Patents by Inventor Tung H. Weng

Tung H. Weng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5015603
    Abstract: A low metal resistance ohmic contact alloyed to p InP material having TiW within the contact as a diffusion barrier layer between an underlay of AuZn and an overlay of Au. A process for fabricating an InP JFET containing a gate contact of respective AuZn, TiW, and Au layers and with the gate contact alloyed to p InP material of a semiconductive gate region provides an improved InP JFET having a low resistance metal alloyed ohmic contact to the gate region. Use of the TiW layer in a multilayer contact alloyed to P InP material leads to unique processing and improved InP semiconductor devices.
    Type: Grant
    Filed: December 28, 1988
    Date of Patent: May 14, 1991
    Assignee: The United States of America as represented by the Secretary of the Navy
    Inventors: John B. Boos, Nicolas A. Papanicolaou, Tung H. Weng
  • Patent number: 4816881
    Abstract: A low metal resistance ohmic contact alloyed to p InP material having TiW within the contact as a diffusion barrier layer between an underlay of AuZn and an overlay of Au. A process for fabricating an InP JFET containing a gate contact of respective AuZn, TiW, and Au layers and with the gate contact alloyed to p InP material of a semiconductive gate region provides an improved InP JFET having a low resistance metal alloyed ohmic contact to the gate region. Use of the TiW layer in a multilayer contact alloyed to p InP material leads to unique processing and improved InP semiconductor devices.
    Type: Grant
    Filed: June 17, 1988
    Date of Patent: March 28, 1989
    Assignee: United State of America as represented by the Secretary of the Navy
    Inventors: John B. Boos, Nicolas A. Papanicolaou, Tung H. Weng