Abstract: In an embodiment, a device includes: a first metallization layer over a substrate, the substrate including active devices; a first bit line over the first metallization layer, the first bit line connected to first interconnects of the first metallization layer, the first bit line extending in a first direction, the first direction parallel to gates of the active devices; a first phase-change random access memory (PCRAM) cell over the first bit line; a word line over the first PCRAM cell, the word line extending in a second direction, the second direction perpendicular to the gates of the active devices; and a second metallization layer over the word line, the word line connected to second interconnects of the second metallization layer.

Abstract: A method includes forming a dielectric layer over a substrate, the dielectric layer having a top surface; etching an opening in the dielectric layer; forming a bottom electrode within the opening, the bottom electrode including a barrier layer; forming a phase-change material (PCM) layer within the opening and on the bottom electrode, wherein a top surface of the PCM layer is level with or below the top surface of the dielectric layer; and forming a top electrode on the PCM layer.

Abstract: A memory cell includes a memory device, a connecting structure, an insulating layer and a selector. The connecting structure is disposed on and electrically connected to the memory device. The insulating layer covers the memory device and the connecting structure. The selector is located on and electrically connected to the memory device, where the selector is disposed on the insulating layer and connected to the connecting structure by penetrating through the insulating layer.

Abstract: A method includes forming a dielectric layer over a substrate, the dielectric layer having a top surface; etching an opening in the dielectric layer; forming a bottom electrode within the opening, the bottom electrode including a barrier layer; forming a phase-change material (PCM) layer within the opening and on the bottom electrode, wherein a top surface of the PCM layer is level with or below the top surface of the dielectric layer; and forming a top electrode on the PCM layer.

Abstract: A phase-change memory device and a method for fabricating the same are provided. The phase-change memory device comprises a first electrode, a stack and a multi-layered spacer. The first electrode is disposed on and electrically connected to an interconnect wiring of the interconnect structure. The stack is disposed on the first electrode and comprises a phase-change layer disposed on the first electrode and a second electrode disposed on the phase-change layer. The multi-layered spacer covers the stack. A first portion of the multi-layered spacer covers a top surface of the stack, and a second portion of the multi-layered spacer covers a sidewall of the stack.

Abstract: An ash tray having a vessel formed with an open top and an internal flange for supporting a cigarette rest bracket and a side entrance for removably sliding a drawer-like receptacle into a lower portion of the vessel. The cigarette rest bracket having a plurality of cigarette rest members fromed by a pair of spaced triangular plates which sequentially defines a first trough with its gap larger than the diameter of a standard cigarette and a second trough with its gap smaller than the diameter of a standard cigarette thereby a lighted cigarette positioning on the cigarette rest member will finally fall through the first trough into the drawer-like receptacle and be extinguished by an extinguishing fluid contained within the receptacle.