Abstract: In a method for forming an integrated semiconductor device, a first inter-layer dielectric (ILD) layer is formed over a semiconductor device that includes a first transistor structure, a two-dimensional (2D) material layer is formed over and in contact with the first ILD layer, the 2D material layer is patterned to form a channel layer of a second transistor structure, a source electrode and a drain electrode of the second transistor structure are formed over the patterned 2D material layer and laterally spaced apart from each other, a gate dielectric layer of the second transistor structure is formed over the patterned 2D material layer, the source electrode and the drain electrode, and a gate electrode of the second transistor structure is formed over the gate dielectric layer and laterally between the source electrode and the drain electrode.

Abstract: The present invention provides a showerhead that allows a bather to switch among at least three different water delivery functions. In the first function, the showerhead delivers a concentrated fluttering spray at a rate not to exceed 2.0 GPM. In the second function, the showerhead delivers a combined spray pattern, wherein the fluttering spray and a radially dispersed precision spray are simultaneously delivered to the bather at a rate not to exceed 2.5 GPM for the combined water flow. In the third function, the showerhead delivers the precision spray pattern at a rate not to exceed 2.5 GPM. The combination spray pattern is effected without compromising either the desirable massaging and cleaning effect of water delivery or the inherent water conservation benefits. In addition, the showerhead of the present invention provides an automatic return feature for return of the showerhead to the first function when water pressure to the showerhead falls below a predetermined bottom threshold.