Abstract: A semiconductor structure includes a buffer layer, a channel layer, a barrier layer, a doped compound semiconductor layer, and a composition gradient layer. The buffer layer is disposed on a substrate, the channel layer is disposed on the buffer layer, the barrier layer is disposed on the channel layer, the doped compound semiconductor layer is disposed on the barrier layer, and the composition gradient layer is disposed between the barrier layer and the doped compound semiconductor layer. The barrier layer and the composition gradient layer include a same group III element and a same group V element, and the atomic percentage of the same group III element in the composition gradient layer is gradually increased in the direction from the barrier layer to the doped compound semiconductor layer. A high electron mobility transistor and a fabrication method thereof are also provided.

Abstract: A semiconductor structure includes a nucleation layer disposed on a substrate, an epitaxial growth layer disposed above the nucleation layer, and a superlattice structure disposed between the nucleation layer and the epitaxial growth layer. The superlattice structure includes a plurality of alternately stacked superlattice units, and adjacent two superlattice units include a first superlattice unit and a second superlattice unit. The first superlattice unit includes a first superlattice layer and a second superlattice layer stacked thereon, the second superlattice unit includes a third superlattice layer and a fourth superlattice layer stacked thereon, where each of the first, second, third and fourth superlattice layers includes a plurality of pairs of two sublayers with different compositions from each other.

Abstract: A semiconductor structure includes a substrate, a buffer layer, a channel layer, a barrier layer, a doped compound semiconductor layer, and a composite blocking layer. The buffer layer is on the substrate. The channel layer is on the buffer layer. The barrier layer is on the channel layer. The doped compound semiconductor layer is on the barrier layer. The composite blocking layer is on the doped compound semiconductor layer, the composite blocking layer and the barrier layer include the same Group III element, and the atomic percent of the same Group III element in the composite blocking layer increases with the distance from the doped compound semiconductor layer.

Abstract: A video processing system including a video processing apparatus (VPA) including: a housing having a top wall with a top wall periphery, a top surface extending to the top wall periphery, and a central area; an input port adapted to receive video input signals from a videoscope; an output connector adapted to transmit video output signals; and a bracket interface supported by the housing and adapted to support a support bracket including a first retention feature, bracket interface located within the central area of the top wall and comprising a bracket base receptacle and a second retention feature, the bracket base receptacle sized and shaped to receive a base end of the support bracket, and the second retention feature sized and shaped to cooperate with the first retention feature to removably retain the base end of the support bracket.

Abstract: A semiconductor structure includes a buffer layer, a channel layer, a barrier layer, a doped compound semiconductor layer, and a composition gradient layer. The buffer layer is disposed on a substrate, the channel layer is disposed on the buffer layer, the barrier layer is disposed on the channel layer, the doped compound semiconductor layer is disposed on the barrier layer, and the composition gradient layer is disposed between the barrier layer and the doped compound semiconductor layer. The barrier layer and the composition gradient layer include a same group III element and a same group V element, and the atomic percentage of the same group III element in the composition gradient layer is gradually increased in the direction from the barrier layer to the doped compound semiconductor layer. A high electron mobility transistor and a fabrication method thereof are also provided.

Abstract: A video processing system including a video processing apparatus (VPA) including: a housing having a top wall with a top wall periphery, a top surface extending to the top wall periphery, and a central area; an input port adapted to receive video input signals from a videoscope; an output connector adapted to transmit video output signals; and a bracket interface supported by the housing and adapted to support a support bracket including a first retention feature, bracket interface located within the central area of the top wall and comprising a bracket base receptacle and a second retention feature, the bracket base receptacle sized and shaped to receive a base end of the support bracket, and the second retention feature sized and shaped to cooperate with the first retention feature to removably retain the base end of the support bracket.

Abstract: A video processing system including a video processing apparatus (VPA) including: a housing having a top wall with a top wall periphery, a top surface extending to the top wall periphery, and a central area; an input port adapted to receive video input signals from a videoscope; an output connector adapted to transmit video output signals; and a bracket interface supported by the housing and adapted to support a support bracket including a first retention feature, bracket interface located within the central area of the top wall and comprising a bracket base receptacle and a second retention feature, the bracket base receptacle sized and shaped to receive a base end of the support bracket, and the second retention feature sized and shaped to cooperate with the first retention feature to removably retain the base end of the support bracket.

Abstract: A high electron mobility transistor device includes a substrate, a plurality of pairs of alternating layers, at least one stress-relief layer and a gallium nitride layer. The plurality of pairs of alternating layers is disposed over the substrate, and each pair of alternating layers includes a carbon-doped gallium nitride layer and an undoped gallium nitride layer. The stress-relief layer is disposed between the pairs of alternating layers. The gallium nitride layer is disposed over the alternating layers.

Abstract: A high electron mobility transistor device includes a substrate, a superlattice buffer layer, a gradient buffer layer and a channel layer. The superlattice buffer layer are disposed over the substrate, wherein the superlattice buffer layer includes a plurality of sets of alternating layers, and each set of alternating layers includes at least one AlN layer and at least one AlxGa(1-x)N layer alternately arranged, wherein 0?x<1. The gradient buffer layer is disposed over the substrate, wherein the gradient buffer layer includes a plurality of AlyGa(1-y)N layers, wherein 0?y<1. The channel layer is disposed over the gradient buffer layer.

Abstract: A high electron mobility transistor device includes a substrate, a plurality of pairs of alternating layers, at least one stress-relief layer and a gallium nitride layer. The plurality of pairs of alternating layers is disposed over the substrate, and each pair of alternating layers includes a carbon-doped gallium nitride layer and an undoped gallium nitride layer. The stress-relief layer is disposed between the pairs of alternating layers. The gallium nitride layer is disposed over the alternating layers.

Abstract: A method for screening a lithium ion battery is provided. A number of lithium ion batteries are galvanostatically discharged a to an inflection point voltage at an inflection point of a discharge curve at a first constant current I1. The number of lithium ion batteries are rested for a first rest time T1 to raise an open circuit voltage of the number of lithium ion batteries to U1. U1 is greater than the inflection point voltage. The number of lithium ion batteries are galvanostatically discharged to the inflection point voltage at a second constant current I2, in which I2<<I1. The number of lithium ion batteries are rested for a second rest time T2 and the batteries are screened based on a self-discharge of the number of lithium ion batteries.

Abstract: A method for making a sulfur based cathode composite material is disclosed. Polyacrylonitrile and elemental sulfur are dissolved together in a first solvent to form a first solution. An electrically conductive carbonaceous material is added to the first solution to mix with the polyacrylonitrile and the elemental sulfur. An environment in which the polyacrylonitrile and the elemental sulfur are located in is changed to reduce a solubility of the polyacrylonitrile and the elemental sulfur in a changed environment to simultaneously precipitate the polyacrylonitrile and the elemental sulfur, thereby forming a precipitate having the electrically conductive carbonaceous material. The precipitate is heated to chemically react the polyacrylonitrile with the elemental sulfur. A sulfur based cathode composite material is also disclosed.

Abstract: A method for making a sulfur based cathode composite material is disclosed. Polyacrylonitrile and elemental sulfur are dissolved together in a first solvent to form a first solution. An additive is added to the first solution to mix with the polyacrylonitrile and the elemental sulfur. The additive is at least one of metal and metal sulfide. An environment in which the polyacrylonitrile and the elemental sulfur are located in is changed to reduce a solubility of the polyacrylonitrile and the elemental sulfur in a changed environment to simultaneously precipitate the polyacrylonitrile and the elemental sulfur, thereby forming a precipitate having the additive. The precipitate is heated to chemically react the polyacrylonitrile with the elemental sulfur.

Abstract: A method of screening a lithium ion battery is provided. A number of lithium ion batteries are galvanostatically discharged to a discharge cutoff voltage V0 at a first constant current I1. The number of lithium ion batteries are rested for a first rest time T1. The number of lithium ion batteries are galvanostatically charged to a charge cutoff voltage V1 at a second constant current I2. The number of lithium ion batteries are rested for a second rest time T2, and the batteries are screened based on a self-discharge of the plurality of lithium ion batteries.

Abstract: A method for screening a lithium ion battery is provided. A number of lithium ion batteries are galvanostatically discharged a to an inflection point voltage at an inflection point of a discharge curve at a first constant current I1. The number of lithium ion batteries are rested for a first rest time T1 to raise an open circuit voltage of the number of lithium ion batteries to U1. U1 is greater than the inflection point voltage. The number of lithium ion batteries are galvanostatically discharged to the inflection point voltage at a second constant current I2, in which I2<<I1. The number of lithium ion batteries are rested for a second rest time T2 and the batteries are screened based on a self-discharge of the number of lithium ion batteries.

Abstract: An electronic low-frequency pulse patch of a one-piece structure comprises a flexible top cover body, a hollow supporting enclosure, a circuit control unit, a power supply unit, a base and a coupling output conductive flexible film. Flexible top cover body is coupled to the coupling output conductive flexible film with hollow supporting enclosure located therebetween. Circuit control unit and the power supply unit are coupled to the base for providing respective low-frequency electric pulses. Electrical conduction is accomplished by electrically connecting the first and the second conductive ends of the base to respective conductive contact lugs of the coupling output conductive flexible film. At either side of which, first and second low-frequency pulse output regions are disposed, such that the electronic low-frequency pulse patch is bendable for conforming to curvature at different locations of the human body without using screw or other means.

Abstract: A planar bio-test strip includes a carrier plate, a conductive circuit formed on the carrier plate by evaporation, a testing electrode terminal and an electrode circuit terminal formed at front and rear ends of the conductive circuit respectively, and an enzyme reacting area coupled to a front end of the testing electrode terminal. A manufacturing method of the planar bio-test strip includes (1) using a plastic film as a carrier plate, and constructing a shadow mask by printing; (2) evaporating the carrier plate printed with the shadow mask to form a conductive electroplated layer; (3) removing a block of the conductive electroplated layer covered by the shadow mask by a physical method to expose the conductive circuit; (4) setting an enzyme in an enzyme reacting area; (5) attaching a cover film; such that the test strip can be mass produced with low costs, and enhanced quality, stability and market competiveness.

Abstract: An electronic low-frequency pulse patch of a one-piece structure is disclosed, which has a power supply and a circuit capable of outputting positive and negative current pulses concealed therein, and in which, without use of a flexible ribbon cable set and an additional fastener, a host unit and a coupling conductive patch unit assembly are joined together with the appearance to form a one-piece seamless water-proof structure for use as a self-adhesion patch device capable of generating a low-frequency pulse output.

Abstract: The refrigeration system for an ethylene plant comprises a closed loop tertiary refrigerant system containing methane, ethylene and propylene. The tertiary refrigerant from a compressor final discharge is separated into a methane-rich vapor fraction and two levels of propylene-rich liquids so as to provide various temperatures and levels of refrigeration in various heat exchange stages while maintaining a nearly constant refrigerant composition flowing back to the compressor and with the bulk of the total return refrigerant flow going to the first stage compressor section. This tertiary system can also be applied to an ethylene plant with a high pressure demethanizer.

Abstract: The refrigeration system for an ethylene plant comprises a closed loop tertiary refrigerant system containing methane, ethylene and propylene. The tertiary refrigerant from a compressor is separated into an inter-stage discharge and the final compressor discharge to produce a methane-rich vapor fraction and two levels of propylene-rich liquids so as to provide various temperatures and levels of refrigeration in various heat exchange stages while maintaining a nearly constant refrigerant composition flowing back to the compressor and with the bulk of the total return refrigerant flow going to the first stage compressor section. This tertiary system can also be applied to an ethylene plant with a high pressure demethanizer.