Patents by Inventor Tsvetan Ivanov

Tsvetan Ivanov has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11969629
    Abstract: A fitness device for training the whole body. The device has coaxially arranged one above the other tubular elements of the same diameter, and an inner body disposed in cavities defined by the tubular elements. At the base of the inner body is a drive motor, providing rotational movement of the lower tubular element and the part of the inner body disposed in its cavity, which transmits the rotational movement and of the part of the inner body disposed in the cavity, by a spindle, at least two obstacles with identical construction respectively lower and upper, each magnetically connected to a sliding means, respectively detachably connected to sliders and of the inner body and a cover.
    Type: Grant
    Filed: May 17, 2023
    Date of Patent: April 30, 2024
    Inventors: Georgi Ivanov Zaykov, Ivan Georgiev Zaykov, Tsvetan Georgiev Zaykov
  • Publication number: 20230211746
    Abstract: A method and system for detecting a vehicle impact and automatically requesting emergency assistance is provided. The system comprises multiple impact sensors located on the vehicle. The impact sensors are configured to communicate with each other as well as with a main control unit.
    Type: Application
    Filed: January 3, 2023
    Publication date: July 6, 2023
    Inventor: Tsvetan Ivanov Delev
  • Patent number: 9691872
    Abstract: A semiconductor structure comprises a substrate including a III-V material, and a high-k interfacial layer overlaying the substrate. The interfacial layer includes a rare earth aluminate. The present disclosure also relates to an n-type FET device comprising the same, and a method for manufacturing the same.
    Type: Grant
    Filed: July 25, 2014
    Date of Patent: June 27, 2017
    Assignees: IMEC VZW, Katholieke Universiteit Leuven, KU Leuven R&D
    Inventors: Han Chung Lin, Laura Nyns, Tsvetan Ivanov, Dennis Van Dorp
  • Publication number: 20150028428
    Abstract: A semiconductor structure comprises a substrate including a III-V material, and a high-k interfacial layer overlaying the substrate. The interfacial layer includes a rare earth aluminate. The present disclosure also relates to an n-type FET device comprising the same, and a method for manufacturing the same.
    Type: Application
    Filed: July 25, 2014
    Publication date: January 29, 2015
    Applicants: KATHOLIEKE UNIVERSITEIT LEUVEN, KU LEUVEN R&D, IMEC VZW
    Inventors: Han Chung Lin, Laura Nyns, Tsvetan Ivanov, Dennis Van Dorp