Patents by Inventor Tuan-Yen Yu
Tuan-Yen Yu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10747099Abstract: The present invention provides a photomask, comprising: a substrate, a first region, a second region and a third region are defined thereon, wherein the third region is disposed between the first region and the second region, a patterned layer disposed on the substrate, wherein the patterned layer comprises a first patterned layer disposed in the first region, a second patterned layer disposed in the second region, and a third patterned layer disposed in the third region, and wherein a thickness of the first patterned layer is equal to a thickness of the second patterned layer, the thickness of the first patterned layer is different from a thickness of the third patterned layer, and at least one recess disposed in the third region.Type: GrantFiled: May 22, 2018Date of Patent: August 18, 2020Assignee: UNITED MICROELECTRONICS CORP.Inventors: Yen-Pu Chen, Shu-Yen Liu, Tang-Chun Weng, Tuan-Yen Yu
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Publication number: 20190361339Abstract: The present invention provides a photomask, comprising: a substrate, a first region, a second region and a third region are defined thereon, wherein the third region is disposed between the first region and the second region, a patterned layer disposed on the substrate, wherein the patterned layer comprises a first patterned layer disposed in the first region, a second patterned layer disposed in the second region, and a third patterned layer disposed in the third region, and wherein a thickness of the first patterned layer is equal to a thickness of the second patterned layer, the thickness of the first patterned layer is different from a thickness of the third patterned layer, and at least one recess disposed in the third region.Type: ApplicationFiled: May 22, 2018Publication date: November 28, 2019Inventors: Yen-Pu Chen, Shu-Yen Liu, Tang-Chun Weng, Tuan-Yen Yu
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Patent number: 9581898Abstract: A manufacturing method of a pattern transfer mask includes the following steps. A basic mask is provided. The basic mask includes a plurality of patterns formed by a patterned absorber layer on a substrate according to a first writing layout. A photolithographic process is then performed by the basic mask to obtain individual depth of focus (iDoF) ranges of each of the patterns and a usable depth of focus (UDoF) range of the patterns. At least one constrain pattern dominating the UDoF range is selected from the patterns in the basic mask. The rest of the patterns except the constrain pattern are non-dominating patterns. A second writing layout is then generated for reducing a thickness of the patterned absorber layer in the constrain pattern or in the non-dominating patterns.Type: GrantFiled: April 14, 2015Date of Patent: February 28, 2017Assignee: UNITED MICROELECTRONICS CORP.Inventors: En-Chiuan Liou, Chia-Hsun Tseng, Tuan-Yen Yu, Po-Tsang Chen, Yi-Ting Chen
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Publication number: 20160306274Abstract: A manufacturing method of a pattern transfer mask includes the following steps. A basic mask is provided. The basic mask includes a plurality of patterns formed by a patterned absorber layer on a substrate according to a first writing layout. A photolithographic process is then performed by the basic mask to obtain individual depth of focus (iDoF) ranges of each of the patterns and a usable depth of focus (UDoF) range of the patterns. At least one constrain pattern dominating the UDoF range is selected from the patterns in the basic mask. The rest of the patterns except the constrain pattern are non-dominating patterns. A second writing layout is then generated for reducing a thickness of the patterned absorber layer in the constrain pattern or in the non-dominating patterns.Type: ApplicationFiled: April 14, 2015Publication date: October 20, 2016Inventors: En-Chiuan Liou, Chia-Hsun Tseng, Tuan-Yen Yu, Po-Tsang Chen, Yi-Ting Chen
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Patent number: 9400435Abstract: A method of correcting an overlay error includes the following steps. First, an overlay mark disposed on a substrate is captured so as to generate overlay mark information. The overlay mark includes at least a pair of first mark patterns and at least a second mark pattern above the first mark patterns. Then, the overlay mark information is calculated to generate an offset value between two first mark patterns and to generate a shift value between the second mark pattern and one of the first mark patterns. Finally, the offset value is used to compensate the shift value so as to generate an amended shift value.Type: GrantFiled: August 12, 2014Date of Patent: July 26, 2016Assignee: UNITED MICROELECTRONICS CORP.Inventors: En-Chiuan Liou, Chia-Chang Hsu, Teng-Chin Kuo, Chia-Hung Wang, Tuan-Yen Yu, Yuan-Chi Pai, Chun-Chi Yu
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Publication number: 20150362905Abstract: A method of correcting an overlay error includes the following steps. First, an overlay mark disposed on a substrate is captured so as to generate overlay mark information. The overlay mark includes at least a pair of first mark patterns and at least a second mark pattern above the first mark patterns. Then, the overlay mark information is calculated to generate an offset value between two first mark patterns and to generate a shift value between the second mark pattern and one of the first mark patterns. Finally, the offset value is used to compensate the shift value so as to generate an amended shift value.Type: ApplicationFiled: August 12, 2014Publication date: December 17, 2015Inventors: En-Chiuan Liou, Chia-Chang Hsu, Teng-Chin Kuo, Chia-Hung Wang, Tuan-Yen Yu, Yuan-Chi Pai, Chun-Chi Yu
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Publication number: 20140120476Abstract: A method of forming a photoresist pattern, in which, a substrate is coated with a photoresist layer, an exposure process is performed on the photoresist layer to expose the photoresist layer, the photoresist layer is rinsed with a surfactant after the exposure process is performed, and the photoresist layer is post-exposure baked after the photoresist layer is rinsed with the surfactant.Type: ApplicationFiled: October 26, 2012Publication date: May 1, 2014Applicant: UNITED MICROELECTRONICS CORP.Inventors: Tuan-Yen Yu, Yuan-Chi Pai, Chun-Chi Yu
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Patent number: 8524423Abstract: A method of forming assist feature patterns includes providing an original layout pattern having at least a first region defined therein, the first region having a first light transmission rate larger than 0%; performing a search step to the original layout pattern to define at least a second region having a second light transmission rate equal to 0% in the original layout pattern; forming a plurality of assist features in the second region to increase the second light transmission rate to larger than 0%; and outputting the original layout pattern and the assist features to a reticle blank.Type: GrantFiled: July 11, 2011Date of Patent: September 3, 2013Assignee: United Microelectronics Corp.Inventors: Yi-Chih Chiang, Yuan-Chi Pai, Sho-Shen Lee, Yi-Ting Chen, Tuan-Yen Yu
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Publication number: 20130017474Abstract: A method of forming assist feature patterns includes providing an original layout pattern having at least a first region defined therein, the first region having a first light transmission rate larger than 0%; performing a search step to the original layout pattern to define at least a second region having a second light transmission rate equal to 0% in the original layout pattern; forming a plurality of assist features in the second region to increase the second light transmission rate to larger than 0%; and outputting the original layout pattern and the assist features to a reticle blank.Type: ApplicationFiled: July 11, 2011Publication date: January 17, 2013Inventors: Yi-Chih Chiang, Yuan-Chi Pai, Sho-Shen Lee, Yi-Ting Chen, Tuan-Yen Yu