Patents by Inventor Tuneaki Tomonaga

Tuneaki Tomonaga has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8888911
    Abstract: The present invention provides a technique which enables production of single crystal silicon having relatively low resistivity by preventing cell growth during crystal growth from occurring, especially in a case where a relatively large amount of dopant is added to a molten silicon raw material. Specifically, the present invention provides a method of producing single crystal silicon by the Czochralski process, comprising producing single crystal silicon having relatively low resistivity by controlling a height of a solid-liquid interface when the single crystal silicon is pulled up.
    Type: Grant
    Filed: September 3, 2010
    Date of Patent: November 18, 2014
    Assignee: Sumco Techxiv Corporation
    Inventors: Masayuki Uto, Tuneaki Tomonaga, Toshimichi Kubota, Fukuo Ogawa, Yasuhito Narushima
  • Publication number: 20110056428
    Abstract: The present invention provides a technique which enables production of single crystal silicon having relatively low resistivity by preventing cell growth during crystal growth from occurring, especially in a case where a relatively large amount of dopant is added to a molten silicon raw material. Specifically, the present invention provides a method of producing single crystal silicon by the Czochralski process, comprising producing single crystal silicon having relatively low resistivity by controlling a height of a solid-liquid interface when the single crystal silicon is pulled up.
    Type: Application
    Filed: September 3, 2010
    Publication date: March 10, 2011
    Applicant: SUMCO CORPORATION
    Inventors: Masayuki Uto, Tuneaki Tomonaga, Toshimichi Kubota, Fukuo Ogawa, Yasuhito Narushima