Patents by Inventor Tung-Husan Hung

Tung-Husan Hung has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Epitaxy source/drain regions of FinFETs and method forming same
    Patent number: 10777664
    Abstract: A method includes forming isolation regions extending into a semiconductor substrate, and recessing the isolation regions, so that portions of semiconductor strips between the isolation regions protrude higher than the isolation regions to form semiconductor fins. The method further includes recessing the semiconductor fins to form recesses, epitaxially growing a first semiconductor material from the recesses, etching the first semiconductor material, and epitaxially growing a second semiconductor material from the first semiconductor material that has been etched back.
    Type: Grant
    Filed: November 26, 2018
    Date of Patent: September 15, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Tung-Husan Hung, Guan-Jie Shen, Pin-Cheng Hsu
  • Epitaxy Source/Drain Regions of FinFETs and Method Forming Same
    Publication number: 20190097026
    Abstract: A method includes forming isolation regions extending into a semiconductor substrate, and recessing the isolation regions, so that portions of semiconductor strips between the isolation regions protrude higher than the isolation regions to form semiconductor fins. The method further includes recessing the semiconductor fins to form recesses, epitaxially growing a first semiconductor material from the recesses, etching the first semiconductor material, and epitaxially growing a second semiconductor material from the first semiconductor material that has been etched back.
    Type: Application
    Filed: November 26, 2018
    Publication date: March 28, 2019
    Inventors: Tung-Husan Hung, Guan-Jie Shen, Pin-Cheng Hsu
  • Epitaxy source/drain regions of FinFETs and method forming same
    Patent number: 10141431
    Abstract: A method includes forming isolation regions extending into a semiconductor substrate, and recessing the isolation regions, so that portions of semiconductor strips between the isolation regions protrude higher than the isolation regions to form semiconductor fins. The method further includes recessing the semiconductor fins to form recesses, epitaxially growing a first semiconductor material from the recesses, etching the first semiconductor material, and epitaxially growing a second semiconductor material from the first semiconductor material that has been etched back.
    Type: Grant
    Filed: July 31, 2017
    Date of Patent: November 27, 2018
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Tung-Husan Hung, Guan-Jie Shen, Pin-Cheng Hsu