Abstract: A semiconductor tunable capacitor is described. This tunable capacitor employs a plurality of metal-insulator-semiconductor (MIS) capacitive segments and each element has a first and a second value of capacitance. The solid state capacitor employs a plurality of tuning terminals and a single capacitor terminal. Tuning signals are applied to each of the tuning terminals for switching that capacitive segment into its high or low capacitive state. The capacitor terminal is capacitively connected to each capacitive segment and is employed for summing the individual values of capacitance into a total value of capacitance. An MNOS capacitor is shown as the preferred embodiment.

Abstract: An improvement of the prior art method of processing large scale integrated (LSI) semiconductors is disclosed, wherein an etching procedure, which was previously performed as the final processing step, is now done at an earlier stage to preclude damage to the surface of the wafer on which the active devices are formed. In the prior art method of fabricating an active device on a semiconductor wafer, an undesirable layer of field oxide manifests itself on the reverse side when the field oxide is grown on the obverse or principal side of the wafer. The prior processing philosophy was to allow the oxide layer to remain on the wafer until after the processing was completed and, as a final step, the undesired oxide coating was removed. This was done by carefully placing the wafer in a pool of etchant so that only the reverse side is etched.

Abstract: A coating system applies silicon dioxide to microelectronic dies mounted on electrical conductor systems such as lead frames, circuit boards and to connecting wires in a single operation while preventing the deposition of silicon dioxide on the outer portions of leads which are formed as part of its lead frame.

Abstract: A matrix array of semiconductor diodes formed in an epitaxial layer of a semiconductor wafer and being dielectrically isolated from each other by two orthogonal sets of parallel insulating oxide regions, one set extending completely through the epitaxial layer and the other set extending only partially through the epitaxial layer. A preferred method of forming the matrix array is also disclosed.

Abstract: A method of forming dielectrically isolated islands of semiconductor material on which discrete devices may be formed is disclosed. A wafer of semiconductive material is provided with an oxide layer and, by ion implantation, is lightly doped after which, openings are formed in the oxide. The portions of wafer exposed by the openings are then heavily doped and the wafer is then subjected to a high temperature step to drive in the dopants and produce isolated areas.