map of a mobile area based on the self-location and the local map during the guided travel with using a joystick, a registration switch to register the self-location of the autonomous mobile device as the position coordinate of the setting point when the autonomous mobile device reaches a predetermined setting point during the guided travel, a storage unit to store the environmental map and the setting point, a route planning unit to plan the travel route by using the setting point on the environmental map stored in the storage unit, and a travel control unit to control the autonomous mobile device to autonomously travel along the travel route.

Abstract: An environmental map correction device that acquires an environmental map that matches an actual ambient environment includes a conversion unit arranged to convert object existence probability information of respective grids configuring a global map into image information (shading information of a black and white image, a display unit arranged to display a global map image based on the converted image information, an operation input unit arranged to receive a correcting operation from a user, a correction unit arranged to correct the global map image displayed by the display unit according to the correcting operation by the user, and an inversion unit arranged to acquire a corrected global map by inverting the corrected global map image (shading information) into the object existence probability information.

Abstract: There are provided a higher-performance compound semiconductor epitaxial substrate having improved electron mobility characteristics and its production method. The compound semiconductor epitaxial substrate includes a channel layer in which electrons travel and an epitaxial layer on each of a front side and a back side of the channel layer, wherein a total p-type carrier concentration A (/cm2) per unit area in the epitaxial layer on the back side of the channel layer and a total p-type carrier concentration B (/cm2) per unit area in the epitaxial layer on the front side of the channel layer satisfy the following expression (1): 0<A/B?3.

Abstract: A rotary type electric shaver with an outer cutter frame provided on a shaver main body. An outer cutter installed in this outer cutter frame and having its shaving surface on the upper surface of a ring-shaped thin layer portion. An inner cutter 16 having a cutter body that rotates and makes sliding contact from below with the lower surface of the outer cutter 14, wherein a thin layer portion 28 is formed in a substantially arc shape that is convex upward in a radial and vertical cross section that includes a center axis line which is the rotational center of the inner cutter. The thickness of the thin layer portion near the apex of the upward convex is smallest at the apex and gradually becomes thicker as distance increases away from the apex.

Abstract: In a compound semiconductor epitaxial substrate used for a strain channel high electron mobility field effect transistor which comprises an InGaAs layer as a channel layer 9 and AlGaAs layers containing n-type impurities as electron supplying layers 6 and 12, the channel layer 9 has an electron mobility at room temperature of 8300 cm2/V·s or more by adjusting an In composition of the InGaAs layer composing the channel layer 9 to 0.25 or more and optimizing the In composition and the thickness of the channel layer 9. GaAs layers 8 and 10 having a thickness of 4 nm or more each may be laminated respectively in contact with a top surface and a bottom surface of the channel layer 9.