Abstract: The present invention relates to a reaction platform, which comprises: a machine body with a bottom plate for placing non-porous substrates; and a coater module configured on the top of the machine body and capable of maintaining a preset of a predetermined height for moving along the surface of non-porous substrate, wherein the coater module has one or more slits, and a target liquid can be directly injected or sucking in from the outside of the coater module through the slit, and spreading the target liquid onto a surface of the non-porous substrate while moving along the non-porous substrate; wherein the surface of the non-porous substrate has a target to be coated. The reaction platform of the present invention can not only save time, labor and cost, but also have accurate and reproducible experimental results, showing better results than traditional methods.

Abstract: A monitoring system includes an image capturing device arranged to generate an image data of a scene; and a coordinate generating device arranged to calculate a coordinate of an object in the scene according to the image data.

Abstract: A monitoring system includes an image capturing device arranged to generate an image data of a scene; and a coordinate generating device arranged to calculate a coordinate of an object in the scene according to the image data.

Abstract: A monitoring apparatus includes: a first operational device arranged to perform a first predetermined function and accordingly transmit a first instruction signal; a second operational device arranged to receive a second instruction signal and accordingly perform a second predetermined function; a first monitoring device coupled to the first operational device for generating a first detecting event according to an operation of the first operational device; and a second monitoring device coupled to the second operational device for generating a second detecting event according to the operation of the second operational device. The first monitoring device is wirelessly coupled to the second monitoring device, and the first detecting event and the second detecting event are used to determine if the first operational device and the second operational device perform the first predetermined function and the second predetermined function respectively.

Abstract: A modular light control device and a dimming control system are disclosed. The modular light control device comprises a power conversion module, an output module and a control module. The power conversion module has a conversion circuit and a first recognition unit. The conversion circuit receives a power source and converts the power source into a power signal. The output module has an output circuit and a second recognition unit. When the control module is electrically connected with the power conversion module and the output module, the control module distinguishes configurations of the power conversion module and the output module through the first recognition unit and the second recognition unit, respectively, and outputs a control signal according to the configuration of the output module, and the output circuit outputs a driving signal to drive a lamp according to the power signal and the control signal.

Abstract: The invention relates to a driving circuit comprising a first bridge circuit, a second bridge circuit, a first protection device and a second protection device. The first bridge circuit comprising a first positive input terminal, a first negative input terminal, a first positive output terminal and a first negative output terminal is coupled to an AC voltage source to output a first voltage. The second bridge circuit comprising a second positive input terminal, a second negative input terminal, a second positive output terminal and a second negative output terminal is coupled to the AC voltage source to output a second voltage. The second and the first negative output terminals are both coupled to the ground potential. The first protection device is coupled between the second positive input terminal and the AC voltage source. The second protection device is coupled between the second negative input terminal and the AC voltage source.

Abstract: An embodiment of the invention provides a lamp comprising a first emitting device, a second emitting device, and a control signal generation device. The control signal generation device generates a first control signal and a second control signal to control the first emitting device and the second emitting device, so that a first light flux generated by the first emitting device is equivalent to a second light flux generated by the second emitting device, wherein the second control signal is generated according to the first control signal.

Abstract: An embodiment of the invention provides a lamp comprising a control circuit and a light emitting device. The light emitting device comprises a plurality of light emitting units with different wavelengths. The control circuit calibrates a control signal according to an environment light to adjust a light spectrum of the light emitting device by controlling the luminance of each light emitting unit.

Abstract: A displaying device includes a substrate, a gate electrode formed on the substrate, a gate insulating layer, a gate a-Si region covering the gate electrode, a source metal region, a drain metal region, a data-line (DL) metal region, a passivation layer and a conductive layer. The gate a-Si region is formed on the gate insulating layer. The source and drain metal regions are formed on the gate a-Si region. The DL metal region is formed on the gate insulating layer and separated from the drain metal region at an interval. The passivation layer formed on the gate insulating layer covers the source, drain, and DL metal regions. The first and second vias of the passivation layer expose partial surfaces of the DL and drain metal regions respectively. The conductive layer formed on the passivation layer covers the first and second vias for electrically connecting the DL and drain metal regions.

Abstract: A light system includes a lamp, a user operation interface, a control unit and a communication unit. The user operation interface is adapted to be used by a user to select a brightness value or a color temperature value, wherein the user operation interface includes a display unit and a touch control unit. The display unit is used to output a graphical interface. The touch control unit is used to detect a touch action upon the graphical interface of the display unit. The control unit is electrically connected to the user operation interface for receiving and processing a selection of the brightness value or the color temperature value from the user operation interface. The communication unit is electrically connected to the control unit for transmitting the selection of the brightness value or the color temperature value to the lamp via a wireless protocol.

Abstract: An active array substrate, an electrode substrate, and a liquid crystal display panel (LCD) are provided. The LCD includes an active array substrate, an electrode substrate, and a liquid crystal layer. The active array substrate includes a base, a plurality of scan lines and data lines disposed on the base, a plurality of pixel electrodes, and a plurality of active devices. Each of the active devices is electrically connected to the corresponding scan line, date line, and pixel electrode to define a pixel region and a non-display region. The electrode substrate includes a base and a common electrode disposed on the base of the electrode substrate. The liquid crystal layer is formed between the active array substrate and the electrode substrate and includes liquid molecules with a threshold voltage, a saturation voltage and ions located in the non-display region.

Abstract: A method of fabricating a thin film transistor (TFT) is provided. The method comprises the steps of providing a substrate with a gate electrode formed thereon; forming an insulating layer on the substrate and covering the gate electrode; forming an intrinsic amorphous silicon layer (intrinsic a-Si layer) on the insulating layer; forming an etch-stop layer on the intrinsic amorphous silicon layer, and the etch-stop layer positioned correspondingly to the gate electrode; treating the etch-stop layer to form an oxide layer, and the oxide layer covering the etch-stop layer; forming a n+ a-Si layer above the intrinsic amorphous silicon layer, and the n+ a-Si layer covering partial surface of the etch-stop layer and the oxide layer separating a sidewall of the etch-stop layer and the n+ a-Si layer; and forming a conductive layer on the n+ a-Si layer.

Abstract: A method of fabricating a thin film transistor (TFT) is provided. The method comprises the steps of providing a substrate with a gate electrode formed thereon; forming an insulating layer on the substrate and covering the gate electrode; forming an intrinsic amorphous silicon layer (intrinsic a-Si layer) on the insulating layer; forming an etch-stop layer on the intrinsic amorphous silicon layer, and the etch-stop layer positioned correspondingly to the gate electrode; treating the etch-stop layer to form an oxide layer, and the oxide layer covering the etch-stop layer; forming a n+ a-Si layer above the intrinsic amorphous silicon layer, and the n+ a-Si layer covering partial surface of the etch-stop layer and the oxide layer separating a sidewall of the etch-stop layer and the n+ a-Si layer; and forming a conductive layer on the n+ a-Si layer.

Abstract: In a thin film transistor (TFT) structure, formation of a spacer layer is used for isolating the NI junction from an insulating layer comprising a nitride, so as to decrease the amount of current leakage and improve the electric characteristics of TFT. In a back-channel etching (BCE) type TFT device, the spacer layer (comprising an oxide layer) is substantially formed at the sidewalls of the channel regions to isolate the insulating layer (comprising silicon nitride) from the NI junctions. In an etch-stop TFT device, the spacer layer (comprising an oxide layer) is substantially formed at the sidewalls of the etch-stop layer to isolate the insulating layer (i.e. etch-stop layer) from the NI junctions.

Abstract: In a thin film transistor (TFT) structure, formation of a spacer layer is used for isolating the NI junction from an insulating layer comprising a nitride, so as to decrease the amount of current leakage and improve the electric characteristics of TFT. In a back-channel etching (BCE) type TFT device, the spacer layer (comprising an oxide layer) is substantially formed at the sidewalls of the channel regions to isolate the insulating layer (comprising silicon nitride) from the NI junctions. In an etch-stop TFT device, the spacer layer (comprising an oxide layer) is substantially formed at the sidewalls of the etch-stop layer to isolate the insulating layer (i.e. etch-stop layer) from the NI junctions.

Abstract: In a thin film transistor (TFT) structure, formation of a spacer layer is used for isolating the NI junction from an insulating layer comprising a nitride, so as to decrease the amount of current leakage and improve the electric characteristics of TFT. In a back-channel etching (BCE) type TFT device, the spacer layer (comprising an oxide layer) is substantially formed at the sidewalls of the channel regions to isolate the insulating layer (comprising silicon nitride) from the NI junctions. In an etch-stop TFT device, the spacer layer (comprising an oxide layer) is substantially formed at the sidewalls of the etch-stop layer to isolate the insulating layer (i.e. etch-stop layer) from the NI junctions.

Abstract: An active array substrate, an electrode substrate, and a liquid crystal display panel (LCD) are provided. The LCD includes an active array substrate, an electrode substrate, and a liquid crystal layer. The active array substrate includes a base, a plurality of scan lines and data lines disposed on the base, a plurality of pixel electrodes, and a plurality of active devices. Each of the active devices is electrically connected to the corresponding scan line, date line, and pixel electrode to define a pixel region and a non-display region. The electrode substrate includes a base and a common electrode disposed on the base of the electrode substrate. The liquid crystal layer is formed between the active array substrate and the electrode substrate and includes liquid molecules with a threshold voltage, a saturation voltage and ions located in the non-display region.

Abstract: A displaying device includes a substrate, a gate electrode formed on the substrate, a gate insulating layer, a gate a-Si region covering the gate electrode, a source metal region, a drain metal region, a data-line (DL) metal region, a passivation layer and a conductive layer. The gate a-Si region is formed on the gate insulating layer. The source and drain metal regions are formed on the gate a-Si region. The DL metal region is formed on the gate insulating layer and separated from the drain metal region at an interval. The passivation layer formed on the gate insulating layer covers the source, drain, and DL metal regions. The first and second vias of the passivation layer expose partial surfaces of the DL and drain metal regions respectively. The conductive layer formed on the passivation layer covers the first and second vias for electrically connecting the DL and drain metal regions.

Abstract: A contact structure and manufacturing method thereof is provided. A substrate having a first conductive layer and a dielectric layer thereon is provided. The dielectric layer has a contact opening that exposes a portion of the first conductive layer. A conductive nano-particle layer is formed on the exposed surface of the first conductive layer. Thereafter, a second conductive layer is formed inside the contact opening to cover the conductive nano-particle layer and form a contact structure. The conductive nano-particle layer at the bottom of the contact prevents the second conductive layer from peeling off and costs much less to produce.

Abstract: A contact structure and manufacturing method thereof is provided. A substrate having a first conductive layer and a dielectric layer thereon is provided. The dielectric layer has a contact opening that exposes a portion of the first conductive layer. A conductive nano-particle layer is formed on the exposed surface of the first conductive layer. Thereafter, a second conductive layer is formed inside the contact opening to cover the conductive nano-particle layer and form a contact structure. The conductive nano-particle layer at the bottom of the contact prevents the second conductive layer from peeling off and costs much less to produce.