Patents by Inventor Tsz W. Chan
Tsz W. Chan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 11672191Abstract: A memory cell comprising a threshold switching material over a first electrode on a substrate. The memory cell includes a second electrode over the threshold switching material and at least one dielectric material between the threshold switching material and at least one of the first electrode and the second electrode. A memory material overlies the second electrode. The dielectric material may directly contact the threshold switching material and each of the first electrode and the second electrode. Memory cells including only one dielectric material between the threshold switching material and an electrode are disclosed. A memory device including the memory cells and methods of forming the memory cells are also described.Type: GrantFiled: January 29, 2021Date of Patent: June 6, 2023Assignee: Micron Technology, Inc.Inventors: Tsz W. Chan, D. V. Nirmal Ramaswamy, Qian Tao, Yongjun J. Hu, Everett A. McTeer
-
Publication number: 20210151676Abstract: A memory cell comprising a threshold switching material over a first electrode on a substrate. The memory cell includes a second electrode over the threshold switching material and at least one dielectric material between the threshold switching material and at least one of the first electrode and the second electrode. A memory material overlies the second electrode. The dielectric material may directly contact the threshold switching material and each of the first electrode and the second electrode. Memory cells including only one dielectric material between the threshold switching material and an electrode are disclosed. A memory device including the memory cells and methods of forming the memory cells are also described.Type: ApplicationFiled: January 29, 2021Publication date: May 20, 2021Inventors: Tsz W. Chan, D. V. Nirmal Ramaswamy, Qian Tao, Yongjun J. Hu, Everett A. McTeer
-
Patent number: 10923657Abstract: A memory cell comprising a threshold switching material over a first electrode on a substrate. The memory cell includes a second electrode over the threshold switching material and at least one dielectric material between the threshold switching material and at least one of the first electrode and the second electrode. A memory material overlies the second electrode. The dielectric material may directly contact the threshold switching material and each of the first electrode and the second electrode. Memory cells including only one dielectric material between the threshold switching material and an electrode are disclosed. A memory device including the memory cells and methods of forming the memory cells are also described.Type: GrantFiled: July 24, 2019Date of Patent: February 16, 2021Assignee: Micron Technology, Inc.Inventors: Tsz W. Chan, Durai Vishak Nirmal Ramaswamy, Qian Tao, Yongjun Jeff Hu, Everett A. McTeer
-
Patent number: 10720574Abstract: Memory devices and methods for fabricating memory devices have been disclosed. One such method includes forming the memory stack out of a plurality of elements. An adhesion species is formed on at least one sidewall of the memory stack wherein the adhesion species has a gradient structure that results in the adhesion species intermixing with an element of the memory stack to terminate unsatisfied atomic bonds of the element. The gradient structure further comprises a film of the adhesion species on an outer surface of the at least one sidewall. A dielectric material is implanted into the film of the adhesion species to form a sidewall liner.Type: GrantFiled: February 4, 2019Date of Patent: July 21, 2020Assignee: Micron Technology, Inc.Inventors: Tsz W. Chan, Yongjun Jeff Hu, Swapnil Lengade, Shu Qin, Everett Allen McTeer
-
Patent number: 10692572Abstract: Memory devices and methods for fabricating memory devices have been disclosed. One such method includes forming a memory stack out of a plurality of elements. A sidewall liner is formed on a sidewall of the memory stack using a physical vapor deposition (PVD) process, including an adhesion species and a dielectric, such that the adhesion species intermixes with an element of the memory stack to terminate unsatisfied atomic bonds of the element and the dielectric forms a dielectric film with the adhesive species on the sidewall.Type: GrantFiled: May 20, 2019Date of Patent: June 23, 2020Assignee: Micron Technology, Inc.Inventors: Yongjun Jeff Hu, Tsz W. Chan, Christopher W. Petz, Everett Allen McTeer
-
Patent number: 10546895Abstract: Memory devices and methods for fabricating memory devices have been disclosed. One such memory device includes a first electrode material formed on a word line material. A selector device material is formed on the first electrode material. A second electrode material is formed on the selector device material. A phase change material is formed on the second electrode material. A third electrode material is formed on the phase change material. An adhesion species is plasma doped into sidewalls of the memory stack and a liner material is formed on the sidewalls of the memory stack. The adhesion species intermixes with an element of the memory stack and the sidewall liner to terminate unsatisfied atomic bonds of the element and the sidewall liner.Type: GrantFiled: January 7, 2019Date of Patent: January 28, 2020Assignee: Micron Technology, Inc.Inventors: Yongjun Jeff Hu, Tsz W. Chan, Swapnil Lengade, Everett Allen McTeer, Shu Qin
-
Publication number: 20190362785Abstract: Memory devices and methods for fabricating memory devices have been disclosed. One such method includes forming a memory stack out of a plurality of elements. A sidewall liner is formed on a sidewall of the memory stack using a physical vapor deposition (PVD) process, including an adhesion species and a dielectric, such that the adhesion species intermixes with an element of the memory stack to terminate unsatisfied atomic bonds of the element and the dielectric forms a dielectric film with the adhesive species on the sidewall.Type: ApplicationFiled: May 20, 2019Publication date: November 28, 2019Inventors: Yongjun Jeff Hu, Tsz W. Chan, Christopher W. Petz, Everett Allen McTeer
-
Publication number: 20190355902Abstract: Memory devices and methods for fabricating memory devices have been disclosed. One such method includes forming the memory stack out of a plurality of elements. An adhesion species is formed on at least one sidewall of the memory stack wherein the adhesion species has a gradient structure that results in the adhesion species intermixing with an element of the memory stack to terminate unsatisfied atomic bonds of the element. The gradient structure further comprises a film of the adhesion species on an outer surface of the at least one sidewall. A dielectric material is implanted into the film of the adhesion species to form a sidewall liner.Type: ApplicationFiled: February 4, 2019Publication date: November 21, 2019Inventors: Tsz W. Chan, Yongjun Jeff Hu, Swapnil Lengade, Shu Qin, Everett Allen McTeer
-
Publication number: 20190348603Abstract: A memory cell comprising a threshold switching material over a first electrode on a substrate. The memory cell includes a second electrode over the threshold switching material and at least one dielectric material between the threshold switching material and at least one of the first electrode and the second electrode. A memory material overlies the second electrode. The dielectric material may directly contact the threshold switching material and each of the first electrode and the second electrode. Memory cells including only one dielectric material between the threshold switching material and an electrode are disclosed. A memory device including the memory cells and methods of forming the memory cells are also described.Type: ApplicationFiled: July 24, 2019Publication date: November 14, 2019Inventors: Tsz W. Chan, Durai Vishak Nirmal Ramaswamy, Qian Tao, Yongjun Jeff Hu, Everett A. McTeer
-
Patent number: 10418554Abstract: A memory cell comprising a threshold switching material over a first electrode on a substrate. The memory cell includes a second electrode over the threshold switching material and at least one dielectric material between the threshold switching material and at least one of the first electrode and the second electrode. A memory material overlies the second electrode. The dielectric material may directly contact the threshold switching material and each of the first electrode and the second electrode. Memory cells including only one dielectric material between the threshold switching material and an electrode are disclosed. A memory device including the memory cells and methods of forming the memory cells are also described.Type: GrantFiled: October 26, 2018Date of Patent: September 17, 2019Assignee: Micron Technology, Inc.Inventors: Tsz W. Chan, D. V. Nirmal Ramaswamy, Qian Tao, Yongjun Jeff Hu, Everett A. McTeer
-
Patent number: 10381072Abstract: Memory devices and methods for fabricating memory devices have been disclosed. One such method includes forming a memory stack out of a plurality of elements. A sidewall liner is formed on a sidewall of the memory stack using a physical vapor deposition (PVD) process, including an adhesion species and a dielectric, such that the adhesion species intermixes with an element of the memory stack to terminate unsatisfied atomic bonds of the element and the dielectric forms a dielectric film with the adhesive species on the sidewall.Type: GrantFiled: April 30, 2014Date of Patent: August 13, 2019Assignee: Micron Technology, Inc.Inventors: Yongjun Jeff Hu, Tsz W. Chan, Christopher W. Petz, Everett Allen McTeer
-
Patent number: 10325653Abstract: Memory devices and methods for fabricating memory devices have been disclosed. One such method includes forming a memory stack out of a plurality of elements. A sidewall liner is formed on a sidewall of the memory stack using a physical vapor deposition (PVD) process, including an adhesion species and a dielectric, such that the adhesion species intermixes with an element of the memory stack to terminate unsatisfied atomic bonds of the element and the dielectric forms a dielectric film with the adhesive species on the sidewall.Type: GrantFiled: December 28, 2017Date of Patent: June 18, 2019Assignee: Micron Technology, Inc.Inventors: Yongjun Jeff Hu, Tsz W. Chan, Christopher W. Petz, Everett Allen McTeer
-
Publication number: 20190140023Abstract: Memory devices and methods for fabricating memory devices have been disclosed. One such memory device includes a first electrode material formed on a word line material. A selector device material is formed on the first electrode material. A second electrode material is formed on the selector device material. A phase change material is formed on the second electrode material. A third electrode material is formed on the phase change material. An adhesion species is plasma doped into sidewalls of the memory stack and a liner material is formed on the sidewalls of the memory stack. The adhesion species intermixes with an element of the memory stack and the sidewall liner to terminate unsatisfied atomic bonds of the element and the sidewall liner.Type: ApplicationFiled: January 7, 2019Publication date: May 9, 2019Inventors: Yongjun Jeff Hu, Tsz W. Chan, Swapnil Lengade, Everett Allen McTeer, Shu Qin
-
Publication number: 20190088867Abstract: Memory devices and methods for fabricating memory devices have been disclosed. One such method includes forming the memory stack out of a plurality of elements. An adhesion species is formed on at least one sidewall of the memory stack wherein the adhesion species has a gradient structure that results in the adhesion species intermixing with an element of the memory stack to terminate unsatisfied atomic bonds of the element. The gradient structure further comprises a film of the adhesion species on an outer surface of the at least one sidewall.Type: ApplicationFiled: January 29, 2018Publication date: March 21, 2019Inventors: Tsz W. Chan, Yongjun Jeff Hu, Swapnil Lengade, Shu Qin, Everett Allen McTeer
-
Patent number: 10224479Abstract: Memory devices and methods for fabricating memory devices have been disclosed. One such method includes forming the memory stack out of a plurality of elements. An adhesion species is formed on at least one sidewall of the memory stack wherein the adhesion species has a gradient structure that results in the adhesion species intermixing with an element of the memory stack to terminate unsatisfied atomic bonds of the element. The gradient structure further comprises a film of the adhesion species on an outer surface of the at least one sidewall. A dielectric material is implanted into the film of the adhesion species to form a sidewall liner.Type: GrantFiled: January 29, 2018Date of Patent: March 5, 2019Assignee: Micron Technology, Inc.Inventors: Tsz W. Chan, Yongjun Jeff Hu, Swapnil Lengade, Shu Qin, Everett Allen McTeer
-
Publication number: 20190067573Abstract: A memory cell comprising a threshold switching material over a first electrode on a substrate. The memory cell includes a second electrode over the threshold switching material and at least one dielectric material between the threshold switching material and at least one of the first electrode and the second electrode. A memory material overlies the second electrode. The dielectric material may directly contact the threshold switching material and each of the first electrode and the second electrode. Memory cells including only one dielectric material between the threshold switching material and an electrode are disclosed. A memory device including the memory cells and methods of forming the memory cells are also described.Type: ApplicationFiled: October 26, 2018Publication date: February 28, 2019Inventors: Tsz W. Chan, D. V. Nirmal Ramaswamy, Qian Tao, Yongjun Jeff Hu, Everett A. McTeer
-
Patent number: 10193064Abstract: A memory cell comprising a threshold switching material over a first electrode on a substrate. The memory cell includes a second electrode over the threshold switching material and at least one dielectric material between the threshold switching material and at least one of the first electrode and the second electrode. A memory material overlies the second electrode. The dielectric material may directly contact the threshold switching material and each of the first electrode and the second electrode. Memory cells including only one dielectric material between the threshold switching material and an electrode are disclosed. A memory device including the memory cells and methods of forming the memory cells are also described.Type: GrantFiled: July 6, 2017Date of Patent: January 29, 2019Assignee: Micron Technology, Inc.Inventors: Tsz W. Chan, D. V. Nirmal Ramaswamy, Qian Tao, Yongjun Jeff Hu, Everett A. McTeer
-
Patent number: 10177198Abstract: Memory devices and methods for fabricating memory devices have been disclosed. One such memory device includes a first electrode material formed on a word line material. A selector device material is formed on the first electrode material. A second electrode material is formed on the selector device material. A phase change material is formed on the second electrode material. A third electrode material is formed on the phase change material. An adhesion species is plasma doped into sidewalls of the memory stack and a liner material is formed on the sidewalls of the memory stack. The adhesion species intermixes with an element of the memory stack and the sidewall liner to terminate unsatisfied atomic bonds of the element and the sidewall liner.Type: GrantFiled: June 5, 2017Date of Patent: January 8, 2019Assignee: Micron Technology, Inc.Inventors: Yongjun Jeff Hu, Tsz W. Chan, Swapnil Lengade, Everett Allen McTeer, Shu Qin
-
Patent number: 10079340Abstract: Memory devices and methods for fabricating memory devices have been disclosed. One such method includes forming the memory stack out of a plurality of elements. An adhesion species is formed on at least one sidewall of the memory stack wherein the adhesion species has a gradient structure that results in the adhesion species intermixing with an element of the memory stack to terminate unsatisfied atomic bonds of the element. The gradient structure further comprises a film of the adhesion species on an outer surface of the at least one sidewall. A dielectric material is implanted into the film of the adhesion species to form a sidewall liner.Type: GrantFiled: April 4, 2016Date of Patent: September 18, 2018Assignee: Micron Technology, Inc.Inventors: Tsz W. Chan, Yongjun Jeff Hu, Swapnil Lengade, Shu Qin, Everett Allen McTeer
-
Publication number: 20180166629Abstract: Memory devices and methods for fabricating memory devices have been disclosed. One such method includes forming the memory stack out of a plurality of elements. An adhesion species is formed on at least one sidewall of the memory stack wherein the adhesion species has a gradient structure that results in the adhesion species intermixing with an element of the memory stack to terminate unsatisfied atomic bonds of the element. The gradient structure further comprises a film of the adhesion species on an outer surface of the at least one sidewall.Type: ApplicationFiled: January 29, 2018Publication date: June 14, 2018Inventors: Tsz W. Chan, Yongjun Jeff Hu, Swapnil Lengade, Shu Qin, Everett Allen McTeer