Abstract: The present disclosure relates to a semiconductor device including a semiconductor substrate. A grid structure extends from a first side of the semiconductor substrate to within the semiconductor substrate. An image sensing element is disposed within the semiconductor substrate and is laterally surrounded by the grid structure. A plurality of protrusions are arranged along the first side of the semiconductor substrate. The plurality of protrusions are disposed over the image sensing element and are laterally surrounded by the grid structure. The plurality of protrusions are substantially identical to one another and have a characteristic dimension. An inner surface of the grid structure facing the image sensing element is spaced apart from a point of one of the plurality of protrusions by a predetermined reflective length that is based on the characteristic dimension of the plurality of protrusions.

Abstract: The present disclosure relates to a semiconductor device including a semiconductor substrate. A grid structure extends from a first side of the semiconductor substrate to within the semiconductor substrate. An image sensing element is disposed within the semiconductor substrate and is laterally surrounded by the grid structure. A plurality of protrusions are arranged along the first side of the semiconductor substrate. The plurality of protrusions are disposed over the image sensing element and are laterally surrounded by the grid structure. The plurality of protrusions are substantially identical to one another and have a characteristic dimension. An inner surface of the grid structure facing the image sensing element is spaced apart from a point of one of the plurality of protrusions by a predetermined reflective length that is based on the characteristic dimension of the plurality of protrusions.

Abstract: Various embodiments of the present disclosure are directed towards an integrated chip including a plurality of semiconductor devices arranged on a substrate and within a device region. A first isolation structure is arranged in the device region and laterally between adjacent semiconductor devices in the plurality of semiconductor devices. An interconnect structure underlies the substrate and includes a topmost conductive interconnect element adjacent to the substrate. A second isolation structure is disposed in the substrate and around the device region. A bottom surface of the second isolation structure is above a lower surface of the topmost conductive interconnect element.

Abstract: The present disclosure, in some embodiments, relates to a method of forming an integrated chip. The method includes forming a masking layer on a first side of a substrate. A first etching process is performed on the first side of the substrate with the masking layer in place. The masking layer is removed. A second wet etching process is performed on the first side of the substrate after removing the masking layer. The first etching process and the second wet etching process collectively form a plurality of topographical features respectively having a triangular shape in a cross-section.

Abstract: The present disclosure, in some embodiments, relates to an image sensor integrated chip. The image sensor integrated chip includes a semiconductor substrate. One or more isolation structures are arranged within one or more trenches in the semiconductor substrate. The one or more trenches are disposed along opposing sides of a photo diode region within the semiconductor substrate. The semiconductor substrate includes an undulating exterior having rounded corners arranged laterally between neighboring ones of a plurality of flat surfaces. The rounded corners and the plurality of flat surfaces forming a plurality of triangular shaped protrusions arranged between the one or more isolation structures, as viewed along a cross-sectional view.

Abstract: Various embodiments of the present disclosure are directed towards a method for forming a semiconductor device, the method including forming a plurality of photodetectors in a substrate. A device isolation structure is formed within the substrate. The device isolation structure laterally wraps around the plurality of photodetectors. An outer isolation structure is formed within the substrate. The device isolation structure is spaced between sidewalls of the outer isolation structure. The device isolation structure and the outer isolation structure comprise a dielectric material.

Abstract: The present disclosure, in some embodiments, relates to an image sensor integrated chip. The image sensor integrated chip includes a semiconductor substrate. One or more isolation structures are arranged within one or more trenches in the semiconductor substrate. The one or more trenches are disposed along opposing sides of a photo-diode region within the semiconductor substrate. The semiconductor substrate includes an undulating exterior having rounded corners arranged laterally between neighboring ones of a plurality of flat surfaces. The rounded corners and the plurality of flat surfaces forming a plurality of triangular shaped protrusions arranged between the one or more isolation structures, as viewed along a cross-sectional view.

Abstract: The present disclosure, in some embodiments, relates to an image sensing integrated chip. The image sensing integrated chip includes a semiconductor substrate having sidewalls defining one or more trenches on opposing sides of a region of the semiconductor substrate. One or more dielectrics are disposed within the one or more trenches. The semiconductor substrate has a plurality of flat surfaces arranged between the one or more trenches. Adjacent ones of the plurality of flat surfaces define a plurality of triangular shaped protrusions and alternative ones of the plurality of flat surfaces are substantially parallel to one another, as viewed along a cross-sectional view.

Abstract: Various embodiments of the present disclosure are directed towards a method for forming a semiconductor device, the method including forming a plurality of photodetectors in a substrate. A device isolation structure is formed within the substrate. The device isolation structure laterally wraps around the plurality of photodetectors. An outer isolation structure is formed within the substrate. The device isolation structure is spaced between sidewalls of the outer isolation structure. The device isolation structure and the outer isolation structure comprise a dielectric material.

Abstract: Various embodiments of the present disclosure are directed towards a semiconductor structure including a crack-stop structure disposed within a semiconductor substrate. The semiconductor substrate has a back-side surface and a front-side surface opposite the back-side surface. Photodetectors are disposed within the semiconductor substrate and are laterally spaced within a device region. An interconnect structure is disposed along the front-side surface. The interconnect structure includes a seal ring structure. A crack-stop structure is disposed within the semiconductor substrate and overlies the seal ring structure. The crack-stop structure continuously extends around the device region.

Abstract: The present disclosure relates to a semiconductor device including a semiconductor substrate. A grid structure extends from a first side of the semiconductor substrate to within the semiconductor substrate. An image sensing element is disposed within the semiconductor substrate and is laterally surrounded by the grid structure. A plurality of protrusions are arranged along the first side of the semiconductor substrate. The plurality of protrusions are disposed over the image sensing element and are laterally surrounded by the grid structure. The plurality of protrusions are substantially identical to one another and have a characteristic dimension. An inner surface of the grid structure facing the image sensing element is spaced apart from a point of one of the plurality of protrusions by a predetermined reflective length that is based on the characteristic dimension of the plurality of protrusions.

Abstract: The present disclosure, in some embodiments, relates to an image sensing integrated chip. The image sensing integrated chip includes a semiconductor substrate having sidewalls defining one or more trenches on opposing sides of a region of the semiconductor substrate. One or more dielectrics are disposed within the one or more trenches. The semiconductor substrate has a plurality of flat surfaces arranged between the one or more trenches. Adjacent ones of the plurality of flat surfaces define a plurality of triangular shaped protrusions and alternative ones of the plurality of flat surfaces are substantially parallel to one another, as viewed along a cross-sectional view.

Abstract: The present disclosure relates to a semiconductor device having a lateral resonance structure to coherently reflect light toward the image sensor. The semiconductor device includes an image sensing element arranged within a substrate. A radiation absorption region is arranged within the substrate and above the image sensor, and contains an array of protrusions having a characteristic dimension and an outer border. A resonant structure containing a plurality of deep trench isolation (DTI) structures is disposed on opposing sides of the image sensing element. The (DTI) structures surround the outer border of the array of protrusions. An inner surface of the DTI structure is laterally spaced apart from the outer border of the array of protrusions by a reflective length based on the characteristic dimension of the array of protrusions, thus affecting coherent reflection of light back toward the image sensor.

Abstract: The present disclosure, in some embodiments, relates to an integrated chip. The integrated chip includes an image sensing element disposed within a pixel region of a substrate. A plurality of conductive interconnect layers are disposed within a dielectric structure arranged along a first side of the substrate. A second side of the substrate includes a plurality of interior surfaces arranged directly over the image sensing element. The plurality of interior surfaces respectively include a substantially flat surface that extends along a plane.

Abstract: Various embodiments of the present disclosure are directed towards a semiconductor structure including a crack-stop structure disposed within a semiconductor substrate. The semiconductor substrate has a back-side surface and a front-side surface opposite the back-side surface. Photodetectors are disposed within the semiconductor substrate and are laterally spaced within a device region. An interconnect structure is disposed along the front-side surface. The interconnect structure includes a seal ring structure. A crack-stop structure is disposed within the semiconductor substrate and overlies the seal ring structure. The crack-stop structure continuously extends around the device region.

Abstract: The present disclosure, in some embodiments, relates to an integrated chip. The integrated chip includes an image sensing element disposed within a pixel region of a substrate. A plurality of conductive interconnect layers are disposed within a dielectric structure arranged along a first side of the substrate. A second side of the substrate includes a plurality of interior surfaces arranged directly over the image sensing element. The plurality of interior surfaces respectively include a substantially flat surface that extends along a plane.

Abstract: The present disclosure relates to a semiconductor device having a lateral resonance structure to coherently reflect light toward the image sensor. The semiconductor device includes an image sensing element arranged within a substrate. A radiation absorption region is arranged within the substrate and above the image sensor, and contains an array of protrusions having a characteristic dimension and an outer border. A resonant structure containing a plurality of deep trench isolation (DTI) structures is disposed on opposing sides of the image sensing element. The (DTI) structures surround the outer border of the array of protrusions. An inner surface of the DTI structure is laterally spaced apart from the outer border of the array of protrusions by a reflective length based on the characteristic dimension of the array of protrusions, thus affecting coherent reflection of light back toward the image sensor.

Abstract: A CMOS image sensor and a method of forming are provided. The CMOS image sensor may include a device wafer. A conductive feature may be formed on a back-side surface of the device wafer. The device wafer may include a pixel formed therein. A passivation layer may be formed over the back-side surface of the device wafer and the conductive feature. A grid film may be formed over the passivation layer. The grid film may be patterned to accommodate a color filter. The grid film pattern may align the color filter to corresponding pixel in the device wafer. A portion of the grid film formed over the conductive feature may be reduced to be substantially planar with portions of the grid film adjacent to the conductive feature. The patterning and reducing may be performed according to etching processes, chemical mechanical processes, and combinations thereof.

Abstract: Semiconductor devices, image sensors, and methods of manufacture thereof are disclosed. In some embodiments, a semiconductor device includes a high dielectric constant (k) insulating material disposed over a workpiece, the high k insulating material having a dielectric constant of greater than about 3.9. A barrier layer is disposed over the high k insulating material. A buffer oxide layer including a porous oxide film is disposed between the high k insulating material and the barrier layer. The porous oxide film has a first porosity, and the barrier layer or the high k insulating material has a second porosity. The first porosity is greater than the second porosity.

Abstract: A CMOS image sensor and a method of forming are provided. The CMOS image sensor may include a device wafer. A conductive feature may be formed on a back-side surface of the device wafer. The device wafer may include a pixel formed therein. A passivation layer may be formed over the back-side surface of the device wafer and the conductive feature. A grid film may be formed over the passivation layer. The grid film may be patterned to accommodate a color filter. The grid film pattern may align the color filter to corresponding pixel in the device wafer. A portion of the grid film formed over the conductive feature may be reduced to be substantially planar with portions of the grid film adjacent to the conductive feature. The patterning and reducing may be performed according to etching processes, chemical mechanical processes, and combinations thereof.