Abstract: A gapless ferrite structure for circulator or isolator includes a first base having a first flange and a first limit slot surrounded by the first flange, a second base having a second flange and a second limit slot surrounded by the second flange, a ferrite with two ends accommodated in the first limit slot and the second limit slot respectively, two limit magnets installed on the first base and the second base respectively and configured to be corresponsive to the ferrite to generate an attraction force on the ferrite, and two sealing units configured between an end of the ferrite and the first limit slot and between the other end of the ferrite and the second limit slot respectively. In this way, a gapless structure can be formed on a signal transmission path in a circulator or isolator.

Abstract: A cross-coupling structure for dielectric cavity filters includes a base and a tuner. The base is communicated with plural resonant cavities, a side through hole and a blind hole, and has a first channel formed between two adjacent resonant cavities which are not used for producing cross-coupling, and a second channel the resonant cavities formed between two adjacent resonant cavities which are used for producing cross-coupling. The side through hole is penetrated through the base and communicated with the second channel. The blind hole is formed on a wall of the second channel and has an opening facing the side through hole. The tuner is entered into the second channel from the side through hole and extended into the blind hole and can be adjustably moved between the opening of the blind hole and the bottom of the blind hole to set a cross-coupling amount target value.

Abstract: A display device includes a first substrate, a light-emitting element, a light conversion layer, and a color filter layer. The light-emitting element is disposed on the first substrate. The light conversion layer is disposed on the light-emitting element. In addition, the color filter layer is overlapped the light-emitting element and the light conversion layer.

Abstract: A memory device includes a substrate, a transistor disposed over the substrate, an interconnect structure disposed over and electrically connected to the transistor, and a memory stack disposed between two adjacent metallization layers of the interconnect structure. The memory stack includes a bottom electrode disposed over the substrate and electrically connected to a bit line, a memory layer disposed over the bottom electrode, a selector layer disposed over the memory layer, and a top electrode disposed over the selector layer and electrically connected to a word line. Besides, at least one moisture-resistant layer is provided adjacent to and in physical contact with the selector layer, and the at least one moisture-resistant layer includes an amorphous material.

Abstract: Electrostatic discharge (ESD) structures are provided. An ESD structure includes a semiconductor substrate, a first epitaxy region with a first type of conductivity over the semiconductor substrate, a second epitaxy region with a second type of conductivity over the semiconductor substrate, and a plurality of semiconductor layers. The semiconductor layers are stacked over the semiconductor substrate and between the first and second epitaxy regions. A first conductive feature is formed over the first epitaxy region and outside an oxide diffusion region. A second conductive feature is formed over the second epitaxy region and outside the oxide diffusion region. A third conductive feature is formed over the first epitaxy region and within the oxide diffusion region. A fourth conductive feature is formed over the second epitaxy region and within the oxide diffusion region. The oxide diffusion region is disposed between the first and second conductive features.

Abstract: A filter for producing a water composition containing silicic acid and hydrogen gas includes a carrier material and a silicon material supported on the carrier material. The filter has a diameter ranging from 50 ?m to 10 mm. A filter assembly, a filter device, and a water purification system containing the filter are also provided.

Abstract: A filter and a method of preparing thereof are provided. The method includes the steps of providing a precursor that includes a binder and an active composition containing a filtering material and a nano silicon material; and heating and pressing the precursor to obtain the filter. In the filter thus obtained, the filtering material is bound with the nano silicon material through the binder.

Abstract: A water composition is adapted to be received and sealed in a container and includes water that is capable of being utilized by living organism, silicic acid and hydrogen gas dissolved in the water. The silicic acid of the water composition is present in an amount of not greater than a saturation concentration of the silicic acid. The water composition has an oxidation reduction potential (ORP) that is lower than ?400 mV. A filter for producing the water composition includes a carrier and a silicon material adsorbed on the carrier. A filter assembly and a water purification system containing the filter are also provided.

Abstract: The present invention relates to a porous lithium phosphate metal salt and method for preparing the same. The method includes the following steps, which comprises: (A) providing starting materials including a phosphate-containing precursor, a lithium-containing precursor, a metal source, and a carbon source; (B) grinding the starting materials at room temperature to obtain a mixture; (C) spray-granulating the mixture to form a granular mixture; and (D) sintering the granular mixture to obtain a porous lithium phosphate metal salt, wherein the spray granulation process in the step (C) uses a spray granulation device having a plurality of spray nozzles.