Patents by Inventor Tung-Hsi HSIEH

Tung-Hsi HSIEH has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor arrangement formation
    Patent number: 11721541
    Abstract: A method for forming a semiconductor arrangement is provided. The method includes forming a patterned photoresist over a top surface of a substrate. The method includes doping a first portion of the substrate using the patterned photoresist. The method includes removing the patterned photoresist using a gas comprising fluoride, wherein fluoride residue from the gas remains on the top surface of the substrate after removing the patterned photoresist. The method includes treating the substrate with nitrous oxide to remove the fluoride residue.
    Type: Grant
    Filed: March 3, 2021
    Date of Patent: August 8, 2023
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Ting-Jui Chen, Chen Chih-Fen, Jason Yu, Tung-Hsi Hsieh, Jiang-He Xie
  • SEMICONDUCTOR ARRANGEMENT FORMATION
    Publication number: 20220285148
    Abstract: A method for forming a semiconductor arrangement is provided. The method includes forming a patterned photoresist over a top surface of a substrate. The method includes doping a first portion of the substrate using the patterned photoresist. The method includes removing the patterned photoresist using a gas comprising fluoride, wherein fluoride residue from the gas remains on the top surface of the substrate after removing the patterned photoresist. The method includes treating the substrate with nitrous oxide to remove the fluoride residue.
    Type: Application
    Filed: March 3, 2021
    Publication date: September 8, 2022
    Inventors: Ting-Jui CHEN, Chen CHIH-FEN, Jason YU, Tung-Hsi HSIEH, Jiang-He XIE