Abstract: A display device and a display are provided. The display device includes: a drive substrate including a drive circuit, a light-emitting device array, a micro-optical structure, and a color conversion layer array. The light-emitting device array is disposed on a surface of the drive substrate and includes multiple light-emitting devices electrically connected to the drive circuit, and light emitted by the multiple light-emitting devices is light with a same color. The micro-optical structure is disposed above the light-emitting device array and used to refract the light emitted by the light-emitting device array to a uniform refraction angle. The color conversion layer array is disposed above the micro-optical structure, the multiple light-emitting devices respectively correspond to multiple color conversion layers in the color conversion layer array, and the color conversion layer array is used to convert the light emitted by the multiple light-emitting devices into light with a required color.

Abstract: Methods for manufacturing a display device are provided. The methods include providing a plurality of light-emitting units and a substrate. The methods also include transferring the light-emitting units to a transfer head. The methods further include attaching at least one of the plurality of light-emitting units on the transfer head to the substrate by a bonding process, wherein the transfer head and the substrate satisfy the following equation during the bonding process: 0 ? ? ? T ? ? 1 T ? ? 2 ? A ? ( T ) ? dT - ? T ? ? 1 T ? ? 3 ? E ? ( T ) ? dT ? ? < 0.01 wherein A(T) is the coefficient of thermal expansion of the transfer head, E(T) is the coefficient of thermal expansion of the substrate, T1 is room temperature, T2 is the temperature of the transfer head, and T3 is the temperature of the substrate.

Abstract: A micro-LED chip includes an epitaxial structure, which includes first and second doped type semiconductor layers and an active layer disposed between the first and second doped type semiconductor layers; a light-emitting side of the first doped type semiconductor layer facing away from the active layer is provided with a patterned structure; and an elongated edge a of the micro-LED chip, a thickness b of the micro-LED chip, and a peak-valley height difference c of the patterned structure satisfy: 0.01?b/a?6, and 0.01?c/b?0.3. By designing a structure size and/or a shape of the micro-LED chip combined with designing the peak-valley height difference of the patterned structure to satisfy the condition of 0.01?c/b?0.3, power of laser lift-off operation can be reduced and a process window thereof is enlarged, and light extraction efficiency of the micro-LED chip is achieved. And a display device using the micro-LED chip is provided.

Abstract: A compensation circuit and a driving circuit of light-emitting elements, and a light-emitting diode (LED) display device are provided. In the compensation circuit, a first compensation switching device is disposed between a first pixel unit and a second pixel unit, and a second compensation switching device is disposed between a second pixel unit and a third pixel unit. When the first compensation switching device is turned on, the first pixel unit is electrically connected to the second pixel unit to provide compensation current to the second pixel unit. When the second compensation switching device is turned on, the third pixel unit is electrically connected to the second pixel unit to provide compensation current to the second pixel unit. Through the compensation circuit, the second pixel unit can be ensured to have a larger operating current range and emit higher luminous intensity, and power consumption of switching elements is reduced.

Abstract: A light-emitting assembly with a raised adhesive layer includes a substrate, an adhesive layer, a plurality of light emitting units, and a protective layer. The adhesive layer is disposed on the substrate in a first direction. The light emitting units are disposed on the adhesive layer opposite to the substrate in the first direction. Each of the light emitting units includes a first-type semiconductor layer, a second-type semiconductor layer, an active layer that is disposed between the first-type and second-type semiconductor layers, a first electrode that is electrically connected to the first-type semiconductor layer, and a second electrode that is electrically connected to the second-type semiconductor layer. The protective layer is connected between the adhesive layer and the light emitting units, and has a Shore A hardness greater than that of said adhesive layer. A light emitting apparatus is also provided herein.

Abstract: A light emitting assembly includes a substrate, an adhesive layer on the substrate, and a plurality of light emitting units on the adhesive layer. Each of the light emitting units includes a first-type semiconductor layer, a second-type semiconductor layer, an active layer disposed between the first-type and second-type semiconductor layers, a first electrode electrically connected to the first-type semiconductor layer, and a second electrode electrically connected to the second-type semiconductor layer. A light emitting apparatus including the light emitting assembly is provided. Methods for making the light emitting assembly and the light emitting apparatus are provided.

Abstract: A display panel including a first current source and a first pixel unit is provided. The first pixel unit includes a first switch and a first light-emitting diode. The first switch is coupled to the first current source and receives a first scan signal. When the first scan signal is enabled, the first switch is turned on and receives a first current provided by the first current source. The first light-emitting diode is coupled to the first switch. When the first switch is turned on, the first current passes through the first light-emitting diode to turn on the first light-emitting diode.

Abstract: A display device includes a first substrate, a light-emitting element, a light conversion layer, and a color filter layer. The light-emitting element is disposed on the first substrate. The light conversion layer is disposed on the light-emitting element. In addition, the color filter layer is overlapped the light-emitting element and the light conversion layer.

Abstract: A display device includes a substrate, a light-emitting element, and a transistor. The substrate has a top surface. The light-emitting element is disposed on the substrate, and includes a first electrode and a second electrode. The transistor is disposed on the substrate and electrically connected to the light-emitting element. The transistor includes a gate electrode and a semiconductor layer. The semiconductor layer includes an overlapping portion overlapped with the gate electrode. The first electrode and the second electrode of the light-emitting element do not overlap with the overlapping portion along a direction perpendicular to the top surface of the substrate.

Abstract: A method for manufacturing a semiconductor device is provided. The method includes forming a plurality of light-emitting elements on a first substrate and forming a first pattern array on a second substrate, wherein the first pattern array includes an adhesive layer. The method also includes transferring the plurality of light-emitting elements from the first substrate to the second substrate and forming the first pattern array on a third substrate. The method includes transferring the plurality of light-emitting elements from the second substrate to the third substrate, and reducing an adhesion force of a portion of the adhesive layer. The method also includes forming a second pattern array on a fourth substrate, and transferring the plurality of light-emitting elements from the third substrate to the fourth substrate. The pitch between the plurality of light-emitting elements on the first substrate is different than the pitch of the first pattern array.

Abstract: A method for manufacturing a semiconductor device is provided. The method includes forming a plurality of diodes on a first substrate and forming a first pattern array on a second substrate. The method also includes transferring the plurality of diodes from the first substrate to the second substrate. The method further includes forming the first pattern array on a third substrate. In addition, the method includes transferring the plurality of diodes from the second substrate to the third substrate. The method also includes forming a second pattern array on a fourth substrate. The method further includes transferring the plurality of diodes from the third substrate to the fourth substrate. The pitch between the plurality of diodes on the first substrate is different from the pitch of the first pattern array.

Abstract: A method for manufacturing a semiconductor device is provided. The method includes forming a plurality of light-emitting elements on a first substrate and forming a first pattern array on a second substrate. The method also includes transferring the plurality of light-emitting elements from the first substrate to the second substrate. The method further includes forming the first pattern array on a third substrate. In addition, the method includes transferring the plurality of light-emitting elements from the second substrate to the third substrate. The method also includes forming a second pattern array on a fourth substrate. The method further includes transferring the plurality of light-emitting elements from the third substrate to the fourth substrate. The pitch between the plurality of light-emitting elements on the first substrate is different than the pitch of the first pattern array.

Abstract: Methods for manufacturing a display device are provided. The methods include providing a plurality of light-emitting units and a substrate. The methods also include transferring the light-emitting units to a transfer head. The methods further include attaching at least one of the plurality of light-emitting units on the transfer head to the substrate by a bonding process, wherein the transfer head and the substrate satisfy the following equation during the bonding process: 0 ? ? ? T ? ? 1 T ? ? 2 ? A ? ( T ) ? dT - ? T ? ? 1 T ? ? 3 ? E ? ( T ) ? dT ? ? < 0.01 wherein A(T) is the coefficient of thermal expansion of the transfer head, E(T) is the coefficient of thermal expansion of the substrate, T1 is room temperature, T2 is the temperature of the transfer head, and T3 is the temperature of the substrate.

Abstract: Methods for manufacturing a display device are provided. The methods include providing a plurality of light-emitting units and a substrate. The methods also include transferring the light-emitting units to a transfer head. The methods further include attaching at least one of the plurality of light-emitting units on the transfer head to the substrate by a bonding process, wherein the transfer head and the substrate satisfy the following equation during the bonding process: Q?|?T1T2A(T)dT??T1T3E(T)dT|<0.01, wherein A(T) is the coefficient of thermal expansion of the transfer head, E(T) is the coefficient of thermal expansion of the substrate, T1 is room temperature, T2 is the temperature of the transfer head, and T3 is the temperature of the substrate.

Abstract: A display device includes a substrate, a light-emitting element, and a transistor. The substrate has a top surface. The light-emitting element is disposed on the substrate, and includes a first electrode and a second electrode. The transistor is disposed on the substrate and electrically connected to the light-emitting element. The transistor includes a gate electrode and a semiconductor layer. The semiconductor layer includes an overlapping portion overlapped with the gate electrode. The first electrode and the second electrode of the light-emitting element do not overlap with the overlapping portion along a direction perpendicular to the top surface of the substrate.

Abstract: A display device includes a substrate, a light-emitting element, and a transistor. The substrate has a top surface. The light-emitting element is disposed on the substrate. The transistor is disposed on the substrate, and includes a drain electrode, a gate electrode, and a semiconductor layer. The drain electrode is electrically connected to the light-emitting element. The semiconductor layer includes an overlapping portion overlapped with the gate electrode. The light-emitting element does not overlap with the overlapping portion along a direction perpendicular to the top surface of the substrate.

Abstract: A light emitting assembly includes a substrate, an adhesive layer on the substrate, and a plurality of light emitting units on the adhesive layer. Each of the light emitting units includes a first-type semiconductor layer, a second-type semiconductor layer, an active layer disposed between the first-type and second-type semiconductor layers, a first electrode electrically connected to the first-type semiconductor layer, and a second electrode electrically connected to the second-type semiconductor layer. A light emitting apparatus including the light emitting assembly is provided. Methods for making the light emitting assembly and the light emitting apparatus are provided.

Abstract: Provided is a display device, which includes a substrate, a transistor, a capacitor and a light emitting unit. The transistor and the capacitor are disposed on the substrate. The light emitting unit is disposed on the substrate and arranged corresponding to the capacitor. The light emitting unit includes a first light emitting diode. The first light emitting diode is electrically connected with the transistor and overlaps the capacitor. The display device has favorable space utilization, provides a repair function, or reduces the probability of failure.

Abstract: A touch display device including a first substrate, a second substrate, a display medium, and a pixel array structure is provided. The pixel array structure includes a scan line, a data line, an active device, pixel electrodes, a signal electrode layer and a signal transmission layer. The scan line intersects the data line. The active device is connected to the scan line and the data line. The pixel electrodes are arranged in an array. The signal electrode layer includes signal electrodes. The signal transmission layer includes a signal line disposed between two adjacent columns of the pixel electrodes and electrically connected to one of the signal electrodes. The data line includes at least a portion located outside of the signal line.

Abstract: Methods for manufacturing a display device are provided. The methods include providing a plurality of light-emitting units and a substrate. The methods also include transferring the light-emitting units to a transfer head. The methods further include attaching at least one of the plurality of light-emitting units on the transfer head to the substrate by a bonding process, wherein the transfer head and the substrate satisfy the following equation during the bonding process: Q?|?T1T2A(T)dT??T1T3E(T)dT|<0.01, wherein A(T) is the coefficient of thermal expansion of the transfer head, E(T) is the coefficient of thermal expansion of the substrate, T1 is room temperature, T2 is the temperature of the transfer head, and T3 is the temperature of the substrate.