Patents by Inventor Tsvetanka S. Zheleva

Tsvetanka S. Zheleva has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • PHENOTYPE-NEUTRAL BARCODES FOR DIGITAL ANALYSIS
    Publication number: 20150225770
    Abstract: Processes of specifically and effectively labeling an organism are provided. Processes involve the incorporation of a plurality of phenotype neutral tags that are differentially detected where the presence or absence of the tag is represented by a digital readout. The incorporation of stealth tags or insertion tags provides a rapid and population maintaining labeling of an organism that can be readily identified by digital PCR techniques.
    Type: Application
    Filed: February 12, 2014
    Publication date: August 13, 2015
    Applicant: U.S. Army Research Laboratory ATTN: RDRL-LOC-I
    Inventors: Dontcho V. Jelev, Henry S. Gibbons, Tsvetanka S. Zheleva
  • LOW-DEFECT DENSITY GALLIUM NITRIDE SEMICONDUCTOR STRUCTURES AND FABRICATION METHODS
    Publication number: 20130207119
    Abstract: A low-defect gallium nitride structure including a first gallium nitride layer comprising a plurality of gallium nitride columns etched into the first gallium nitride layer and a first dislocation density; and a second gallium nitride layer that extends over the gallium nitride columns and comprises a second dislocation density, wherein the second dislocation density may be lower than the first dislocation density. In addition, a method for fabricating a gallium nitride semiconductor layer that includes masking an underlying gallium nitride layer with a mask that comprises an array of columns and growing the underlying gallium nitride layer through the columns and onto said mask using metal-organic chemical vapor deposition pendeo-epitaxy to thereby form a pendeo-epitaxial gallium nitride layer coalesced on said mask to form a continuous pendeo-epitaxial monocrystalline gallium nitride semiconductor layer.
    Type: Application
    Filed: August 7, 2012
    Publication date: August 15, 2013
    Applicant: The Government of the United States as Represented by the Secretary of the Army
    Inventors: Tsvetanka S. Zheleva, Pankaj B. Shah, Michael A. Derenge
  • Low-defect density gallium nitride semiconductor structures and fabrication methods
    Patent number: 8314016
    Abstract: A low-defect gallium nitride structure including a first gallium nitride layer comprising a plurality of gallium nitride columns etched into the first gallium nitride layer and a first dislocation density; and a second gallium nitride layer that extends over the gallium nitride columns and comprises a second dislocation density, wherein the second dislocation density may be lower than the first dislocation density. In addition, a method for fabricating a gallium nitride semiconductor layer that includes masking an underlying gallium nitride layer with a mask that comprises an array of columns and growing the underlying gallium nitride layer through the columns and onto said mask using metal-organic chemical vapor deposition pendeo-epitaxy to thereby form a pendeo-epitaxial gallium nitride layer coalesced on said mask to form a continuous pendeo-epitaxial monocrystalline gallium nitride semiconductor layer.
    Type: Grant
    Filed: June 19, 2009
    Date of Patent: November 20, 2012
    Assignee: The United States of America as represented by the Secretary of the Army
    Inventors: Tsvetanka S. Zheleva, Pankaj B. Shah, Michael A. Derenge, Daniel J. Ewing
  • Low-defect density gallium nitride semiconductor structures and fabrication methods
    Publication number: 20100171124
    Abstract: A low-defect gallium nitride structure including a first gallium nitride layer comprising a plurality of gallium nitride columns etched into the first gallium nitride layer and a first dislocation density; and a second gallium nitride layer that extends over the gallium nitride columns and comprises a second dislocation density, wherein the second dislocation density may be lower than the first dislocation density. In addition, a method for fabricating a gallium nitride semiconductor layer that includes masking an underlying gallium nitride layer with a mask that comprises an array of columns and growing the underlying gallium nitride layer through the columns and onto said mask using metal-organic chemical vapor deposition pendeo-epitaxy to thereby form a pendeo-epitaxial gallium nitride layer coalesced on said mask to form a continuous pendeo-epitaxial monocrystalline gallium nitride semiconductor layer.
    Type: Application
    Filed: June 19, 2009
    Publication date: July 8, 2010
    Applicant: The United States of America as represented by the Secretary of the Army
    Inventors: Tsvetanka S. Zheleva, Pankaj B. Shah, Michael A. Derenge, Daniel J. Ewing