Abstract: A coil spring includes a wire rod and an elastic coat provided on the wire rod. The coil spring includes a coil section including a plurality of coil portions. The wire rod includes a round cross-sectional portion, a cross-section varying portion, and a rectangular cross-sectional portion along the longitudinal direction of the wire rod. The cross section of the rectangular cross-sectional portion is substantially square and has a first plane and a second plane. The first plane and the second plane oppose each other in the coil section. The elastic coat is provided on at least one of the first plane and the second plane. The elastic coat is continuous from the round cross-sectional portion to the cross-sectional variation portion and the rectangular cross-sectional portion.

Abstract: A method for evaluating surface defects of a substrate to be bonded: preparing a mirror-polished silicon single crystal substrate; inspecting surface defects on the mirror-polished silicon single crystal substrate; depositing a polycrystalline silicon layer on a surface of the silicon single crystal substrate subjected to the defect inspection; performing mirror edge polishing to the silicon single crystal substrate having the polycrystalline silicon layer deposited thereon; polishing a surface of the polycrystalline silicon layer; inspecting surface defects on the polished polycrystalline silicon layer; and comparing coordinates of defects detected at the step of inspecting the surface defects on the silicon single crystal substrate with counterparts detected at the step of inspecting the surface defects on the polycrystalline silicone layer and determining quality of the silicon single crystal substrate having the polycrystalline silicon layer as a substrate to be bonded on the basis of presence/absence of

Abstract: A method for evaluating surface defects of a substrate to be bonded: preparing a mirror-polished silicon single crystal substrate; inspecting surface defects on the mirror-polished silicon single crystal substrate; depositing a polycrystalline silicon layer on a surface of the silicon single crystal substrate subjected to the defect inspection; performing mirror edge polishing to the silicon single crystal substrate having the polycrystalline silicon layer deposited thereon; polishing a surface of the polycrystalline silicon layer; inspecting surface defects on the polished polycrystalline silicon layer; and comparing coordinates of defects detected at the step of inspecting the surface defects on the silicon single crystal substrate with counterparts detected at the step of inspecting the surface defects on the polycrystalline silicone layer and determining quality of the silicon single crystal substrate having the polycrystalline silicon layer as a substrate to be bonded on the basis of presence/absence of

Abstract: Provided is a susceptor 13 for manufacturing an epitaxial wafer, comprising a mesh-like groove 13b on a mount face on which a silicon substrate W is to be mounted, wherein a coating H of silicon carbide is formed on the mount face, and the coating has a surface roughness of 1 ?m or more in centerline average roughness Ra and a maximum height of a protrusion 13p generated in forming the coating H of 5 ?m or less. Thus, defects such as warping and slip as well as adhesion of the silicon substrate to the susceptor are prevented.

Abstract: The present invention provides a vapor phase growth susceptor as a susceptor that supports a wafer in a vapor phase growth apparatus for subjecting a thin film to vapor phase growth on a wafer surface, wherein a pocket configured to accommodate a wafer is formed in the susceptor, many rectangular protrusions are formed of grooves having a mesh pattern on a bottom surface of the pocket, and a groove depth at an outer peripheral portion is shallower than that at a central portion of the bottom surface of the pocket. As a result, problems such as a reduction in film thickness due to a drop in temperature at the wafer outer peripheral portion, warpage at the time of mounting the wafer, deposition on a wafer back surface outer peripheral portion, and others are improved.

Abstract: Provided is a susceptor 13 for manufacturing an epitaxial wafer, comprising a mesh-like groove 13b on a mount face on which a silicon substrate W is to be mounted, wherein a coating H of silicon carbide is formed on the mount face, and the coating has a surface roughness of 1 ?m or more in centerline average roughness Ra and a maximum height of a protrusion 13p generated in forming the coating H of 5 ?m or less. Thus, defects such as warping and slip as well as adhesion of the silicon substrate to the susceptor are prevented.

Abstract: In a vapor phase growth apparatus including a reaction chamber, a susceptor, a lift pin, an upper heating device, and a lower heating device, a heating ratio between the upper heating ratio and the lower heating ratio is adjusted.