Abstract: According to an example of the implementation, a radio frequency (RF) semiconductor device to process RF signals in an operating frequency range including a semiconductor chip including a first surface, a second surface, sidewalls and an active chip region. The first surface and second surface extend along a lateral direction and the sidewalls extend along a vertical direction. A metal layer external to the active chip region faces the second surface of the semiconductor chip. The metal layer has a thickness that is below a skin depth corresponding to the operating frequency range.

Abstract: A chip package includes a semiconductor chip and a substrate integrated waveguide. The substrate integrated waveguide includes a first metal layer, a second metal layer arranged over the first metal layer and a dielectric substrate arranged between the first metal layer and the second metal layer. The chip package further includes a slot formed in the second metal layer and a signal line electrically coupling the semiconductor chip and the second metal layer. The signal line crosses the slot when viewed in a direction perpendicular to the second metal layer.

Abstract: A semiconductor package includes a semiconductor chip including multiple radio frequency channels. The semiconductor package further includes a signal port arranged external to the semiconductor chip and associated with one of the multiple radio frequency channels. The semiconductor package further includes a shielding structure at least partially surrounding the signal port when viewed in a first direction, wherein the shielding structure is configured to reduce a propagation of an interference signal from and/or to the signal port in a second direction perpendicular to the first direction.

Abstract: A radio frequency (RF) semiconductor device to process RF signals in an operating frequency range is provided which includes, a semiconductor chip including a first surface, a second surface opposite to the first surface and sidewalls, the semiconductor chip including an active chip area, a redistribution layer including a first side, the first side of the redistribution layer facing the first surface of the semiconductor chip, an RF absorption layer external to the active chip area, wherein the RF absorption layer includes a doped semiconductor material.

Abstract: A radio-frequency device comprises a printed circuit board and a radio-frequency package having a radio-frequency chip and a radio-frequency radiation element, the radio-frequency package being mounted on the printed circuit board. The radio-frequency device furthermore comprises a waveguide component having a waveguide, wherein the radio-frequency radiation element is configured to radiate transmission signals into the waveguide and/or to receive reception signals via the waveguide.

Abstract: A device includes a radio frequency chip and a heat sink arranged over the radio frequency chip. The device further includes a layer stack arranged between the radio frequency chip and the heat sink. The layer stack includes a first layer including a first material, a thermal interface material, and a metal layer arranged between the first material and the thermal interface material.

Abstract: A tire pressure monitoring system (TPMS) includes a communication interface device configured to communicate with a target TPMS sensor module. The communication interface device include a radio frequency (RF) transceiver configured to generate at least one wake-up signal; an antenna array configured to transmit each wake-up signal as a directional RF beam; a processing circuit configured to monitor for a response signal in response to the antenna array transmitting the at least one wake-up signal; and a power amplifier configured to set a power of each wake-up signal according to an adjustable power setting such that the power of each subsequent wake-up signal is increased in discrete steps until the response signal is received by the RF transceiver.

Abstract: A chip package includes a chip configured to generate and/or receive a signal; a laminate substrate including a substrate integrated waveguide (SIW) for carrying the signal, the substrate integrated waveguide including a chip-to-SIW transition structure configured to couple the signal between the SIW and the chip and a SIW-to-waveguide transition structure configured to couple the signal out of the SIW or into the SIW, wherein the SIW-to-waveguide transition structure includes a waveguide aperture; and a plurality of electrical interfaces arranged about a periphery of the waveguide aperture, the plurality of electrical interfaces configured to receive the signal from the SIW-to-waveguide transition structure and output the signal from the chip package or to couple the signal to the SIW-to-waveguide transition structure and into the chip package.

Abstract: A semiconductor device includes a semiconductor chip including an electrical contact arranged on a main surface of the semiconductor chip, an external connection element configured to provide a first electrical connection between the semiconductor device and a printed circuit board, and an electrical redistribution layer extending in a direction parallel to the main surface of the semiconductor chip and configured to provide a second electrical connection between the electrical contact of the semiconductor chip and the external connection element. The electrical redistribution layer includes a ground line connected to a ground potential and a signal line configured to carry an electrical signal having a wavelength.

Abstract: A chip package includes a chip configured to generate and/or receive a signal; a laminate substrate including a substrate integrated waveguide (SIW) for carrying the signal, the substrate integrated waveguide including a chip-to-SIW transition structure configured to couple the signal between the SIW and the chip and a SIW-to-waveguide transition structure configured to couple the signal out of the SIW or into the SIW, wherein the SIW-to-waveguide transition structure includes a waveguide aperture; and a plurality of electrical interfaces arranged about a periphery of the waveguide aperture, the plurality of electrical interfaces configured to receive the signal from the SIW-to-waveguide transition structure and output the signal from the chip package or to couple the signal to the SIW-to-waveguide transition structure and into the chip package.

Abstract: A tire pressure monitoring system (TPMS) includes a communication interface device configured to communicate with a target TPMS sensor module. The communication interface device include a radio frequency (RF) transceiver configured to generate at least one wake-up signal; an antenna array configured to transmit each wake-up signal as a directional RF beam; a processing circuit configured to monitor for a response signal in response to the antenna array transmitting the at least one wake-up signal; and a power amplifier configured to set a power of each wake-up signal according to an adjustable power setting such that the power of each subsequent wake-up signal is increased in discrete steps until the response signal is received by the RF transceiver.

Abstract: A radio-frequency device comprises a printed circuit board and a radio-frequency package having a radio-frequency chip and a radio-frequency radiation element, the radio-frequency package being mounted on the printed circuit board. The radio-frequency device furthermore comprises a waveguide component having a waveguide, wherein the radio-frequency radiation element is configured to radiate transmission signals into the waveguide and/or to receive reception signals via the waveguide.

Abstract: A semiconductor device includes a semiconductor chip including an electrical contact arranged on a main surface of the semiconductor chip, an external connection element configured to provide a first electrical connection between the semiconductor device and a printed circuit board, and an electrical redistribution layer extending in a direction parallel to the main surface of the semiconductor chip and configured to provide a second electrical connection between the electrical contact of the semiconductor chip and the external connection element. The electrical redistribution layer includes a ground line connected to a ground potential and a signal line configured to carry an electrical signal having a wavelength.