Abstract: A semiconductor structure is provided. The semiconductor structure includes a gate structure over a substrate. The semiconductor structure also includes source/drain structures on opposite sides of the gate structure. The semiconductor structure also includes a dielectric layer over the gate structure and the source/drain structures. The semiconductor structure also includes a via plug passing through the dielectric layer and including a first group IV element. The dielectric layer includes a second group IV element, a first compound, and a second compound, and the second compound includes elements in the first compound and the first group IV element.

Abstract: A semiconductor structure is provided. The semiconductor structure includes a gate structure over a substrate. The semiconductor structure also includes source/drain structures on opposite sides of the gate structure. The semiconductor structure also includes a dielectric layer over the gate structure and the source/drain structures. The semiconductor structure also includes a via plug passing through the dielectric layer and including a first group IV element. The dielectric layer includes a second group IV element, a first compound, and a second compound, and the second compound includes elements in the first compound and the first group IV element.

Abstract: A semiconductor structure is provided. The semiconductor structure includes a gate structure over a fin structure. The semiconductor structure also includes a source/drain structure in the fin structure and adjacent to the gate structure. The semiconductor structure also includes a first contact plug over the source/drain structure. The semiconductor structure also includes a first via plug over the first contact plug. The semiconductor structure also includes a dielectric layer surrounding the first via plug. The first via plug includes a first group IV element and the dielectric layer includes the first group IV element and a second group IV element.

Abstract: A semiconductor structure is provided. The semiconductor structure includes a gate structure over a fin structure. The semiconductor structure also includes a source/drain structure in the fin structure and adjacent to the gate structure. The semiconductor structure also includes a first contact plug over the source/drain structure. The semiconductor structure also includes a first via plug over the first contact plug. The semiconductor structure also includes a dielectric layer surrounding the first via plug. The first via plug includes a first group IV element and the dielectric layer includes the first group IV element and a second group IV element.

Abstract: A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a gate structure, a source/drain structure, a first contact plug and a first via plug. The gate structure is positioned over a fin structure. The source/drain structure is positioned in the fin structure and adjacent to the gate structure. The first contact plug is positioned over the source/drain structure. The first via plug is positioned over the first contact plug. The first via plug includes a first group IV element.

Abstract: An expandable photovoltaic submodule comprises an adapter. The adapter comprises: an upper level port, wherein the upper level port comprises a front-positive terminal, a front-negative terminal, a first rear-positive terminal, and a first rear-negative terminal; a lower level port, wherein the lower level port comprises a second rear-positive terminal and a second rear-negative terminal; a first solar cell port, wherein the first solar cell port comprises a cell positive terminal and a cell negative terminal; and a plurality of potential lines coupled to the upper level port, the lower level port, and the first solar cell port, wherein the plurality of potential lines are adapted to series or parallel connections of at least two levels.

Abstract: A combined solar cell module includes a solar cell module, an end connection device, and an output connection device. The solar cell module includes first and second connection portions on opposite sides of a substrate, and connection lines which connect solar cells to the first and second connection portions. The first connection portion has a first holding space. The second connection portion has a second holding space corresponding to the first holding space in an up-and-down manner. First and second connection parts are within the first and second holding spaces respectively. At least one of the first and second connection parts is a magnetic material, and another one is a magnetic material or a magnetically attractable material. The end connection device and the first connection portion are detachable and connectable. The output connection device and the second connection portion are detachable and connectable, for outputting current generated by solar cells.

Abstract: An encapsulation structure and a solar cell module are provided, wherein the encapsulation structure is disposed on the light incident surface of the solar cell module and is consisted of a thermoplastic protective layer, a transparent water-barrier layer, and an adhesive layer. The thermoplastic protective layer is disposed on the outermost layer of the light incident surface, and the material thereof includes thermoplastic polyurethane (TPU), thermoplastic polyolefin (TPO), or thermoplastic elastomer (TPE). The transparent water-barrier layer is disposed between the adhesive layer and the thermoplastic protective layer.

Abstract: A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a gate structure, a source/drain structure, a first contact plug and a first via plug. The gate structure is positioned over a fin structure. The source/drain structure is positioned in the fin structure and adjacent to the gate structure. The first contact plug is positioned over the source/drain structure. The first via plug is positioned over the first contact plug. The first via plug includes a first group IV element.

Abstract: A solar cell structure for wireless charging includes a substrate and at least one thin film solar cell disposed on a surface of the substrate, wherein the thin film solar cell has a winding coil structure. Accordingly, in the thin film solar cell, the electrode which is the winding coil structure may be used as electromagnetic induction coil or millimeter-wave radio wave receiving radiator.

Abstract: A compound-based solar cell including a first electrode, a second electrode, a first type doped semiconductor layer and a second type doped semiconductor layer is provided. The first type doped semiconductor layer is disposed between the first electrode and the second electrode, and the second type doped semiconductor layer is disposed between the first type doped semiconductor layer and the second electrode. The first type doped semiconductor layer has a first side adjacent to the first electrode and a second side adjacent to the second type doped semiconductor layer. The first type doped semiconductor layer includes at least one of a plurality of elements, and the elements include potassium, rubidium and cesium. The concentration of at least one of the elements on the first side is higher than the concentration on the second side. Besides, a manufacturing method of a light absorption layer is also provided.

Abstract: An expandable photovoltaic submodule comprises an adapter. The adapter comprises: an upper level port, wherein the upper level port comprises a front-positive terminal, a front-negative terminal, a first rear-positive terminal, and a first rear-negative terminal; a lower level port, wherein the lower level port comprises a second rear-positive terminal and a second rear-negative terminal; a first solar cell port, wherein the first solar cell port comprises a cell positive terminal and a cell negative terminal; and a plurality of potential lines coupled to the upper level port, the lower level port, and the first solar cell port, wherein the plurality of potential lines are adapted to series or parallel connections of at least two levels.

Abstract: A method for forming a thin film having sulfide single-crystal nanoparticles includes dropping a sulfide precursor solution on the surface of a Group VI absorption layer, and then performing thermal decomposition on the sulfide precursor solution under a predetermined temperature to form a thin film consisting of sulfide single-crystal nanoparticles on the surface of the Group VI absorption layer.

Abstract: A solar cell structure for wireless charging includes a substrate and at least one thin film solar cell disposed on a surface of the substrate, wherein the thin film solar cell has a winding coil structure. Accordingly, in the thin film solar cell, the electrode which is the winding coil structure may be used as electromagnetic induction coil or millimeter-wave radio wave receiving radiator.

Abstract: A sealing film for a solar cell and a method of manufacturing the same, and a sealing structure for a solar cell module having the sealing film for a solar cell are provided. The sealing film for a solar cell includes a substrate and an adhesive layer having a conducting wire structure, wherein the adhesive layer having the conducting wire structure is located on the substrate, and the conducting wire structure is in contact with the substrate. Via the sealing film for a solar cell having the above configuration, a plurality of solar cell units not electrically connected to one another can be electrically connected by using the conducting wire structure of the sealing film for a solar cell while sealing and laminating the solar cell.

Abstract: A compound solar cell includes a substrate, a first electrode located on the substrate, a Group VI absorption layer located on the first electrode, and a second electrode located on the group VI absorption layer. Moreover, a first buffer layer is between the second electrode and the Group VI absorption layer, wherein the first buffer layer is a thin film consisting of sulfide single-crystal nanoparticles.

Abstract: A chemical bath deposition (CBD) apparatus includes a first cap, a second cap, and a solution input/output device. The second cap is arranged corresponding to the first cap so as to form a deposition space. The solution input/output device is located in the first cap so as to feed a solution into/out of the deposition space. The position of the solution input/output device is fixed, or the solution input/output device is movable in the deposition space.

Abstract: The disclosure discloses a method for modifying the light absorption layer, including: (a) providing a substrate; (b) forming a light absorption layer on the substrate, wherein the light absorption layer includes a Group IB element, Group IIIA element and Group VIA element; (c) forming a slurry on the light absorption layer, wherein the slurry includes a Group VIA element; and (d) conducting a thermal process for the light absorption layer with the slurry.

Abstract: The disclosure discloses a method for modifying the light absorption layer, including: (a) providing a substrate; (b) forming a light absorption layer on the substrate, wherein the light absorption layer includes a Group IB element, Group IIIA element and Group VIA element; (c) forming a slurry on the light absorption layer, wherein the slurry includes a Group VIA element; and (d) conducting a thermal process for the light absorption layer with the slurry.

Abstract: A chemical bath deposition (CBD) apparatus includes a first cap, a second cap, and a solution input/output device. The second cap is arranged corresponding to the first cap so as to form a deposition space. The solution input/output device is located in the first cap so as to feed a solution into/out of the deposition space. The position of the solution input/output device is fixed, or the solution input/output device is movable in the deposition space.