Abstract: A pixel driving circuit, driving method thereof, an array substrate and display apparatus, the pixel driving circuit comprises: a data line for providing a data voltage; a gate line for providing a scanning voltage; a first power supply line for providing a first power supply voltage; a second power supply line for providing a second power supply voltage; a light emitting device connected to the second power supply line; a driving transistor connected to the first power supply line; a storage capacitor having a first terminal connected to a gate of the driving transistor and configured to transfer information including the data voltage to the gate of the driving transistor; a resetting unit configured to reset a voltage across the storage capacitor as a predetermined signal voltage; a data writing unit configured to write information including the data voltage into the second terminal of the storage capacitor; a compensating unit configured to write information including a threshold voltage of the driving tra

Abstract: An OLED pixel driving circuit, a driving method, and an OLED display apparatus are provided.

Abstract: The disclosure relates to a field of display technology and discloses an array substrate and a display device, which improves quality of a displaying picture of a display device. The array substrate includes a plurality of pixel units arranged in an array, sub-pixels of each pixel unit are arranged in an ACBC-type array or a Delta-type array. The array substrate further includes a set of data lines configured to output data signals to the sub-pixels of the plurality of pixel units, the set of data lines each drives the sub-pixels of the same color. Compared with the prior art, the technical solution of the present disclosure avoids displaying errors caused by different corresponding relationship curves between the data output signals and the pixel grey levels for different colors, thereby improving quality of a displaying picture of a display device including the array substrate.

Abstract: There provide a pixel driving circuit and driving method thereof, an array substrate and display apparatus, wherein the pixel driving circuit comprises: a data line; a gate line; a first power supply line; a second power supply line; a light emitting device connected to the second power supply line; a driving transistor connected to the first power supply line; a storage capacitor having a first terminal connected to a gate of the driving transistor and configured to transfer information including the data voltage to the gate of the driving transistor; a resetting unit configured to reset a voltage across the storage capacitor as a predetermined signal voltage; a data writing unit configured to write information including the data voltage into the second terminal of the storage capacitor; a compensating unit configured to write information including a threshold voltage of the driving transistor and information of the first power supply voltage into the first terminal of the storage capacitor; and a light emit

Abstract: A shift register and its driving method, a gate driving circuit, and a display apparatus, the shift register includes an input module (1), an output module (2) and an output control module (3); the output module (2) includes a first output unit (21) and a second output unit (22); and the output control module (3) comprises a first control unit (31) and a second control unit (32), the first control unit (31) controls the level of the first node (P), and the second control unit (32) controls the level of the second node (Q). The technical solutions of the present disclosure can diminish influence of the changing of the clock signal associated with the output module on the output signal, and improve the output effect of the shift register.

Abstract: Provided are a shift register and a driving method thereof, a shift scanning circuit, and a display apparatus. The shift register comprises an input switch unit, an inverting unit, an output switch unit, and a first node voltage maintaining unit. The input switch unit has an output terminal (O) connected to a first node (N1). The first node voltage maintaining unit has a voltage stabilizing terminal connected to the first node (N1), and is adapted to record a level at the first node (N1) when the input switch unit is turned on, and to maintain the recorded level at an input terminal (I) of the inverting unit when the input switch unit is turned off. The inverting unit has an output terminal (O) connected to a second node (N2). The output switch unit has a control terminal (CON) connected to the second node (N2), and is turned on according to a state of a level at the second node.

Abstract: This disclosure relates to a display panel, an organic light emitting diode display and a display device comprising the display panel. The display panel according to one aspect of this disclosure comprises a plurality of pixels each comprising a first sub-pixel, a second sub-pixel and a third sub-pixel, wherein the first sub-pixel and the second sub-pixel are arranged in the row direction, the first sub-pixel in each pixel is adjacent to the first sub-pixel in a pixel adjacent in the row direction, the second sub-pixel in each pixel is adjacent to the second sub-pixel in another pixel adjacent in the row direction, the geometrical center of the third sub-pixel in each pixel is distributed uniformly on the display panel. By means of the display panel of this disclosure, the area of the light emitting area in the pixel can be increased, the aperture ratio can be improved, so as to realize high display quality.

Abstract: The present invention relates to liquid crystal display manufacturing technology. There provides a display drive signal compensating method, comprising the steps of: acquiring an original drive signal of every row of input pixels in a display; determining a position of the row of input pixels, based on the original drive signal; generating a compensation signal for compensating the original drive signal, based on a transmission line internal resistance at the position of the row of input pixels; and outputting a superposed signal obtained by superposing the compensation signal on the original drive signal to the row of input pixels. This method can compensates a voltage drop of the drive signal resulted by the transmission line internal resistance and thus improves the display effect. Meanwhile, there also provide a display drive signal compensating device for carrying out the abovementioned method, and correspondingly, a display comprising such device.

Abstract: The present invention discloses a multi-gate thin film transistor for realizing a multi-gate occupying a small area, pixels provided with the multi-gate TFTs are high in aperture ratio, and a display device provided with the multi-gate TFTs is high in resolution. The multi-gate thin film transistor comprises: at least three gate electrodes; a plurality of active layers corresponding to each of the gate electrodes, respectively, the active layers being formed into an integrated structure; a source electrode connected with one of the plurality of active layers; and a plurality of drain electrodes connected with each of the remainder of the plurality of active layers, respectively. The present invention further discloses an array substrate comprising the multi-gate thin film transistor, and a display device.

Abstract: The present invention provides a pixel circuit, a display substrate and a display device. The pixel circuit comprises a control section, a light emitting diode, a high-level input terminal, a low-level input terminal and a reference terminal, in which the control section comprises a driving thin film transistor, at least one capacitors and a plurality of switching thin film transistors. The reference terminal is connected with the low-level input terminal so as to discharge a capacitor which is connected with a gate of the driving thin film transistor in a pixel resetting stage of the pixel circuit.

Abstract: This present invention discloses a method for preparing graphene, a thin-film transistor, an array substrate, and a display panel. Above all, an amorphous carbon thin film and a catalyst metal thin film are formed on a base substrate in this order. Then, the catalyst metal thin film and the amorphous carbon thin film are allowed to form a eutectic at a high temperature caused by an excimer laser in a manner of excimer laser irradiation. When the irradiation is finished, the surface temperature of the catalyst metal thin film is drastically decreased, allowing most of carbon atoms of the amorphous carbon thin film to be locked in the catalyst metal thin film and only a small amount of carbon atoms to be precipitated on the lower surface of the catalyst metal thin film, so that a graphene thin film is formed.

Abstract: A polysilicon thin film and a manufacturing method thereof, an array substrate and a display device are disclosed. The manufacturing method of the polysilicon thin film comprises the following steps: forming a graphene layer and an amorphous silicon layer which are adjacent; forming polysilicon by way of crystallizing amorphous silicon so as to obtain the polysilicon thin film. The polysilicon thin film manufactured by the method possesses good characteristics.

Abstract: A thin film transistor and a method for manufacturing the same, an array substrate including the thin film transistor, and an electronic apparatus including the thin film transistor or provided with the array substrate. The thin film transistor includes: a gate electrode, a gate insulating layer, an active layer, and a source electrode and a drain electrode, the active layer is formed of a mixture including a semiconductor nano-material and a photoresist material. The method for manufacturing the thin film transistor includes: preparing a mixture including a semiconductor nano-material and a photoresist material; applying the mixture over a substrate, and forming a patterned active layer by exposure and development.

Abstract: Embodiments of the present invention provide an array substrate, a manufacturing method thereof and a display device. The manufacturing method of an array substrate, comprising: forming a gate electrode on a base substrate by a first patterning process, and then depositing a gate insulating layer on the base substrate on which the gate electrode is formed; forming source and drain electrodes on the base substrate obtained after the above step, by a second patterning process; forming an active layer formed of a graphene layer, and a protective layer disposed on the active layer, on the base substrate obtained after the above steps, by a third patterning process; and forming a planarizing layer on the base substrate, obtained after the above steps, by a fourth patterning process, in which the planarizing layer is provided with a through hole through which the source or drain electrode is exposed.

Abstract: The present disclosure relates to the art of display manufacture. There are provided a pixel circuit, a driving method for the same and a display device.

Abstract: Embodiments of the present invention provide an array substrate, a manufacturing method thereof and a display device. The manufacturing method of an array substrate, comprising: forming a gate electrode on a base substrate by a first patterning process, and then depositing a gate insulating layer on the base substrate on which the gate electrode is formed; forming source and drain electrodes on the base substrate obtained after the above step, by a second patterning process; forming an active layer formed of a graphene layer, and a protective layer disposed on the active layer, on the base substrate obtained after the above steps, by a third patterning process; and forming a planarizing layer on the base substrate, obtained after the above steps, by a fourth patterning process, in which the planarizing layer is provided with a through hole through which the source or drain electrode is exposed.

Abstract: A polysilicon thin film and a manufacturing method thereof, an array substrate and a display device are disclosed. The manufacturing method of the polysilicon thin film comprises the following steps: forming a graphene layer and an amorphous silicon layer which are adjacent; forming polysilicon by way of crystallizing amorphous silicon so as to obtain the polysilicon thin film. The polysilicon thin film manufactured by the method possesses good characteristics.