Abstract: A semiconductor package and a manufacturing method are provided. The manufacturing method includes: forming a through via structure and a dipole structure over a carrier, wherein the through via structure and the dipole structure respectively include an insulating core and a conductive layer covering the insulating core; attaching a semiconductor die onto the carrier, wherein the through via structure and the dipole structure are located aside the semiconductor die; laterally encapsulating the though via structure, the dipole structure and the semiconductor die with an encapsulant; and removing the carrier.

Abstract: A method of manufacturing a semiconductor package includes depositing a first dielectric layer over a carrier substrate. A first metallization pattern is formed over the first dielectric layer. The first metallization pattern has a first opening exposing the first dielectric layer. A second dielectric layer is deposited over the first metallization pattern, forming a dielectric slot through the first metallization pattern by filling the first opening. A second metallization pattern and a third dielectric layer are formed over the second dielectric layer. A through via is formed over the third dielectric layer, so that the dielectric slot is laterally under the through via.

Abstract: A semiconductor package and a manufacturing method are provided. The manufacturing method includes: forming a through via structure and a dipole structure over a carrier, wherein the through via structure and the dipole structure respectively include an insulating core and a conductive layer covering the insulating core; attaching a semiconductor die onto the carrier, wherein the through via structure and the dipole structure are located aside the semiconductor die; laterally encapsulating the though via structure, the dipole structure and the semiconductor die with an encapsulant; and removing the carrier.

Abstract: A semiconductor package and a manufacturing method are provided. The manufacturing method includes: forming a through via structure and a dipole structure over a carrier, wherein the through via structure and the dipole structure respectively include an insulating core and a conductive layer covering the insulating core; attaching a semiconductor die onto the carrier, wherein the through via structure and the dipole structure are located aside the semiconductor die; laterally encapsulating the though via structure, the dipole structure and the semiconductor die with an encapsulant; and removing the carrier.

Abstract: A semiconductor package and a manufacturing method are provided. The semiconductor package includes a semiconductor die, a through via structure, a dipole structure and an encapsulant. The through via structure and the dipole structure are disposed aside the semiconductor die, and respectively includes an insulating core and a conductive layer. A front surface and a sidewall of the insulating core are covered by the conductive layer. The semiconductor die, the through via structure and the dipole structure are laterally encapsulated by the encapsulant. Surfaces of capping portions of the conductive layers covering the front surfaces of the insulating cores are substantially coplanar with a front surface of the encapsulant.

Abstract: A package structure is provided. The package structure includes a dielectric layer on a die, a RDL structure and a conductive terminal. The RDL structure comprises a redistribution layer in and on the dielectric layer. The redistribution layer comprises a via and a conductive plate. The via is located in and penetrating through the dielectric layer to be connected to the die. The conductive plate is on the via and the dielectric layer, and is connected to the die through the via. The conductive terminal is electrically connected to the die through the RDL structure. The via is ring-shaped.

Abstract: A semiconductor package and a manufacturing method are provided. The semiconductor package includes a semiconductor die, a through via structure, a dipole structure and an encapsulant. The through via structure and the dipole structure are disposed aside the semiconductor die, and respectively includes an insulating core and a conductive layer. A front surface and a sidewall of the insulating core are covered by the conductive layer. The semiconductor die, the through via structure and the dipole structure are laterally encapsulated by the encapsulant. Surfaces of capping portions of the conductive layers covering the front surfaces of the insulating cores are substantially coplanar with a front surface of the encapsulant.

Abstract: An electronic device and a manufacturing method thereof are provided. The electronic device includes a chip package, an antenna pattern, and an insulating layer. The chip package includes a semiconductor die and an insulating encapsulation enclosing the semiconductor die. The antenna pattern is electrically coupled to the chip package, where a material of the antenna pattern comprises a conductive powder having fused metal particles. The insulating layer disposed between the chip package and the antenna pattern, where the antenna pattern includes a first surface in contact with the insulating layer, and a second surface opposite to the first surface, and a surface roughness of the second surface is greater than a surface roughness of the first surface.

Abstract: A plating apparatus includes a plating bath, a substrate holder, an anode electrode, and a fluid stirring member. The plating bath is configured to contain a plating solution. The substrate holder is configured to hold a substrate to be plated in the plating bath. The anode electrode is disposed in the plating bath. The fluid stirring member is disposed between the anode electrode and the substrate to be plated, and includes a plurality of first stirring stripes a plurality of second stirring stripes. The first stirring stripes extend along a first direction parallel to a plating surface of the substrate to be plated. The second stirring stripes extend along a second direction intersected with the plurality of first stirring stripes and parallel to the plating surface, wherein the fluid stirring member is configured to reciprocate along the first direction and the second direction.

Abstract: A plating apparatus includes a plating bath, a substrate holder, an anode electrode, and a fluid stirring member. The plating bath is configured to contain a plating solution. The substrate holder is configured to hold a substrate to be plated in the plating bath. The anode electrode is disposed in the plating bath. The fluid stirring member is disposed between the anode electrode and the substrate to be plated, and includes a plurality of first stirring stripes a plurality of second stirring stripes. The first stirring stripes extend along a first direction parallel to a plating surface of the substrate to be plated. The second stirring stripes extend along a second direction intersected with the plurality of first stirring stripes and parallel to the plating surface, wherein the fluid stirring member is configured to reciprocate along the first direction and the second direction.

Abstract: An electronic device and a manufacturing method thereof are provided. The electronic device includes a chip package, an antenna pattern, and an insulating layer. The chip package includes a semiconductor die and an insulating encapsulation enclosing the semiconductor die. The antenna pattern is electrically coupled to the chip package, where a material of the antenna pattern comprises a conductive powder having fused metal particles. The insulating layer disposed between the chip package and the antenna pattern, where the antenna pattern includes a first surface in contact with the insulating layer, and a second surface opposite to the first surface, and a surface roughness of the second surface is greater than a surface roughness of the first surface.

Abstract: A package structure is provided. The package structure includes a dielectric layer on a die, a RDL structure and a conductive terminal. The RDL structure comprises a redistribution layer in and on the dielectric layer. The redistribution layer comprises a via and a conductive plate. The via is located in and penetrating through the dielectric layer to be connected to the die. The conductive plate is on the via and the dielectric layer, and is connected to the die through the via. The conductive terminal is electrically connected to the die through the RDL structure. The via is ring-shaped.

Abstract: A three-way optical device includes a case, a sleeve connected to one of openings of the case, photoelectric elements disposed in one of the openings, and optical filters. Each photoelectric element is associated with an optical signal. Each optical filter is located in the case, corresponding to at least two photoelectric elements, and each optical filter is disposed on an optical path of optical signals associated with the at least two corresponding photoelectric elements. Each optical filter enables the optical signal associated with at least one photoelectric element to penetrate and reflects optical signals associated with the remaining corresponding photoelectric elements, in which the optical signals reflected by the optical filter and penetrating the same optical filter have different wavelengths.

Abstract: A transmission device having optical fiber high definition digital audio-video data interface (HDMI/DVI/UDI), in which optical fiber is utilized as the physical connection for the logical channels of the transmission device, and is used to carry images, voices and auxiliary data of the logic channels. For the half-duplex transmission mode utilized by the display data channel, the reverse unit, the serial unit, and the multi-serial unit are properly arranged, thus fulfilling the DC balance requirement of optical fiber transmission, and resolving the lower tolerance rate shortcomings of the I2C bus specification of display data channel (DDC) and the customer electronics control (CEC) channel.

Abstract: A transmission device having optical fiber high definition digital audio-video data interface (HDMI/DVI/UDI), in which optical fiber is utilized as the physical connection for the logical channels of the transmission device, and is used to carry images, voices and auxiliary data of the logic channels. For the half-duplex transmission mode utilized by the display data channel, the reverse unit, the serial unit, and the multi-serial unit are properly arranged, thus fulfilling the DC balance requirement of optical fiber transmission, and resolving the lower tolerance rate shortcomings of the I2C bus specification of display data channel (DDC) and the customer electronics control (CEC) channel.

Abstract: A pluggable bi-directional transceiver with a single optical fiber comprises a sub-assembly module, a circuit board, a main frame, an upper cover, a lower cover, a tab-base and a tab, connected to a communication equipment. The sub-assembly module connected to a single optical fiber includes a WDM, which reflects or transmits a specific wavelength optical signal adapted to function in receiving and transmitting optical signal. The circuit board exchanges the signal of the sub-assembly module with the communication equipment. The main frame and the upper and lower covers are used to fix and protect elements. The tab and tab-base are used to fix the transceiver on the equipment or remove from it. The specifications of the transceiver follow the small form-factor pluggable transceiver multi-source agreement.

Abstract: A pluggable bi-directional transceiver with a single optical fiber comprises a sub-assembly module, a circuit board, a main frame, an upper cover, a lower cover, a tab-base and a tab, connected to a communication equipment. The sub-assembly module connected to a single optical fiber includes a WDM, which reflects or transmits a specific wavelength optical signal adapted to function in receiving and transmitting optical signal. The circuit board exchanges the signal of the sub-assembly module with the communication equipment. The main frame and the upper and lower covers are used to fix and protect elements. The tab and tab-base are used to fix the transceiver on the equipment or remove from it. The specifications of the transceiver follow the small form-factor pluggable transceiver multi-source agreement.