Abstract: Methods for manufacturing a display device are provided. The methods include providing a plurality of light-emitting units and a substrate. The methods also include transferring the light-emitting units to a transfer head. The methods further include attaching at least one of the plurality of light-emitting units on the transfer head to the substrate by a bonding process, wherein the transfer head and the substrate satisfy the following equation during the bonding process: 0 ? ? ? T ? ? 1 T ? ? 2 ? A ? ( T ) ? dT - ? T ? ? 1 T ? ? 3 ? E ? ( T ) ? dT ? ? < 0.01 wherein A(T) is the coefficient of thermal expansion of the transfer head, E(T) is the coefficient of thermal expansion of the substrate, T1 is room temperature, T2 is the temperature of the transfer head, and T3 is the temperature of the substrate.

Abstract: A method for manufacturing a semiconductor device is provided. The method includes forming a plurality of light-emitting elements on a first substrate and forming a first pattern array on a second substrate, wherein the first pattern array includes an adhesive layer. The method also includes transferring the plurality of light-emitting elements from the first substrate to the second substrate and forming the first pattern array on a third substrate. The method includes transferring the plurality of light-emitting elements from the second substrate to the third substrate, and reducing an adhesion force of a portion of the adhesive layer. The method also includes forming a second pattern array on a fourth substrate, and transferring the plurality of light-emitting elements from the third substrate to the fourth substrate. The pitch between the plurality of light-emitting elements on the first substrate is different than the pitch of the first pattern array.

Abstract: A method for manufacturing a semiconductor device is provided. The method includes forming a plurality of diodes on a first substrate and forming a first pattern array on a second substrate. The method also includes transferring the plurality of diodes from the first substrate to the second substrate. The method further includes forming the first pattern array on a third substrate. In addition, the method includes transferring the plurality of diodes from the second substrate to the third substrate. The method also includes forming a second pattern array on a fourth substrate. The method further includes transferring the plurality of diodes from the third substrate to the fourth substrate. The pitch between the plurality of diodes on the first substrate is different from the pitch of the first pattern array.

Abstract: A structure of phosphorous-containing functionalized poly(arylene ether), a preparation method thereof, and a composition prepared therefrom are provided. The curable (cross-linkable) composition includes an unsaturated monomer and a phosphorous-containing functionalized poly(arylene ether) having a polymerizable group and a molecular weight between 500 and 20,000. The composition provides excellent fluidity and fast curing rate. After curing, the composition exhibits excellent low dielectric coefficient and dielectric loss, high heat resistance and flame retardancy. It is suitable for prepregs, laminated sheets for printed circuits or the like.

Abstract: A structure of phosphorous-containing functionalized poly(arylene ether), a preparation method thereof, and a composition prepared therefrom are provided. The curable (cross-linkable) composition includes an unsaturated monomer and a phosphorous-containing functionalized poly(arylene ether) having a polymerizable group and a molecular weight between 500 and 20,000. The composition provides excellent fluidity and fast curing rate. After curing, the composition exhibits excellent low dielectric coefficient and dielectric loss, high heat resistance and flame retardancy. It is suitable for prepregs, laminated sheets for printed circuits or the like.

Abstract: A structure of phosphorous-containing functionalized poly(arylene ether), a preparation method thereof, and a composition prepared therefrom are provided. The curable (cross-linkable) composition includes an unsaturated monomer and a phosphorous-containing functionalized poly(arylene ether) having a polymerizable group and a molecular weight between 500 and 20,000. The composition provides excellent fluidity and fast curing rate. After curing, the composition exhibits excellent low dielectric coefficient and dielectric loss, high heat resistance and flame retardancy. It is suitable for prepregs, laminated sheets for printed circuits or the like.

Abstract: The present disclosure provides a phosphor-containing phenol formaldehyde resin compound having a general formula (I): The compound is formed of a phenol formaldehyde resin and an aromatic phosphate compound by performing a condensation reaction, which may be used as a curing agent of an epoxy resin. The phenol formaldehyde resin is formed of a phenolic compound, a bisphenol compound and formaldehyde. The present disclosure further provides a phosphor-containing phenol formaldehyde resin cured material which is formed of the phosphor-containing phenol formaldehyde resin compound and an epoxy resin under a high temperature. The phosphor-containing phenol formaldehyde resin compound is added separately or mixed with an epoxy resin curing agent.

Abstract: A phosphorus-containing polyester composite and method of manufacturing the same is related to the field of compound formulation. The composite is prepared by condensation under certain conditions of (A) a poly-functional phosphorus-containing aromatic hydroxy compound; (B) a difunctional aromatic acryl chloride compound and (C) a monofunctional aromatic phenol compound used as a blocking agent. The composite is used as a curing agent for epoxy. The phosphorus-containing polyester composite is reacted with the epoxy group of the epoxy to obtain non-halogen and flame-retardant cured composite being environment friendly and having low dielectric, low dielectric loss factor and high heat resistance. It can be used in an integrated circuit board and used as a semiconductor packaging material.

Abstract: A composite, a high-frequency circuit substrate using the same and method thereof are discussed. The composite includes the following solid components: a DOPO (9,10-dihydro-9-oxa-10-phosphaphenanthrene 10-oxide) derivative compound of 10-70 wt %, a curing agent of 10-50 wt %, one or more epoxy of 10-90 wt % and an inorganic filling material of 10-40 wt %. The non-halogen low dielectric epoxy composite uses a high-purity DOPO (9,10-dihydro-9-oxa-10-phosphaphenanthrene 10-oxide) derivative as tiny particles dispersing in the composite. The crosslinking yield of the composite is not reduced, while the heat resistance and flame retardancy are increased. The prepreg and copper foil covered laminate for use in printed circuit board, made from the epoxy composite, has great dielectric property and high glass transition temperature (GTT), satisfying the need of high frequency in electronic signal transmission and high speed in data processing of the industry of copper covered printed circuit board.

Abstract: A chipset with light energy harvester, includes a substrate, a functional element layer, and a light energy harvesting layer, both are stacked vertically on the substrate, and an interconnects connected between the functional element layer and the light energy harvesting layer.

Abstract: A phosphorus-containing polyester composite and method of manufacturing the same is related to the field of compound formulation. The composite is prepared by condensation under certain conditions of (A) a poly-functional phosphorus-containing aromatic hydroxy compound; (B) a difunctional aromatic acryl chloride compound and (C) a monofunctional aromatic phenol compound used as a blocking agent. The composite is used as a curing agent for epoxy. The phosphorus-containing polyester composite is reacted with the epoxy group of the epoxy to obtain non-halogen and flame-retardant cured composite being environment friendly and having low dielectric, low dielectric loss factor and high heat resistance. It can be used in an integrated circuit board and used as a semiconductor packaging material.

Abstract: A phosphorus-containing polyester composite and method of manufacturing the same is related to the field of compound formulation. The composite is prepared by condensation under certain conditions of (A) a poly-functional phosphorus-containing aromatic hydroxy compound; (B) a difunctional aromatic acryl chloride compound and (C) a monofunctional aromatic phenol compound used as a blocking agent. The composite is used as a curing agent for epoxy. The phosphorus-containing polyester composite is reacted with the epoxy group of the epoxy to obtain non-halogen and flame-retardant cured composite being environment friendly and having low dielectric, low dielectric loss factor and high heat resistance. It can be used in an integrated circuit board and used as a semiconductor packaging material.

Abstract: A chipset with light energy harvester, includes a substrate, a functional element layer, and a light energy harvesting layer, both are stacked vertically on the substrate, and an interconnects connected between the functional element layer and the light energy harvesting layer.

Abstract: A transistor device structure includes a substrate, a first polycrystalline semiconductor thin film and a first transistor unit. The first polycrystalline semiconductor thin film is disposed on the substrate. A grain diameter of the first polycrystalline semiconductor thin film is greater than 1 micrometer and a thickness of the first polycrystalline semiconductor thin film is less than three hundredths of the grain diameter. The first transistor unit is disposed on the first polycrystalline semiconductor thin film and includes a first gate dielectric layer and a first gate structure. The first gate dielectric layer is disposed on a surface of the first polycrystalline thin film semiconductor. The first gate structure is disposed on a surface of the first gate dielectric layer.

Abstract: A phosphorus-containing polyester composite and method of manufacturing the same is related to the field of compound formulation. The composite is prepared by condensation under certain conditions of (A) a poly-functional phosphorus-containing aromatic hydroxy compound; (B) a difunctional aromatic acryl chloride compound and (C) a monofunctional aromatic phenol compound used as a blocking agent. The composite is used as a curing agent for epoxy. The phosphorus-containing polyester composite is reacted with the epoxy group of the epoxy to obtain non-halogen and flame-retardant cured composite being environment friendly and having low dielectric, low dielectric loss factor and high heat resistance. It can be used in an integrated circuit board and used as a semiconductor packaging material.

Abstract: A structure of phosphorous-containing functionalized poly(arylene ether), a preparation method thereof, and a composition prepared therefrom are provided. The curable (cross-linkable) composition includes an unsaturated monomer and a phosphorous-containing functionalized poly(arylene ether) having a polymerizable group and a molecular weight between 500 and 20,000. The composition provides excellent fluidity and fast curing rate. After curing, the composition exhibits excellent low dielectric coefficient and dielectric loss, high heat resistance and flame retardancy. It is suitable for prepregs, laminated sheets for printed circuits or the like.

Abstract: A composite, a high-frequency circuit substrate using the same and method thereof are discussed. The composite includes the following solid components: a DOPO (9,10-dihydro-9-oxa-10-phosphaphenanthrene 10-oxide) derivative compound of 10-70 wt %, a curing agent of 10-50 wt %, one or more epoxy of 10-90 wt % and an inorganic filling material of 10-40 wt %. The non-halogen low dielectric epoxy composite uses a high-purity DOPO (9,10-dihydro-9-oxa-10-phosphaphenanthrene 10-oxide) derivative as tiny particles dispersing in the composite. The crosslinking yield of the composite is not reduced, while the heat resistance and flame retardancy are increased. The prepreg and copper foil covered laminate for use in printed circuit board, made from the epoxy composite, has great dielectric property and high glass transition temperature (GTT), satisfying the need of high frequency in electronic signal transmission and high speed in data processing of the industry of copper covered printed circuit board.

Abstract: A transistor device structure includes a substrate, a first transistor layer and a second transistor layer. The second transistor layer is disposed between the substrate and the first transistor layer. The first transistor layer includes an insulating structure and a first transistor unit. The insulating structure is disposed on the second transistor layer and has a protruding portion. The first transistor unit includes a gate structure, a source/drain structure, an embedded source/drain structure and a channel. The source/drain structure is disposed beside the gate structure and over the insulating structure. The embedded source/drain structure is disposed underneath the source/drain structure and in the insulating structure. The channel is defined between the protruding portion and the gate structure.

Abstract: The present disclosure provides a phosphor-containing phenol formaldehyde resin compound having a general formula (I): The compound is formed of a phenol formaldehyde resin and an aromatic phosphate compound by performing a condensation reaction, which may be used as a curing agent of an epoxy resin. The phenol formaldehyde resin is formed of a phenolic compound, a bisphenol compound and formaldehyde. The present disclosure further provides a phosphor-containing phenol formaldehyde resin cured material which is formed of the phosphor-containing phenol formaldehyde resin compound and an epoxy resin under a high temperature. The phosphor-containing phenol formaldehyde resin compound is added separately or mixed with an epoxy resin curing agent.

Abstract: A transistor device structure includes a substrate, a first polycrystalline semiconductor thin film and a first transistor unit. The first polycrystalline semiconductor thin film is disposed on the substrate. A grain diameter of the first polycrystalline semiconductor thin film is greater than 1 micrometer and a thickness of the first polycrystalline semiconductor thin film is less than three hundredths of the grain diameter. The first transistor unit is disposed on the first polycrystalline semiconductor thin film and includes a first gate dielectric layer and a first gate structure. The first gate dielectric layer is disposed on a surface of the first polycrystalline thin film semiconductor. The first gate structure is disposed on a surface of the first gate dielectric layer.