Abstract: Solid-state lighting devices including light-emitting diodes (LEDs) and more particularly sealing structures for LED packages are disclosed. Sealing structures include multiple seals within an LED package that provide a multiple barrier structure for enhanced protection from elemental ingress from a surrounding environment. Certain seals may be provided as bonding materials between cover structures and submounts of LED packages, thereby enclosing LED chips. Additional seals may be provided as coatings on surfaces of LED chips and/or submounts that are between cover structures and LED chips. Sealing structures may include multiple levels of hermetic seals with LED packages.

Abstract: Solid-state lighting devices, and more particularly, a multiple-layered cover structure for beamshaping for light-emitting devices such as light-emitting diodes (LEDs) are disclosed. LED devices may include the cover structures that have more than one layer, each with different index of refractions and/or shapes in order to provide more finely tuned beamshaping than would be possible with a cover structure formed from a single layer of silicone. The cover structure can cover a side and a top of an LED chip and include an inner layer with a first refractive index that covers at least a top of the LED chip, and an outer layer with second refractive index. The cover structure also includes lumiphoric material, either in one of the inner or outer layer, or in a separate layer. The inner and outer layers can be of different shapes to result in an emission with desired characteristics.

Abstract: Solid-state lighting devices, and more particularly sidewall arrangements for light-emitting devices such as light-emitting diodes (LEDs) are disclosed. LED devices may include light-altering materials that are provided around peripheral sidewalls of LED chips without the need for a supporting submount or lead frame. The side layer around the peripheral sidewall of the LED chip can include an inner layer and an outer layer, each with different light altering properties. For example, the inner layer can be reflective so as to improve the light output and/or efficiency of the LED chip, while the outer layer can be absorptive so as to avoid interaction and/or crosstalk with neighboring LED chips. By having a reflective inner layer, and an absorptive outer layer, light output, sharpness, and contrast can be improved.

Abstract: Solid-state lighting devices including light-emitting diodes (LEDs) and more particularly sealing structures for LED packages are disclosed. Sealing structures include multiple seals within an LED package that provide a multiple barrier structure for enhanced protection from elemental ingress from a surrounding environment. Certain seals may be provided as bonding materials between cover structures and submounts of LED packages, thereby enclosing LED chips. Additional seals may be provided as coatings on surfaces of LED chips and/or submounts that are between cover structures and LED chips. Sealing structures may include multiple levels of hermetic seals with LED packages.

Abstract: Solid-state lighting devices and more particularly light-emitting devices including light-emitting diodes (LEDs) with light-altering material arrangements are disclosed. LED devices may include light-altering materials that are provided around peripheral sidewalls of LED chips without the need for a supporting submount or lead frame. The light-altering materials may be provided with reduced thicknesses along peripheral sidewalls of LED chips. An exemplary LED device as disclosed herein may be configured with a footprint that is close to a footprint of the LED chip within the LED device while also providing an amount of light-altering material around peripheral edges of the LED chip to reduce cross-talk. Accordingly, such LED devices may be well suited for use in applications where LED devices form closely-spaced LED arrays. Fabrication techniques are disclosed that include laminating a preformed sheet of light-altering material on one or more surfaces of the LED chip.

Abstract: Solid-state lighting devices and more particularly light-emitting devices including light-emitting diodes (LEDs) with light-altering material arrangements are disclosed. LED devices may include light-altering materials that are provided around peripheral sidewalls of LED chips without the need for a supporting submount or lead frame. The light-altering materials may be provided with reduced thicknesses along peripheral sidewalls of LED chips. An exemplary LED device as disclosed herein may be configured with a footprint that is close to a footprint of the LED chip within the LED device while also providing an amount of light-altering material around peripheral edges of the LED chip to reduce cross-talk. Accordingly, such LED devices may be well suited for use in applications where LED devices form closely-spaced LED arrays. Fabrication techniques are disclosed that include laminating a preformed sheet of light-altering material on one or more surfaces of the LED chip.