Abstract: An apparatus for chemical mechanical polishing includes a pad conditioner. The pad conditioner includes a first disk having a first surface and a second disk having a second surface. The first surface has a first plurality of abrasives with a first mean size and the second surface has a second plurality of abrasives with a second mean size greater than the first mean size.

Abstract: A planarization apparatus is provided. The planarization apparatus includes a platen, and a grinding wheel. The platen is configured to support a wafer. The grinding wheel is over the platen and configured to grind the wafer. The grinding wheel includes a base ring, and a plurality of grinding teeth mounted on the base ring. The plurality of grinding teeth includes a plurality of grinding abrasives, and the plurality of grinding abrasives is ball type.

Abstract: Present disclosure provides chemical mechanical polishing (CMP) apparatus, including a counterface configured to support a semiconductor wafer at a first surface, a first electromagnet array under the first surface, a polishing head over the counterface and configured to hold the semiconductor wafer at a second surface, and a controller connects to the first electromagnet array. The first electromagnet array comprises a plurality of electromagnets, a polarity of each of the plurality of electromagnets is capable of being individually controlled by the controller. Present disclosure also provides a CMP slurry and a method for using a chemical mechanical polishing apparatus.