Abstract: A detection method for a sensor membrane formed of europium titanium oxide as part of a biosensor by using PNIPAAm for wrapping enzymes includes adding 1.0 g of NIPAAm powder to 20 ml water, heating same at 60° C. to form NIPAAm solution, and cooling the NIPAAm solution; adding 200 ?l of 98.7 wt % of APS and 50 ?l of 99 wt % of TEMED to the NIPAAm solution, uniformly mixing same, and reacting the mixture for 30 hours to prepare a transparent, gel PNIPAAm; adding 5 mg enzymes to 100 ?l of 1×PBS buffer solution, uniformly mixing same, adding 100 ?l of PNIPAAm to the buffer solution, and uniformly mixing the buffer solution; placing a biosensor on a heater for heating at a constant temperature of 37° C. with the biosensor being an EIS sensor having a sensor membrane formed of EuTixOy; and taking a measurement.

Abstract: A sensing device includes: a semiconductor layer of a field effect semiconductor having upper and lower surfaces; a conductive layer formed on the lower surface of the semiconductor layer; and a sensor layer of an insulator formed on the upper surface of the semiconductor layer. The insulator is made from lanthanide-titanium oxide.

Abstract: A detection method for a sensor membrane formed of EuTixOy as part of a biosensor by using PNIPAAm for wrapping enzymes is provided with adding 1.0 g of NIPAAm powder to 20 ml water, heating same at 60° C. to form NIPAAm solution, and cooling the NIPAAm solution; adding 200 ?l of 98.7 wt % of APS and 50 ?l of 99 wt % of TEMED to the NIPAAm solution, uniformly mixing same, and reacting the mixture for 30 hours to prepare a transparent, gel PNIPAAm; adding 5 mg enzymes to 100 ?l of 1× PBS buffer solution, uniformly mixing same, adding 100 ?l of PNIPAAm to the buffer solution, and uniformly mixing the buffer solution; placing a biosensor on a heater for heating at a constant temperature of 37° C. wherein the biosensor is an EIS sensor having a sensor membrane formed of EuTixOy; and taking a measurement.

Abstract: A sensing device includes: a semiconductor layer of a field effect semiconductor having upper and lower surfaces; a conductive layer formed on the lower surface of the semiconductor layer; and a sensor layer of an insulator formed on the upper surface of the semiconductor layer. The insulator is made from lanthanide-titanium oxide.

Abstract: This invention relates to a method for forming a gate dielectric layer, and, more particularly, to a method for treating a base oxide layer by using a remote plasma nitridation procedure and a thermal annealing treatment in turn to form the gate dielectric layer. The first step of the present invention is to form a base oxide layer on a substrate of a wafer. The base oxide layer can be formed using any kind of method. Then nitrogen ions are introduced into the base oxide layer using the remote plasma nitridation procedure to form a remote plasma nitrided oxide layer. Finally, the wafer is placed in a reaction chamber which comprises oxygen (O2) or nitric monoxide (NO) to treat the remote plasma nitrided oxide layer using the thermal annealing procedure and the gate dielectric layer of the present invention is formed.