Abstract: This disclosure describes enhanced substrate transfer arm (STA) and pedestal designs related to a thermal compression bonding process. The designs include multiple row patterns of the STA and the pedestal used to: pick up a first substrate row from a first row of a tray; place the first substrate row onto a first row of a bond stage corresponding to the first row of the tray; pick up a second substrate row from the tray; place, using the suction cups, the second substrate row onto a remaining empty row of the bond stage; pick up the first substrate row after thermal bonding from the bond stage; place the first substrate row after thermal bonding onto the tray; when all substrates from the tray have been thermally bonded, pick up a last substrate row after thermal bonding from the bond stage; and place the last substrate row onto the tray.

Abstract: An apparatus includes a nozzle including a small die vacuum line disposed on a surface of the nozzle, and a large die vacuum line disposed on the surface and surrounding the small die vacuum line. The nozzle further includes a first die vacuum hole disposed through the surface and the small die vacuum line, and a second die vacuum hole disposed through the surface and the large die vacuum line. The small die vacuum line and the first die vacuum hole are configured to provide a vacuum to a small semiconductor die to be attached to a substrate, and the small die vacuum line, the large die vacuum line, the first die vacuum hole and the second die vacuum hole are configured to provide the vacuum to a large semiconductor die to be attached to the substrate.

Abstract: A method is provided for promoting adhesion of CVD copper to diffusion barrier material in integrated circuit manufacturing. The method includes depositing a first seed layer of copper on the barrier material by chemical vapor deposition (CVD) using (hfac)Cu(1,5-Dimethylcyclooctadiene) precursor. Following the deposition of the seed layer, which strongly adheres and conforms to the copper receiving surfaces on the diffusion barrier, the wafer substrate is positioned in an electro-chemical deposition apparatus, such as an electroplating or electroless plating bath. A second layer of copper is then deposited on the seed layer by means of electrochemical deposition, e.g., electroplating or electroless plating. The second layer of copper deposited by electro-chemical deposition is a “fill” or “bulk” layer, substantially thicker than the seed layer.