Abstract: A device that measures a temperature of a heat plate for heating a target substrate mounted thereon, includes: a temperature measurement substrate including a substrate body and temperature sensors installed in the substrate body; a memory part to store correction parameters over a plurality of time zones after the temperature measurement substrate is mounted on the heat plate; and a data processing part configured to acquire time transition data of a temperature by correcting respective temperature detection values sampled at predetermined time intervals after the temperature measurement substrate is mounted on the heat plate, using the correction parameters stored in the memory part in a corresponding relationship with the temperature sensors and the time zones. The correction parameters are obtained in advance based on a standard temperature transition data acquired in advance using the temperature sensors and a time transition data acquired by each of the temperature sensors.

Abstract: An operation amount for operating a flow rate control mechanism of a processing liquid can be appropriately adjusted based on a physical property of the processing liquid or a characteristic of a processing liquid supply mechanism while supplying the processing liquid. In a processing liquid supply device that supplies a processing liquid to a substrate, a processing liquid supply mechanism discharges the processing liquid toward the substrate via a flow rate control mechanism which controls the processing liquid based on an operation amount. A flow rate detection unit detects a flow rate of the processing liquid supplied to the substrate. A system identification unit determines a system parameter according to a system model of the processing liquid supply mechanism. A flow rate controller determines a new operation amount of the flow rate control mechanism by using the system parameter.

Abstract: A device that measures a temperature of a heat plate for heating a target substrate mounted thereon, includes: a temperature measurement substrate including a substrate body and temperature sensors installed in the substrate body; a memory part to store correction parameters over a plurality of time zones after the temperature measurement substrate is mounted on the heat plate; and a data processing part configured to acquire time transition data of a temperature by correcting respective temperature detection values sampled at predetermined time intervals after the temperature measurement substrate is mounted on the heat plate, using the correction parameters stored in the memory part in a corresponding relationship with the temperature sensors and the time zones. The correction parameters are obtained in advance based on a standard temperature transition data acquired in advance using the temperature sensors and a time transition data acquired by each of the temperature sensors.

Abstract: An operation amount for operating a flow rate control mechanism of a processing liquid can be appropriately adjusted based on a physical property of the processing liquid or a characteristic of a processing liquid supply mechanism while supplying the processing liquid. In a processing liquid supply device that supplies a processing liquid to a substrate W, a processing liquid supply mechanism discharges the processing liquid toward the substrate W via a flow rate control mechanism 402 which controls the processing liquid based on an operation amount. A flow rate detection unit 403 detects a flow rate of the processing liquid supplied to the substrate W. A system identification unit 182 determines a system parameter according to a system model of the processing liquid supply mechanism. A flow rate controller 182 determines a new operation amount of the flow rate control mechanism by using the system parameter.

Abstract: The pressure sensor detects a pressure in the operation chamber when the first opening/closing valve is opened at a time of starting a replenishment of the chemical liquid into the chemical liquid pump. The flow rate sensor detects an exhaust flow rate exhausted from the operation chamber.

Abstract: There is provided a chemical liquid supply system configured to filter a chemical liquid by opening/closing operations of first and second opening/closing valves and a supply/exhaust operation. The chemical liquid supply system includes a pressure sensor, a flow meter, an electro-pneumatic regulator and a controller. The pressure sensor detects a pressure in the operation room when the first opening/closing valve is opened at a time of starting a replenishment of the chemical liquid into the chemical liquid pump. The flow rate sensor detects an exhaust flow rate exhausted from the operation room. The controller adjusts an exhaust pressure by controlling the electro-pneumatic regulator based on the detected pressure and the detected exhaust flow rate so as not to cause an excessive pressure change when the replenishment of the chemical liquid is started.

Abstract: A heat processing apparatus comprises a hot plate for putting the substrate on or near its surface, a ceiling with a first and second concentric regions with a first and second heat pipes, respectively, opposite to the hot plate surface, a member surrounding a space between the hot plate and the ceiling, a gas flow generator supplying gas to the a region from a circumference of the hot plate to a center of the ceiling, and a temperature control mechanism for controlling a regional temperature of the first region in such a manner that a heat emission is greater from a center of the substrate than from a circumference of the substrate, thus heating a substrate to a uniform temperature all over its surface.

Abstract: An object of the present invention is to heat a substrate at a uniform temperature all over its surface. The heat processing apparatus of the present invention comprises: a hot plate for putting the substrate on or near its surface; a ceiling with a first and second concentric regions with a first and second heat pipes, respectively, opposite to the hot plate surface; a surrounding member for surrounding a space between the hot plate and the ceiling; gas flow generation means for generating a gas flow in the space from a circumference of the hot plate to a center of the ceiling; and a temperature control mechanism for controlling a regional temperature of the first region. The temperature control mechanism controls the regional temperature in such a manner that a heat emission is greater from a center of the substrate than from a circumference of the substrate.