Patents by Inventor Tuck Foong Koh
Tuck Foong Koh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240120210Abstract: Exemplary methods of etching a silicon-containing material may include flowing a first fluorine-containing precursor into a remote plasma region of a semiconductor processing chamber. The methods may include flowing a sulfur-containing precursor into the remote plasma region of the semiconductor processing chamber. The methods may include forming a plasma within the remote plasma region to generate plasma effluents of the first fluorine-containing precursor and the sulfur-containing precursor. The methods may include flowing the plasma effluents into a processing region of the semiconductor processing chamber. A substrate may be positioned within the processing region. The substrate may include a trench formed through stacked layers including alternating layers of silicon nitride and silicon oxide. The methods may include isotropically etching the layers of silicon nitride while substantially maintaining the silicon oxide.Type: ApplicationFiled: October 11, 2022Publication date: April 11, 2024Applicant: Applied Materials, Inc.Inventors: Mikhail Korolik, Paul E. Gee, Wei Ying Doreen Yong, Tuck Foong Koh, John Sudijono, Philip A. Kraus, Thai Cheng Chua
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Publication number: 20230343615Abstract: A system for degassing substrates provides reduced infrared sources in a degas chamber. In some embodiments, the system includes a degas chamber with a microwave source and an infrared temperature sensor positioned in a bottom of the degas chamber, at least one hoop with an annular shape that is configured to support or lift a substrate and is formed from at least one first material that is opaque to microwaves and has an emissivity of 0.1 or less, and at least one actuator with a movable vertical shaft. Each of the at least one actuator is attached under one of the hoops at an outer perimeter of the hoop. The portion of the movable vertical shaft that is exposed to microwaves from the microwave source in the degas chamber is formed from at least one second material that is opaque to microwaves and has an emissivity of 0.1 or less.Type: ApplicationFiled: April 22, 2022Publication date: October 26, 2023Inventors: Prashant AGARWAL, Tuck Foong KOH, Ananthkrishna JUPUDI
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Patent number: 11670513Abstract: Methods, apparatuses, and systems for substrate processing for lowering contact resistance in at least contact pads of a semiconductor device are provided herein. In some embodiments, a method of substrate processing for lowering contact resistance of contact pads includes: circulating a cooling fluid in at least one channel of a pedestal; and exposing a backside of the substrate located on the pedestal to a cooling gas to cool a substrate located on the pedestal to a temperature of less than 70 degrees Celsius. In some embodiments in accordance with the present principles, the method can further include distributing a hydrogen gas or hydrogen gas combination over the substrate.Type: GrantFiled: April 11, 2021Date of Patent: June 6, 2023Assignee: APPLIED MATERIALS, INC.Inventors: Yueh Sheng Ow, Junqi Wei, Wen Long Favier Shoo, Ananthkrishna Jupudi, Takashi Shimizu, Kelvin Boh, Tuck Foong Koh
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Patent number: 11629409Abstract: Methods and apparatus for a substrate processing chamber are provided herein. In some embodiments, a substrate processing chamber includes a chamber body having sidewalls defining an interior volume having a polygon shape; a selectively sealable elongated opening disposed in an upper portion of the chamber body for transferring one or more substrates into or out of the chamber body; a funnel disposed at a first end of the chamber body, wherein the funnel increases in size along a direction from an outer surface of the chamber body to the interior volume; and a pump port disposed at a second end of the chamber body opposite the funnel.Type: GrantFiled: May 28, 2019Date of Patent: April 18, 2023Assignee: APPLIED MATERIALS, INC.Inventors: Ribhu Gautam, Ananthkrishna Jupudi, Tuck Foong Koh, Preetham P. Rao, Vinodh Ramachandran, Yueh Sheng Ow, Yuichi Wada, Cheng-Hsiung Tsai, Kai Liang Liew
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Publication number: 20230109912Abstract: Embodiments disclosed herein include a method of etching a 3D structure. In an embodiment, the method comprises providing the 3D structure in a microwave plasma chamber. In an embodiment, the 3D structure comprises a substrate, and alternating layers of silicon oxide and silicon nitride over the substrate. In an embodiment, the method further comprises flowing a first gas into the microwave plasma chamber, where the first gas comprises sulfur and fluorine. In an embodiment, the method comprises flowing a second gas into the microwave plasma chamber, where the second gas comprises an inert gas. In an embodiment, the method further comprises striking a plasma in the microwave plasma chamber, and etching the silicon nitride, where an etching selectivity of silicon nitride to silicon oxide is 50:1 or greater.Type: ApplicationFiled: September 6, 2022Publication date: April 13, 2023Inventors: Thai Cheng Chua, CHRISTIAN VALENCIA, DOREEN YONG, TUCK FOONG KOH, JENN-YUE WANG, PHILIP ALLAN KRAUS
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Publication number: 20230100602Abstract: A method for cleaning contacts on a substrate incorporates ion control to selectively remove oxides. The method includes exposing the substrate to ions of an inert gas, supplying a first RF frequency of a first bias power supply to a substrate support, supplying a second RF frequency of a second bias power supply to a substrate support, and adjusting a first power level of the first RF frequency and a second power level of the second RF frequency to selectively remove oxide from at least one contact on the substrate while inhibiting sputtering of polymer material wherein the oxide removal is selective over removal of polymer material surrounding the at least one contact.Type: ApplicationFiled: September 27, 2021Publication date: March 30, 2023Inventors: Tuck Foong KOH, John Leonard SUDIJONO
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Publication number: 20230086151Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a method for processing a substrate comprises performing a first vacuum processing procedure on a substrate, obtaining temperature measurements of the substrate from a vacuum thermocouple, obtaining temperature measurements of the substrate from a non-contact infrared sensor, calibrating the non-contact infrared sensor based on the temperature measurements from the vacuum thermocouple and the temperature measurements from the non-contact infrared sensor, and performing a second vacuum processing procedure on the substrate using the calibrated non-contact infrared sensor.Type: ApplicationFiled: September 23, 2021Publication date: March 23, 2023Inventors: Tuck Foong KOH, Ananthkrishna JUPUDI, Prashant AGARWAL
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Patent number: 11610807Abstract: Methods and apparatus for cleaving a substrate in a semiconductor chamber. The semiconductor chamber pressure is adjusted to a process pressure, a substrate is then heated to a nucleation temperature of ions implanted in the substrate, the temperature of the substrate is then adjusted below the nucleation temperature of the ions, and the temperature is maintained until cleaving of the substrate occurs. Microwaves may be used to provide heating of the substrate for the processes. A cleaving sensor may be used for detection of successful cleaving by detecting pressure changes, acoustic emissions, changes within the substrate, and/or residual gases given off by the implanted ions when the cleaving occurs.Type: GrantFiled: April 11, 2021Date of Patent: March 21, 2023Assignee: APPLIED MATERIALS, INC.Inventors: Felix Deng, Yueh Sheng Ow, Tuck Foong Koh, Nuno Yen-Chu Chen, Yuichi Wada, Sree Rangasai V. Kesapragada, Clinton Goh
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Patent number: 11569122Abstract: Methods and apparatus for cleaving a substrate in a semiconductor chamber. The semiconductor chamber pressure is adjusted to a process pressure, a substrate is then heated to a nucleation temperature of ions implanted in the substrate, the temperature of the substrate is then adjusted below the nucleation temperature of the ions, and the temperature is maintained until cleaving of the substrate occurs. Microwaves may be used to provide heating of the substrate for the processes. A cleaving sensor may be used for detection of successful cleaving by detecting pressure changes, acoustic emissions, changes within the substrate, and/or residual gases given off by the implanted ions when the cleaving occurs.Type: GrantFiled: March 30, 2021Date of Patent: January 31, 2023Assignee: APPLIED MATERIALS, INC.Inventors: Felix Deng, Yueh Sheng Ow, Tuck Foong Koh, Nuno Yen-Chu Chen, Yuichi Wada, Sree Rangasai V. Kesapragada, Clinton Goh
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Publication number: 20220406643Abstract: Embodiments of substrate supports for use in microwave degas chambers are provided herein. In some embodiments, a substrate support for use in a microwave degas chamber includes a support plate having one or more support features for supporting a substrate; a susceptor comprising a plate disposed on the support plate, wherein the susceptor includes one or more openings, wherein the one or more support features extend through corresponding ones of the one or more openings; and a metal foil disposed beneath a side of the susceptor facing the support plate.Type: ApplicationFiled: June 18, 2021Publication date: December 22, 2022Inventors: Tuck Foong KOH, Prashant AGARWAL, Ananthkrishna JUPUDI
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Patent number: 11375584Abstract: Methods and apparatus for processing a substrate are provided herein. The apparatus can include, for example, a microwave energy source configured to provide microwave energy from beneath a substrate support provided in an inner volume of the process chamber; a first microwave reflector positioned on the substrate support above a substrate supporting position of the substrate support; and a second microwave reflector positioned on the substrate support beneath the substrate supporting position, wherein the first microwave reflector and the second microwave reflector are positioned and configured such that microwave energy passes through the second microwave reflector and some of the microwave energy is reflected from a bottom surface of the first microwave reflector back to the substrate during operation.Type: GrantFiled: August 20, 2019Date of Patent: June 28, 2022Assignee: APPLIED MATERIALS, INC.Inventors: Tuck Foong Koh, Yueh Sheng Ow, Nuno Yen-Chu Chen, Ananthkrishna Jupudi, Preetham P. Rao
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Patent number: 11328929Abstract: Methods, apparatuses, and systems for substrate processing for lowering contact resistance in at least contact pads of a semiconductor device are provided herein. In some embodiments, a method of substrate processing for lowering contact resistance of contact pads includes: circulating a cooling fluid in at least one channel of a pedestal; and exposing a backside of the substrate located on the pedestal to a cooling gas to cool a substrate located on the pedestal to a temperature of less than 70 degrees Celsius. In some embodiments in accordance with the present principles, the method can further include distributing a hydrogen gas or hydrogen gas combination over the substrate.Type: GrantFiled: April 30, 2019Date of Patent: May 10, 2022Assignee: APPLIED MATERIALS, INC.Inventors: Yueh Sheng Ow, Junqi Wei, Wen Long Favier Shoo, Ananthkrishna Jupudi, Takashi Shimizu, Kelvin Boh, Tuck Foong Koh
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Publication number: 20210233802Abstract: Methods and apparatus for cleaving a substrate in a semiconductor chamber. The semiconductor chamber pressure is adjusted to a process pressure, a substrate is then heated to a nucleation temperature of ions implanted in the substrate, the temperature of the substrate is then adjusted below the nucleation temperature of the ions, and the temperature is maintained until cleaving of the substrate occurs. Microwaves may be used to provide heating of the substrate for the processes. A cleaving sensor may be used for detection of successful cleaving by detecting pressure changes, acoustic emissions, changes within the substrate, and/or residual gases given off by the implanted ions when the cleaving occurs.Type: ApplicationFiled: April 11, 2021Publication date: July 29, 2021Inventors: Felix DENG, Yueh Sheng OW, Tuck Foong KOH, Nuno Yen-Chu CHEN, Yuichi WADA, Sree Rangasai V. KESAPRAGADA, Clinton GOH
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Publication number: 20210233773Abstract: Methods, apparatuses, and systems for substrate processing for lowering contact resistance in at least contact pads of a semiconductor device are provided herein. In some embodiments, a method of substrate processing for lowering contact resistance of contact pads includes: circulating a cooling fluid in at least one channel of a pedestal; and exposing a backside of the substrate located on the pedestal to a cooling gas to cool a substrate located on the pedestal to a temperature of less than 70 degrees Celsius. In some embodiments in accordance with the present principles, the method can further include distributing a hydrogen gas or hydrogen gas combination over the substrate.Type: ApplicationFiled: April 11, 2021Publication date: July 29, 2021Inventors: YUEH SHENG OW, JUNQI WEI, WEN LONG FAVIER SHOO, ANANTHKRISHNA JUPUDI, TAKASHI SHIMIZU, KELVIN BOH, TUCK FOONG KOH
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Publication number: 20210217656Abstract: Methods and apparatus for cleaving a substrate in a semiconductor chamber. The semiconductor chamber pressure is adjusted to a process pressure, a substrate is then heated to a nucleation temperature of ions implanted in the substrate, the temperature of the substrate is then adjusted below the nucleation temperature of the ions, and the temperature is maintained until cleaving of the substrate occurs. Microwaves may be used to provide heating of the substrate for the processes. A cleaving sensor may be used for detection of successful cleaving by detecting pressure changes, acoustic emissions, changes within the substrate, and/or residual gases given off by the implanted ions when the cleaving occurs.Type: ApplicationFiled: March 30, 2021Publication date: July 15, 2021Inventors: Felix DENG, Yueh Sheng OW, Tuck Foong KOH, Nuno Yen-Chu CHEN, Yuichi WADA, Sree Rangasai V. KESAPRAGADA, Clinton GOH
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Patent number: 10991617Abstract: Methods and apparatus for cleaving a substrate in a semiconductor chamber. The semiconductor chamber pressure is adjusted to a process pressure, a substrate is then heated to a nucleation temperature of ions implanted in the substrate, the temperature of the substrate is then adjusted below the nucleation temperature of the ions, and the temperature is maintained until cleaving of the substrate occurs. Microwaves may be used to provide heating of the substrate for the processes. A cleaving sensor may be used for detection of successful cleaving by detecting pressure changes, acoustic emissions, changes within the substrate, and/or residual gases given off by the implanted ions when the cleaving occurs.Type: GrantFiled: May 6, 2019Date of Patent: April 27, 2021Assignee: APPLIED MATERIALS, INC.Inventors: Felix Deng, Yueh Sheng Ow, Tuck Foong Koh, Nuno Yen-Chu Chen, Yuichi Wada, Sree Rangasai V Kesapragada, Clinton Goh
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Patent number: 10978334Abstract: A sealing structure is between a workpiece or substrate and a carrier for plasma processing. In one example, a substrate carrier has a top surface for holding a substrate, the top surface having a perimeter and a resilient sealing ridge on the perimeter of the top surface to contact the substrate when the substrate is being carried on the carrier.Type: GrantFiled: January 22, 2015Date of Patent: April 13, 2021Assignee: Applied Materials, Inc.Inventors: Chin Hock Toh, Tuck Foong Koh, Sriskantharajah Thirunavukarasu, Jen Sern Lew, Arvind Sundarrajan, Seshadri Ramaswami
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Publication number: 20210059017Abstract: Methods and apparatus for processing a substrate are provided herein. The apparatus can include, for example, a microwave energy source configured to provide microwave energy from beneath a substrate support provided in an inner volume of the process chamber; a first microwave reflector positioned on the substrate support above a substrate supporting position of the substrate support; and a second microwave reflector positioned on the substrate support beneath the substrate supporting position, wherein the first microwave reflector and the second microwave reflector are positioned and configured such that microwave energy passes through the second microwave reflector and some of the microwave energy is reflected from a bottom surface of the first microwave reflector back to the substrate during operation.Type: ApplicationFiled: August 20, 2019Publication date: February 25, 2021Inventors: TUCK FOONG KOH, YUEH SHENG OW, NUNO YEN-CHU CHEN, ANANTHKRISHNA JUPUDI, PREETHAM P. RAO
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Publication number: 20210001520Abstract: Methods and apparatus for curing a substrate or polymer using variable microwave frequency are provided herein. In some embodiments, a method of curing a substrate or polymer using variable microwave frequency includes: contacting a substrate or polymer with a plurality of predetermined discontinuous microwave energy bandwidths or a plurality of predetermined discontinuous microwave energy frequencies to cure the substrate or polymer.Type: ApplicationFiled: July 2, 2020Publication date: January 7, 2021Inventors: Tuck Foong KOH, Chien-Kang HSIUNG, Yueh Sheng OW, Felix DENG, Yue CUI, Nuno Yen-Chu CHEN, Ananthkrishna JUPUDI, Clinton GOH, Vinodh RAMACHANDRAN
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Publication number: 20200378006Abstract: Methods and apparatus for a substrate processing chamber are provided herein. In some embodiments, a substrate processing chamber includes a chamber body having sidewalls defining an interior volume having a polygon shape; a selectively sealable elongated opening disposed in an upper portion of the chamber body for transferring one or more substrates into or out of the chamber body; a funnel disposed at a first end of the chamber body, wherein the funnel increases in size along a direction from an outer surface of the chamber body to the interior volume; and a pump port disposed at a second end of the chamber body opposite the funnel.Type: ApplicationFiled: May 28, 2019Publication date: December 3, 2020Inventors: RIBHU GAUTAM, ANANTHKRISHNA JUPUDI, TUCK FOONG KOH, PREETHAM P. RAO, VINODH RAMACHANDRAN, YUEH SHENG OW, YUICHI WADA, CHENG-HSIUNG TSAI, KAI LIANG LIEW