Publication number: 20230295804
Abstract: Methods of depositing a metal film by exposing a substrate surface to a halide precursor and an organosilane reactant are described. The halide precursor comprises a compound of general formula (I): MQzRm, wherein M is a metal, Q is a halogen selected from Cl, Br, F or I, z is from 1 to 6, R is selected from alkyl, CO, and cyclopentadienyl, and m is from 0 to 6. The aluminum reactant comprises a compound of general formula (II) or general formula (III): wherein R1, R2, R3, R4, R5, R6, R7, R8, Ra, Rb, Rc, Rd, Re, and Rf are independently selected from hydrogen (H), substituted alkyl or unsubstituted alkyl; and X, Y, X?, and Y? are independently selected from nitrogen (N) and carbon (C).
Type:
Application
Filed:
May 2, 2023
Publication date:
September 21, 2023
Applicant:
Applied Materials, Inc.
Inventors:
Srinivas Gandikota, Geetika Bajaj, Yixiong Yang, Seshadri Ganguli, Tuerxun Ailihumaer, Yogesh Sharma, Tianyi Huang