Abstract: Provided are a through electrode including an organic side-wall insulating film, capable of eliminating a barrier layer and achieving satisfactory mechanical reliability and electrical reliability and a manufacturing method thereof, and a semiconductor device and a manufacturing method thereof. According to one aspect of the present invention, a through electrode disposed in a semiconductor substrate is provided, including: a copper layer in the semiconductor substrate; and a side-wall insulating film that is disposed between the copper layer and the semiconductor substrate so as to be in contact with the copper layer and the semiconductor substrate, the side-wall insulating film being represented by the following chemical formula (1).

Abstract: Embodiments provided are a through electrode that can be manufactured by a method not including the step of removing a side-wall insulating film formed at the bottom part of the through hole and so having improved electrical characteristics and mechanical reliability and a manufacturing method thereof as well as a semiconductor device and a manufacturing method thereof. A through electrode is disposed in a semiconductor substrate, and includes: a conductive layer; a side-wall insulating film that is disposed between the conductive layer and the semiconductor substrate, the side-wall insulating film being represented by the following chemical formula (1), and a tubular semiconductor layer disposed between the conductive layer and the semiconductor substrate, the semiconductor layer including a same material as the material of the semiconductor substrate.

Abstract: Embodiments provided are a through electrode that can be manufactured by a method not including the step of removing a side-wall insulating film formed at the bottom part of the through hole and so having improved electrical characteristics and mechanical reliability and a manufacturing method thereof as well as a semiconductor device and a manufacturing method thereof. A through electrode is disposed in a semiconductor substrate, and includes: a conductive layer; a side-wall insulating film that is disposed between the conductive layer and the semiconductor substrate, the side-wall insulating film being represented by the following chemical formula (1), and a tubular semiconductor layer disposed between the conductive layer and the semiconductor substrate, the semiconductor layer including a same material as the material of the semiconductor substrate.

Abstract: Provided are a through electrode including an organic side-wall insulating film, capable of eliminating a barrier layer and achieving satisfactory mechanical reliability and electrical reliability and a manufacturing method thereof, and a semiconductor device and a manufacturing method thereof. According to one aspect of the present invention, a through electrode disposed in a semiconductor substrate is provided, including: a copper layer in the semiconductor substrate; and a side-wall insulating film that is disposed between the copper layer and the semiconductor substrate so as to be in contact with the copper layer and the semiconductor substrate, the side-wall insulating film being represented by the following chemical formula (1).