Abstract: A cathodal material for lithium cells comprises a porous lithium oxide microparticle is provided. The porous lithium oxide microparticle comprises a plurality of porous lithium oxide nanoparticles formed with a first conductive layer therein, a pore defined by connecting the lithium oxide nanoparticles, a second conductive layer covering at least a surface of one of the lithium oxide nanoparticles contacting the first conductive layer and forming a three-dimensional conductive network between the lithium oxide nanoparticles, and a conductive fiber connecting with the second conductive layer.

Abstract: The invention utilizes a carbon nano material to nanotize a magnesium-based hydrogen storage material, thereby forming single or multiple crystals to enhance the surface to volume ratio and hydrogen diffusion channel of the magnesium-based hydrogen storage material. Therefore, the hydrogen storage material has higher hydrogen storage capability, higher absorption/desorption rate, and lower absorption/desorption temperature.

Abstract: The invention utilizes a carbon nano material to nanotize a magnesium-based hydrogen storage material, thereby forming single or multiple crystals to enhance the surface to volume ratio and hydrogen diffusion channel of the magnesium-based hydrogen storage material. Therefore, the hydrogen storage material has higher hydrogen storage capability, higher absorption/desorption rate, and lower absorption/desorption temperature.

Abstract: A cathodal material for lithium cells comprises a porous lithium oxide microparticle is provided. The porous lithium oxide microparticle comprises a plurality of porous lithium oxide nanoparticles formed with a first conductive layer therein, a pore defined by connecting the lithium oxide nanoparticles, a second conductive layer covering at least a surface of one of the lithium oxide nanoparticles contacting the first conductive layer and forming a three-dimensional conductive network between the lithium oxide nanoparticles, and a conductive fiber connecting with the second conductive layer.

Abstract: A memory structure including a semiconductor substrate, an insulator layer formed on the semiconductor substrate and a gate layer formed on the insulator layer is disclosed. The insulator layer includes a first nanocrystal implanted region proximate to the gate layer and a second nanocrystal implanted region proximate to the semiconductor substrate, wherein the first nanocrystal implanted region has an average nanocrystal concentration which is higher than an average nanocrystal concentration of the second nanocrystal implanted region.

Abstract: A secondary battery includes a positive electrode, a negative electrode, and an isolation film and an electrolytic solution provided between the positive electrode and the negative electrode. The positive electrode includes a positive electrode active substance coated with a modified layer to enhance a wettability between the positive electrode and the electrolytic solution so as to improve the low temperature operation feature of the secondary battery. In addition, the content of solvents of low boiling point, low firing point and low viscosity in the electrolytic solution can be greatly reduced to improve the safety of the secondary battery.

Abstract: A magnetic medium having at least two intermediate layers between an underlayer and a magnetic layer. The first intermediate layer is designed to provide a good lattice match to the underlayer, while the second intermediate layer is designed to provide a good lattice match to the magnetic layer. Typically, the underlayer has one structure, such as body centered cube, while the magnetic layer has a second structure such as hexagonal close pack. In preferred embodiments, the transition from the one structure to the other structure occurs in the intermediate layers. For example, the first intermediate layer may be a hexagonal close pack structure. Because of the mismatch between the underlayer and the first layer, there may be crystal defects in this first intermediate layer. However, any remaining stress and mismatch is absorbed through the second layer, so that the second layer presents a substantially defect-free surface on which the magnetic layer may grow.

Abstract: In this invention, an ultra thin layer of CoCr alloy nucleation layer is sputtered at an extremely low deposition rate above a predominantly (200) oriented Cr film followed by a CoCrPt based alloy sputtered film at higher rates and moderate temperatures. This structure creates a media which has very high Hc, and excellent PW50, low noise and excellent low TNLD values. By using this technique, the CoCrPt magnetic film achieves excellent in-plane crystallographic orientation, and high Hc is achieved with minimal amount of Pt addition to the magnetic film. The method allows very fine grain structure of cobalt to be formed which contributes to good signal to noise ratio. A fine grain structure combined with chromium segregation between the grains improve the signal to noise ratio even more. A high degree of in-plane c-axis orientation is achieved in the cobalt layer which provides very high hysteresis loop squareness which helps to improve the OW and TNLD.

Abstract: A method for improving corrosion resistance while maximizing magnetic performance of a magnetic disk employed in data storage applications. The invention includes providing a substrate and forming a first layer above the substrate, the first layer having a first degree of abrasion resistance. The invention includes forming a second layer such as a Ni-containing layer above the first layer, the Ni-containing layer having a second degree of abrasion resistance lower than the first degree of abrasion resistance. The invention further includes forming grooves in the Ni-containing layer.

Abstract: A method for texturing a substrate and the resulting substrate. A substrate made of glass ceramic is textured using laser radiation to form a texture feature. The laser radiation may be applied with a degree of overlap. Additionally, the texture feature may be elongated or continuous in the circumferential direction. The radiation is applied such that the texture feature has smaller texture features formed thereon.

Abstract: A method of manufacturing a magnetic disk includes the steps of depositing a sublayer, a Cr layer and a Co based magnetic layer on a substrate. The sublayer causes the Cr crystals to avoid growing with a predominantly (200) orientation. Because of this the magnetic layer will be isotropic in the film plane and independent of any texture or scratch marks in the substrate.

Abstract: In this invention, an ultra thin layer of CoCr alloy nucleation layer is sputtered at an extremely low deposition rate above a predominantly (200) oriented Cr film followed by a CoCrPt based alloy sputtered film at higher rates and moderate temperatures. This structure creates a media which has very high Hc, and excellent PW50, low noise and excellent low TNLD values. By using this technique, the CoCrPt magnetic film achieves excellent in-plane crystallographic orientation, and high Hc is achieved with minimal amount of Pt addition to the magnetic film. The method allows very fine grain structure of cobalt to be formed which contributes to good signal to noise ratio. A fine grain structure combined with chromium segregation between the grains improve the signal to noise ratio even more. A high degree of in-plane c-axis orientation is achieved in the cobalt layer which provides very high hysteresis loop squareness which helps to improve the OW and TNLD.

Abstract: Sputtering method for producing amorphous hydrogenated carbon thin films with high sp.sup.3 content. By sputtering the carbon with a pulsed DC power supply having high voltage peaks, a carbon film with remarkably high sp.sup.3 bonding fraction can be obtained. Previously, carbon films with a very high sp.sup.3 fraction film with content as high (e.g. as 80%) could only be produced by methods such as filtered cathodic arc deposition or chemical vapor deposition methods (CVD) such as plasma-enhanced chemical vapor deposition (PE-CVD) and ion-beam deposition operating at some narrowly defined range of deposition conditions. It is very advantageous to use sputtering to create a high sp.sup.3 content film, since sputtering is more manufacturable and has higher productivity compared to CVD or ion-beam deposition methods. The resultant carbon film has excellent durability and corrosion resistance capability down to very low thickness.

Abstract: A method for texturing a glass ceramic substrate comprising the steps of applying a laser pulse to the substrate such that a portion of said substrate is heated to a temperature higher than the glass transition temperature of the glass phase of said substrate but lower than the melting point of the crystal phase of said substrate.

Abstract: A Co--Pt based magnetic alloy which has been doped with a relatively high amount of nitrogen, e.g., at or above 1 at. % is obtained having high coercivity, for example in the range of 1400 Oe or above, and an increased signal-to-noise ratio as compared to the same Co--Pt based alloy which has not been doped with nitrogen. The alloy is vacuum deposited, for example, by sputtering, and the nitrogen may be introduced from the sputtering gas or from the sputtering target. Other low-solubility elements providing the grain uniformity and isolation include: B, P, S, C, Si, As, Se and Te.

Abstract: A Co--Pt based magnetic alloy which has been sputtered with an oxide or nitride of a primary constituent of the magnetic layer, e.g., CoO below about 10 at. %, provides improved coercivity, squareness, and reduced noise as compared to magnetic alloys with oxygen introduced by other methods. The alloy is vacuum deposited, for example, by sputtering, and the oxide or nitride may be introduced from the sputtering target from which the magnetic layer materials come or from a separate sputtering target. Examples of such oxides and nitrides include CoO, Co.sub.2 0.sub.3, Co.sub.3 O.sub.4, CrO.sub.2, Cr.sub.2 O.sub.3, TiO.sub.2, Ta.sub.2 O.sub.5, Al.sub.2 O.sub.3, WO, CoN, Co.sub.2 N, TiN, TaN, CrN, NiN, etc.

Abstract: A new magnetic alloy exhibits high Hc and Ms while exhibiting excellent corrosion resistance, thereby providing ideal physical properties for high density recording applications. Other parameters of the media, such as SNR, PW50, and S are at least maintained, if not also improved. The alloy contains cobalt and up to 10 at. % Ni, up to 20 at. % Pt, up to 10 at. % Ta, up to 10 at. % Ti, and optionally up to 6 at. % B. The ratio of the tantalum to titanium in the alloy is between 3:1 and 1:3. The alloy is deposited by vacuum deposition (typically sputtering) on a similarly deposited non-magnetic alloy under layer. Nitrogen and/or oxygen may be introduced into the alloy during deposition to improve SNR. Other corrosion-resistant thin film alloys may also be obtained by the inclusion of Ta and Ti.

Abstract: A Co--Pt based magnetic alloy which has been doped with a relatively high amount of nitrogen, e.g., at or above 1 at. % is obtained having high coercivity, for example in the range of 1400 Oe or above, and an increased signal-to-noise ratio as compared to the same Co--Pt based alloy which has not been doped with nitrogen. The alloy is vacuum deposited, for example, by sputtering, and the nitrogen may be introduced from the sputtering gas or from the sputtering target. Other low-solubility elements providing the grain uniformity and isolation include: B, P, S, C, Si, As, Se and Te.

Abstract: A Co-Pt based magnetic alloy which has been doped with a relatively high amount of nitrogen, e.g., or above 1 at. % is obtained having high coercivity, for example in the range of 1400 Oe or above, and an increased signal-to-noise ratio as compared to the same Co-Pt based alloy which has not been doped with nitrogen. The alloy is vacuum deposited, for example, by sputtering, and the nitrogen may be introduced from the sputtering gas or from the sputtering target.

Abstract: A Co-Pt based magnetic alloy which has been doped with a relatively high amount of nitrogen, e.g., or above 1 at. % is obtained having high coercivity, for example in the range of 1400 Oe or above, and an increased signal-to-noise ratio as compared to the same Co-Pt based alloy which has not been doped with nitrogen. The alloy is vacuum deposited, for example, by sputtering, and the nitrogen may be introduced from the sputtering gas or from the sputtering target. Other low-solubility elements providing the grain uniformity and isolation include: B, P, S, C, Si, As, Se and Te.