Abstract: A method for manufacturing a solar cell (100) includes the steps of: a step of cleaning an exposed region (R2) on a rear surface of an n-type crystalline silicon substrate (10n), wherein the step is carried out subsequent to a step of patterning an i-type amorphous semiconductor layer (11i) and a p-type amorphous semiconductor layer (11p) and prior to a step of forming an i-type amorphous semiconductor layer (12i).

Abstract: Provided is a method capable of easily manufacturing a back contact solar cell with high photoelectric conversion efficiency. A semiconductor layer having a first conductivity which is the same as that of a semiconductor substrate is formed substantially entirely on the principal surface of the semiconductor substrate inclusive of a surface of an insulation layer. A portion of the semiconductor layer located on the insulation layer is removed, and thereby an opening is formed. The insulation layer exposed through the opening is removed while the semiconductor layer is used as a mask, and thereby a surface of a first semiconductor region is partially exposed. Electrodes which are electrically connected to the surface of the first semiconductor region and to a surface of the semiconductor layer respectively are formed.

Abstract: [The PROBLEMS] A solar cell capable of preventing scratches from occurring on a junction portion between a semiconductor layer and a semiconductor substrate, and capable of suppressing deterioration of conversion efficiency is provided.

Abstract: A solar cell (100) includes a p-type amorphous semiconductor layer (11p), an n-type amorphous semiconductor layer (12n), and a recombination layer (R) interposed between the p-type amorphous semiconductor layer (11p) and the n-type amorphous semiconductor layer (12n).

Abstract: A method for manufacturing a solar cell (100) includes the steps of: a step of cleaning an exposed region (R2) on a rear surface of an n-type crystalline silicon substrate (10n), wherein the step is carried out subsequent to a step of patterning an i-type amorphous semiconductor layer (11i) and a p-type amorphous semiconductor layer (11p) and prior to a step of forming an i-type amorphous semiconductor layer (12i).

Abstract: A method for manufacturing a solar cell (100) includes the steps of removing a resist film (50) and removing a part of an n-type amorphous semiconductor layer (12n).

Abstract: A photovoltaic element includes a collecting electrode formed via a transparent conductive film on a semiconductive layer having a semiconductor junction, wherein a conductive film is disposed on the collecting electrode. A modular structure is adopted in which a plurality of photovoltaic elements having such a structure are connected in series via a tab soldered onto the conductive film. On a light-transmission side, a conductive film is disposed to cover an entire surface of the transparent conductive film. This conductive film is allowed to act as a reflection film on a back surface side. A screen printing process is repeated for a plural number of times so that the collecting electrode is formed with a flattened surface.

Abstract: A photovoltaic device includes a substrate (1, 10) having a conductive electrode (2, 10), and a first semiconductor layer (3.sub.1, 11.sub.1) of a first conductivity type, a substantially intrinsic second semiconductor layer (3.sub.2, 11.sub.2) and a third semiconductor layer (3.sub.3, 11.sub.3) of the opposite conductivity type successively deposited on the conductive electrode. The hydrogen content in at least the first and second semiconductor layer (3.sub.1, 11.sub.1) is 10% or less. At least the second semiconductor layer (3.sub.2, 11.sub.2), is made of an amorphous semiconductor layer.