Abstract: A method of etching silicon with a laser at a very fast rate of the order of 45 microns/second includes the steps of providing an atmosphere of sulfur hexafluoride about the silicon and directing a continuous laser beam having a wavelength of about 0.6 or less microns at said silicon.

Abstract: Disclosed is a method of etching a metallized substrate by laser radiation. The substrate is exposed to a selected gas which spontaneously reacts with the metal forming a solid reaction product with the metal by a partial consumption of the metal. A beam of radiation of a wavelength suitable for absorption by the reaction product and/or by the metal thereunder is applied in a desired pattern to vaporize the reaction product and thereby selectively etch the metal.

Abstract: Disclosed is an apparatus and method for etching a glass substrate by laser induced dry etching. The apparatus features a housing including a vacuum chamber for receiving the substrate; a vacuum pump coupled to the chamber for evacuating the chamber; a gas source coupled to the chamber for supplying a halogen base gas which is capable of wetting the substrate surface and forming a glass etching specie when activated; a laser source for transmitting a light beam of predetermined wavelength and intensity through the gas; and a mask optically coupled to the laser source for patterning the light beam and also coupled to the chamber so that the light patterned by the mask may fall upon the substrate causing excitation thereof and activation of an etch specie for etching the substrate in conformity with the patterned light.

Abstract: A substrate which forms a volatile fluoride is etched and directionality is achieved using vibrationally excited SF.sub.6 which has been exposed to laser irradiation. The substrate is etched through a mask having openings smaller than the diffraction limit of the laser light.