Abstract: A method of manufacturing a semiconductor light emitting device made of nitride III-V compound semiconductors is includes an active layer made of a first nitride III-V compound semiconductor containing In and Ga, such as InGaN; an intermediate layer made of a second nitride III-V compound semiconductor containing In and Ga and different from the first nitride III-V compound semiconductor, such as InGaN; and a cap layer made of a third nitride III-V compound semiconductor containing Al and Ga, such as p-type AlGaN, which are deposited in sequential contact.

Abstract: A semiconductor light emitting device made of nitride III-V compound semiconductors is includes an active layer made of a first nitride III-V compound semiconductor containing In and Ga, such as InGaN; an intermediate layer made of a second nitride III-V compound semiconductor containing In and Ga and different from the first nitride III-V compound semiconductor, such as InGaN; and a cap layer made of a third nitride III-V compound semiconductor containing Al and Ga, such as p-type AlGaN, which are deposited in sequential contact.

Abstract: A robot arm has: a drive gear that has a shaft; a gear frame being capable of turning about the shaft of the drive gear; a first follower gear being capable of turning, in synchronization with the drive gear, about a shaft fixed to the gear frame, in a direction opposite to the turning direction of the drive gear; a transmission control mechanism that is capable of locking the first follower gear to the drive gear; an arm that moves in synchronization with the first follower gear; and a collision detection unit that is capable of detecting a collision between the arm and an obstacle. The transmission control mechanism unlocks the follower gear from the drive gear in response to detection, by the collision detection unit, of collision between the arm and the obstacle.

Abstract: A manipulator is provided with an arm, an arm, a holding section, a first joint section pivotally interconnecting the arm and the arm, a second joint section pivotally interconnecting the arm and the holding section, a first joint driving section capable of driving the first joint section, a second joint driving section capable of driving the second joint section, a member specifying section for specifying one of the arms which has a possibility of collision with an obstacle or which has collided with the obstacle, and a control device for controlling the first joint driving section and the second joint driving section to pivotally move the one of the arms specified by the member specifying section in a direction away from the obstacle, and pivotally move the other of the arms in a direction toward the obstacle.

Abstract: It is aimed to provide a manipulator capable of reducing a colliding force exerted to an obstacle even in the case where the manipulator collides without being able to avoid a collision with the obstacle. A manipulator 1 includes an arm unit 3 rotatably provided on a main unit 2. A posture detector 10 executes a control to incline the arm unit 3 obliquely backward with respect to a moving direction P when the main unit 2 of the manipulator 1 is moved. Thus, the arm unit 3 collides with an obstacle 11 in an inclined state, wherefore a colliding force exerted to the obstacle 11 can be distributed.

Abstract: To provide a semiconductor light emitting device capable of improving an aspect ratio of a laser beam to make it close to a circular shape and a method of producing the same, a first conductive type first cladding layer 11, an active layer 12, and a second conductive type second cladding layer 17 having a ridge-shaped portion RD as a current narrowing structure are stacked on a substrate 10; wherein the ridge-shaped portion includes a first ridge-shaped layer 15 on the side close to said active layer and having a high bandgap and a second ridge-shaped layer 16 on the side distant from the active layer and having a low bandgap, so that the semiconductor light emitting device is obtained.

Abstract: A structure is provided with a first member at a base end side, a third member at a leading end side, a second member arranged between the first and third members, and a coupling force generator for generating a first coupling force for pressing an end surface of the first member and that of the second member against each other and a second coupling force for pressing an end surface of the second member and that of the third member against each other. In this structure, the first and third members are relatively displaced upon the application of an external force larger than a coupling force generated between the end surface of the first member and that of the second member by the first coupling force, whereas the second and third members are relatively displaced upon the application of an external force larger than a coupling force generated between the end surface of the second member and that of the first member by the second coupling force.

Abstract: It is aimed to provide a cooking assistance robot and a cooking assistance method capable of efficient mixing, with which ingredients are unlikely to be unevenly heated. A cooking assistance robot for cooking by physically moving ingredients in a cooking container selects a mixing direction for leveling a mountain and performs a mountain leveling operation in the selected mixing direction in the presence of a mountain of a specified height or higher in the cooking container.

Abstract: A semiconductor light emitting device made of nitride III-V compound semiconductors includes an active layer made of a first nitride III-V compound semiconductor containing In and Ga, such as InGaN; an intermediate layer made of a second nitride III-V compound semiconductor containing In and Ga and different from the first nitride III-V compound semiconductor, such as InGaN; and a cap layer made of a third nitride III-V compound semiconductor containing Al and Ga, such as p-type AlGaN, which are deposited in sequential contact.

Abstract: A semiconductor light emitting device made of nitride III-V compound semiconductors is includes an active layer made of a first nitride III-V compound semiconductor containing In and Ga, such as InGaN; an intermediate layer made of a second nitride III-V compound semiconductor containing In and Ga and different from the first nitride III-V compound semiconductor, such as InGaN; and a cap layer made of a third nitride III-V compound semiconductor containing Al and Ga, such as p-type AlGaN, which are deposited in sequential contact.

Abstract: A semiconductor light emitting device made of nitride III-V compound semiconductors includes an active layer made of a first nitride III-V compound semiconductor containing In and Ga, such as InGaN; an intermediate layer made of a second nitride III-V compound semiconductor containing In and Ga and different from the first nitride III-V compound semiconductor, such as InGaN; and a cap layer made of a third nitride III-V compound semiconductor containing Al and Ga, such as p-type AlGaN, which are deposited in sequential contact.

Abstract: When a semiconductor light emitting device or a semiconductor device is manufactured by growing nitride III-V compound semiconductor layers, which will form a light emitting device structure or a device structure, on a nitride III-V compound semiconductor substrate composed of a first region in form of a crystal having a first average dislocation density and a plurality of second regions having a second average dislocation density higher than the first average dislocation density and periodically aligned in the first region, device regions are defined on the nitride III-V compound semiconductor substrate such that the device regions do not substantially include second regions, emission regions or active regions of devices finally obtained do not include second regions.

Abstract: A radiation image capturing condition correction apparatus for use with a) an image-capturing unit which captures a radiation image of a predetermined imaging subject; and b) a radiation generating unit which generates radiation, said radiation image capturing condition correction apparatus comprising: a measuring unit which measures an amount of physical displacement of said radiation generating unit; and a position correction unit for generating a correction value which is used for correcting a position at which said image-capturing unit captures said radiation image.

Abstract: When a semiconductor light emitting device or a semiconductor device is manufactured by growing nitride III-V compound semiconductor layers, which will form a light emitting device structure or a device structure, on a nitride III-V compound semiconductor substrate composed of a first region in form of a crystal having a first average dislocation density and a plurality of second regions having a second average dislocation density higher than the first average dislocation density and periodically aligned in the first region, device regions are defined on the nitride III-V compound semiconductor substrate such that the device regions do not substantially include second regions, emission regions or active regions of devices finally obtained do not include second regions.

Abstract: To provide a semiconductor light emitting device capable of improving an aspect ratio of a laser beam to make it close to a circular shape and a method of producing the same, a first conductive type first cladding layer 11, an active layer 12, and a second conductive type second cladding layer 17 having a ridge-shaped portion RD as a current narrowing structure are stacked on a substrate 10; wherein the ridge-shaped portion includes a first ridge-shaped layer 15 on the side close to said active layer and having a high bandgap and a second ridge-shaped layer 16 on the side distant from the active layer and having a low bandgap, so that the semiconductor light emitting device is obtained.

Abstract: A multi-beam semiconductor laser device capable of emitting respective laser beams with uniform optical output levels and enabling easy alignment is provided. This multi-beam semiconductor laser device (40) is a GaN base multi-beam semiconductor laser device provided with four laser stripes (42A, 42B, 42C and 42D) which are capable of emitting laser beams with the same wavelength. The respective laser oscillating regions (42A to 42D) are provided with a p-type common electrode (48) on a mesa structure (46) which is formed on a sapphire substrate (44), and have active regions (50A, 50B, 50C and 50D) respectively. Two n-type electrodes (52A and 52B) are provided on an n-type GaN contact layer (54) and located as common electrodes opposite to the p-type common electrode (48) on both sides of the mesa structure (46). The distance A between the laser stripe (42A) and the laser stripe (42D) is no larger than 100 ?m.

Abstract: A semiconductor light emitting device made of nitride III-V compound semiconductors includes an active layer made of a first nitride III-V compound semiconductor containing In and Ga, such as InGaN; an intermediate layer made of a second nitride III-V compound semiconductor containing In and Ga and different from the first nitride III-V compound semiconductor, such as InGaN; and a cap layer made of a third nitride III-V compound semiconductor containing Al and Ga, such as p-type AlGaN, which are deposited in sequential contact.

Abstract: When a semiconductor light emitting device or a semiconductor device is manufactured by growing nitride III–V compound semiconductor layers, which will form a light emitting device structure or a device structure, on a nitride III–V compound semiconductor substrate composed of a first region in form of a crystal having a first average dislocation density and a plurality of second regions having a second average dislocation density higher than the first average dislocation density and periodically aligned in the first region, device regions are defined on the nitride III–V compound semiconductor substrate such that the device regions do not substantially include second regions, emission regions or active regions of devices finally obtained do not include second regions.

Abstract: A semiconductor laser includes semiconductor layers stacked on a substrate, and a pair of resonator end surfaces opposed to each other in the direction perpendicular to the stacking direction. In this semiconductor laser, a light emission side reflecting film is formed on one of the resonator end surfaces. A refractive index of the reflecting film against an emission wavelength of laser light is set to a value between an effective refractive index and a refractive index of the substrate. Another semiconductor laser includes a light emission function layer stack including a cladding layer and an active layer formed on one place of a translucent substrate; two electrodes having different polarities, which are provided on the light emission function layer stack side; and a light leakage preventive film formed on the other plane of the translucent substrate.

Abstract: In a multi-beam semiconductor laser including nitride III–V compound semiconductor layers stacked on one surface of a substrate of sapphire or other material to form laser structures, and including a plurality of anode electrodes and a plurality of cathode electrodes formed on the nitride III–V compound semiconductor layers, one of the anode electrodes is formed to bridge over one of the cathode electrodes via an insulating film, and another anode electrode is formed to bridge over another of the cathode electrodes via an insulating film.