Abstract: A playback apparatus for playing back video data includes a read section and a control section, a first content includes first information and the first video data, a second content includes second information and second video data recorded in a different format from a format of the first video data, the first information is a part of management information for third video data recorded in a different format from the format of the first video data, the second information is a part of management information for the second video data, the read section reads out the first information and the second information from the first content and the second content, respectively, and outputs the first information and the second information to the control section, and when the first information and the second information match, the control section plays back the first video data.

Abstract: Provided is a display data output apparatus for outputting a display image to be displayed on a screen. In order to reduce a time until the displayed image is displayed after input is received from a user, the display data output apparatus assigns priorities to a plurality of display objects that each have a possibility of being displayed subsequent to a current display state based on a predetermined assignment method, and sequentially generates a plurality of display data pieces according to the priorities. For example, the display data pieces are generated, starting from the one that requires a long time to be generated.

Abstract: A video processing method for selectively processing character information (Ic) included in an inputted video stream (Svc). The video stream (Svc) is separated in units of frame into a brightness frame (Y) representing brightness information (VY) and a plurality of color difference frames (Cb, Cr) representing color difference information (VCb, VCr). Character information (Ic) included according to at least either of the brightness information (VY) and the color difference information (VCb, VCr) is recognized. The recognized character information (Ic) is subjected to a processing by at least one of deletion, movement, and enlargement.

Abstract: In a DVD+VR recording method, when a VCPS (Video Content Protection System) title (204) recorded under protection of its copyright is recorded in a VCPS-incapable apparatus, a dummy title (203) having a protection attribute is provided immediately before the VCPS title, and information about the dummy title is included in title management information for VCPS-incapable apparatuses and information about the VCPS title is not included in the title management information for VCPS-incapable apparatuses. As a result, even when a user tries to perform overwriting from a deleted title immediately before a VCPS title in a VCPS-incapable apparatus, the recording is stopped as the dummy title has the protection attribute, whereby the VCPS title is prevented from being deleted.

Abstract: A video processing method for selectively processing character information (Ic) included in an inputted video stream (Svc). The video stream (Svc) is separated in units of frame into a brightness frame (Y) representing brightness information (VY) and a plurality of color difference frames (Cb, Cr) representing color difference information (VCb, VCr). Character information (Ic) included according to at least either of the brightness information (VY) and the color difference information (VCb, VCr) is recognized. The recognized character information (Ic) is subjected to a processing by at least one of deletion, movement, and enlargement.

Abstract: The invention relates to a photomask for use in a thermal flow process in which: a photomask is prepared in which a plurality of exposure openings are formed; a resist is applied to the surface of a layer of a semiconductor integrated circuit that is to undergo processing; this resist is patterned by an exposure process through the photomask to form a plurality of openings in the resist that correspond to each of the exposure openings; and the patterned resist is then heated to cause each of the openings to shrink; wherein at least a portion of exposure openings among the plurality of exposure openings are formed in shapes that compensate for anisotropic deformation that occurs in the openings when the patterned resist is heated to cause each of the openings to shrink. Since the openings that are formed in the resist are provided in advance with shapes that compensate for the deformation that occurs when the openings shrink, these openings attain the proper shape after undergoing shrinking and deformation.

Abstract: The invention relates to a photomask for use in a thermal flow process in which: a photomask is prepared in which a plurality of exposure openings are formed; a resist is applied to the surface of a layer of a semiconductor integrated circuit that is to undergo processing; this resist is patterned by an exposure process through the photomask to form a plurality of openings in the resist that correspond to each of the exposure openings; and the patterned resist is then heated to cause each of the openings to shrink; wherein at least a portion of exposure openings among the plurality of exposure openings are formed in shapes that compensate for anisotropic deformation that occurs in the openings when the patterned resist is heated to cause each of the openings to shrink. Since the openings that are formed in the resist are provided in advance with shapes that compensate for the deformation that occurs when the openings shrink, these openings attain the proper shape after undergoing shrinking and deformation.

Abstract: The invention relates to a photomask for use in a thermal flow process in which: a photomask is prepared in which a plurality of exposure openings are formed; a resist is applied to the surface of a layer of a semiconductor integrated circuit that is to undergo processing; this resist is patterned by an exposure process through the photomask to form a plurality of openings in the resist that correspond to each of the exposure openings; and the patterned resist is then heated to cause each of the openings to shrink; wherein at least a portion of exposure openings among the plurality of exposure openings are formed in shapes that compensate for anisotropic deformation that occurs in the openings when the patterned resist is heated to cause each of the openings to shrink. Since the openings that are formed in the resist are provided in advance with shapes that compensate for the deformation that occurs when the openings shrink, these openings attain the proper shape after undergoing shrinking and deformation.

Abstract: The invention relates to a photomask for use in a thermal flow process in which: a photomask is prepared in which a plurality of exposure openings are formed; a resist is applied to the surface of a layer of a semiconductor integrated circuit that is to undergo processing; this resist is patterned by an exposure process through the photomask to form a plurality of openings in the resist that correspond to each of the exposure openings; and the patterned resist is then heated to cause each of the openings to shrink; wherein at least a portion of exposure openings among the plurality of exposure openings are formed in shapes that compensate for anisotropic deformation that occurs in the openings when the patterned resist is heated to cause each of the openings to shrink. Since the openings that are formed in the resist are provided in advance with shapes that compensate for the deformation that occurs when the openings shrink, these openings attain the proper shape after undergoing shrinking and deformation.

Abstract: The invention relates to a photomask for use in a thermal flow process in which: a photomask is prepared in which a plurality of exposure openings are formed; a resist is applied to the surface of a layer of a semiconductor integrated circuit that is to undergo processing; this resist is patterned by an exposure process through the photomask to form a plurality of openings in the resist that correspond to each of the exposure openings; and the patterned resist is then heated to cause each of the openings to shrink; wherein at least a portion of exposure openings among the plurality of exposure openings are formed in shapes that compensate for anisotropic deformation that occurs in the openings when the patterned resist is heated to cause each of the openings to shrink. Since the openings that are formed in the resist are provided in advance with shapes that compensate for the deformation that occurs when the openings shrink, these openings attain the proper shape after undergoing shrinking and deformation.

Abstract: A method for forming a fine pattern on a chemical sensitization photoresist includes the consecutive steps of exposing a photoresist film with KrF excimer laser, developing the exposed photoresist film to form a photoresist pattern, separating protective group from the photoresist pattern, and heating the photoresist film to make the photoresist pattern to have a swelling property, thereby reshaping the openings in the photoresist pattern while reducing the size of the openings. The method achieves a finer pattern in a design rule of 0.30 to 0.18 &mgr;m without degradation of the shape.

Abstract: An antireflection film includes a base resin and an additive resin, the additive resin having a dry etching rate higher than that of the base resin. A photoresist pattern is formed and the antireflection film is selectively etched using the photoresist pattern as a mask. The molecular weight and weight percent of the additive resin are selected to provide an etching rate for the antireflection film that permits selective removal of the antireflection film while leaving an effective amount of the photoresist.